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    • 4. 发明申请
    • CR oscillation circuit
    • CR振荡电路
    • US20060109060A1
    • 2006-05-25
    • US11270597
    • 2005-11-10
    • Kazuyoshi NishiJunji Takiguchi
    • Kazuyoshi NishiJunji Takiguchi
    • H03B5/20
    • H03K3/03
    • A CR oscillation circuit comprises first and second logic elements, a capacitive element, and a resistive element. The first logic element is connected between a first node and a second node. The second logic element is connected between the second node and a third node. The capacitive element is connected between the first node and the second node. The resistive element is connected between the first node and the third node. The capacitive element includes a well, a diffusion layer, a gate electrode and a gate oxide film. The capacitive element has a voltage-dependence characteristic such that its capacitance value varies according to the variation in a supply voltage. The capacitance value of the capacitive element decreases when the on-resistance of the first and second logic elements increases according to the variation in the supply voltage.
    • CR振荡电路包括第一和第二逻辑元件,电容元件和电阻元件。 第一逻辑元件连接在第一节点和第二节点之间。 第二逻辑元件连接在第二节点和第三节点之间。 电容元件连接在第一节点和第二节点之间。 电阻元件连接在第一节点和第三节点之间。 电容元件包括阱,扩散层,栅电极和栅极氧化膜。 电容元件具有电压依赖特性,使得其电容值根据电源电压的变化而变化。 当第一和第二逻辑元件的导通电阻根据电源电压的变化而增加时,电容元件的电容值减小。
    • 9. 发明授权
    • CR oscillation circuit
    • CR振荡电路
    • US07271670B2
    • 2007-09-18
    • US11270597
    • 2005-11-10
    • Kazuyoshi NishiJunji Takiguchi
    • Kazuyoshi NishiJunji Takiguchi
    • H03K3/02H03K3/26H03B7/00
    • H03K3/03
    • A CR oscillation circuit comprises first and second logic elements, a capacitive element, and a resistive element. The first logic element is connected between a first node and a second node. The second logic element is connected between the second node and a third node. The capacitive element is connected between the first node and the second node. The resistive element is connected between the first node and the third node. The capacitive element includes a well, a diffusion layer, a gate electrode and a gate oxide film. The capacitive element has a voltage-dependence characteristic such that its capacitance value varies according to the variation in a supply voltage. The capacitance value of the capacitive element decreases when the on-resistance of the first and second logic elements increases according to the variation in the supply voltage.
    • CR振荡电路包括第一和第二逻辑元件,电容元件和电阻元件。 第一逻辑元件连接在第一节点和第二节点之间。 第二逻辑元件连接在第二节点和第三节点之间。 电容元件连接在第一节点和第二节点之间。 电阻元件连接在第一节点和第三节点之间。 电容元件包括阱,扩散层,栅电极和栅极氧化膜。 电容元件具有电压依赖特性,使得其电容值根据电源电压的变化而变化。 当第一和第二逻辑元件的导通电阻根据电源电压的变化而增加时,电容元件的电容值减小。