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1. 发明授权

US08679951B2 Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure 有权
标题翻译：石墨烯层状结构体及其制备方法以及包含石墨烯层状结构的透明电极和晶体管
公开(公告)号：US08679951B2
公开(公告)日：2014-03-25
申请号：US13530656
申请日：2012-06-22
申请人： Hyeon-jin Shin , Jae-young Choi , Joung-real Ahn , Jung-tak Seo
发明人： Hyeon-jin Shin , Jae-young Choi , Joung-real Ahn , Jung-tak Seo
IPC分类号： H01L21/265
CPC分类号： B32B9/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02378 , H01L21/02488 , H01L21/02527 , H01L21/02656 , H01L29/1606 , H01L29/1608 , H01L29/778 , H01L31/022466 , H01L31/1884 , H01M4/96 , H01M8/0234 , H01M8/086 , H01M8/1007 , H01M8/1011 , H01M8/103 , H01M8/1041 , Y02E10/50 , Y02E60/523 , Y02P70/56
摘要： A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
摘要翻译：一种直接生长石墨烯层状结构的石墨烯的方法，该方法包括在碳化硅（SiC）薄膜的表面上离子注入氮离子和氧离子的至少一个离子以形成离子注入层 SiC薄膜; 以及利用其中形成的离子注入层对SiC薄膜进行热处理以对存在于离子注入层上的SiC表面层进行石墨化。

2. 发明申请

US20090108317A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090108317A1
公开(公告)日：2009-04-30
申请号：US11966399
申请日：2007-12-28
申请人： Jung Tak SEO
发明人： Jung Tak SEO
IPC分类号： H01L27/108 , H01L21/8242
CPC分类号： H01L27/10817 , H01L27/10855
摘要： A method of fabricating a semiconductor device includes forming a first interlayer insulating film including a storage node contact plug over a semiconductor substrate. A second interlayer insulating film is formed over the first interlayer insulating film and the storage node contact plug. A mask pattern is formed over the second interlayer insulating film to expose a storage node region. The second interlayer insulating film and the first interlayer insulating film is selectively etched to form a recess exposing a portion of the storage node contact plug. A lower storage node is formed in the recess. The storage node includes a concave structure that surrounds the exposed storage node contact plug. A dip-out process is performed to remove the second interlayer insulating film. A dielectric film is formed over the semiconductor substrate including the lower storage node. A plate electrode is deposited over the dielectric film to form a capacitor.
摘要翻译：制造半导体器件的方法包括在半导体衬底上形成包括存储节点接触插塞的第一层间绝缘膜。在第一层间绝缘膜和存储节点接触插塞上形成第二层间绝缘膜。在第二层间绝缘膜上形成掩模图案以露出存储节点区域。选择性地蚀刻第二层间绝缘膜和第一层间绝缘膜以形成暴露存储节点接触插塞的一部分的凹部。下部存储节点形成在凹部中。存储节点包括围绕暴露的存储节点接触插头的凹形结构。执行汲取处理以去除第二层间绝缘膜。在包括下存储节点的半导体衬底上形成电介质膜。在电介质膜上沉积平板电极以形成电容器。

3. 发明申请

US20120326128A1 GRAPHENE-LAYERED STRUCTURE, METHOD OF PREPARING THE SAME, AND TRANSPARENT ELECTRODE AND TRANSISTOR INCLUDING GRAPHENE-LAYERED STRUCTURE 有权
标题翻译：石墨层结构，其制备方法和透明电极和包括石墨层结构的晶体
公开(公告)号：US20120326128A1
公开(公告)日：2012-12-27
申请号：US13530656
申请日：2012-06-22
申请人： Hyeon-jin SHIN , Jae-young CHOI , Joung-real AHN , Jung-tak SEO
发明人： Hyeon-jin SHIN , Jae-young CHOI , Joung-real AHN , Jung-tak SEO
IPC分类号： H01L21/20 , B32B9/04 , H01L29/16 , B82Y30/00
CPC分类号： B32B9/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02378 , H01L21/02488 , H01L21/02527 , H01L21/02656 , H01L29/1606 , H01L29/1608 , H01L29/778 , H01L31/022466 , H01L31/1884 , H01M4/96 , H01M8/0234 , H01M8/086 , H01M8/1007 , H01M8/1011 , H01M8/103 , H01M8/1041 , Y02E10/50 , Y02E60/523 , Y02P70/56
摘要： A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
摘要翻译：一种直接生长石墨烯层状结构的石墨烯的方法，该方法包括在碳化硅（SiC）薄膜的表面上离子注入氮离子和氧离子的至少一个离子以形成离子注入层 SiC薄膜; 以及利用其中形成的离子注入层对SiC薄膜进行热处理以对存在于离子注入层上的SiC表面层进行石墨化。

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