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1. 发明授权

US07468298B2 Method of manufacturing flash memory device 失效
标题翻译：制造闪存设备的方法
公开(公告)号：US07468298B2
公开(公告)日：2008-12-23
申请号：US11489392
申请日：2006-07-19
申请人： Jung Woong Lee
发明人： Jung Woong Lee
IPC分类号： H01L21/338
CPC分类号： H01L29/42324 , H01L21/76232 , H01L27/115 , H01L27/11521
摘要： A method of manufacturing a flash memory device, wherein, when a first polysilicon layer is formed, a doped polysilicon layer and an amorphous polysilicon layer are formed so that they are laminated. A process of forming a sidewall oxide film and an oxide film and a thermal treatment process are performed to form the profile of the first polysilicon layer negatively. It is therefore possible to prevent the remnants of the first polysilicon layer below the isolation film. Accordingly, a failure in which the floating gates adjacent in the direction of the isolation film are connected by the remnants of the first polysilicon layer can be prevented.
摘要翻译：一种制造闪速存储器件的方法，其中当形成第一多晶硅层时，形成掺杂多晶硅层和非晶多晶硅层，使得它们被层压。进行形成侧壁氧化膜和氧化膜的工艺以及热处理工艺，以形成第一多晶硅层的轮廓。因此，可以防止隔离膜下面的第一多晶硅层的残留物。因此，可以防止在隔离膜的方向上相邻的浮置栅极与第一多晶硅层的残留物相连接的故障。

2. 发明授权

US08237284B2 Contact plug of semiconductor device and method of forming the same 有权
标题翻译：半导体器件的接触插塞及其形成方法
公开(公告)号：US08237284B2
公开(公告)日：2012-08-07
申请号：US12163735
申请日：2008-06-27
申请人： Jung Woong Lee
发明人： Jung Woong Lee
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L21/76804 , H01L21/76831 , H01L21/76847 , H01L21/76877 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a contact plug of a semiconductor device and a method of forming the same. The method includes forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a first conductive layer over the insulating layer including the contact holes, etching the first conductive layer so that the first conductive layer remains at lower portions of the contact holes, wherein the insulating layer is also etched in order to widen upper widths of the contact holes, and forming a second conductive layer over the first conductive layer of the contact holes, thus forming the contact plugs.
摘要翻译：本发明涉及半导体器件的接触插塞及其形成方法。该方法包括在半导体衬底上形成绝缘层，在绝缘层中形成接触孔，在包括接触孔的绝缘层上形成第一导电层，蚀刻第一导电层，使得第一导电层保留在接触孔，其中绝缘层也被蚀刻以加宽接触孔的上部宽度，并且在接触孔的第一导电层上形成第二导电层，从而形成接触插塞。

3. 发明授权

US06987046B2 Method for manufacturing flash memory device 失效
标题翻译：闪存器件制造方法
公开(公告)号：US06987046B2
公开(公告)日：2006-01-17
申请号：US10882451
申请日：2004-06-30
申请人： In Kwon Yang , Byoung Ki Lee , Jung Woong Lee
发明人： In Kwon Yang , Byoung Ki Lee , Jung Woong Lee
IPC分类号： H01L21/8238 , H01L21/336 , H01L21/8234
CPC分类号： H01L27/11521 , H01L21/32139 , H01L27/115
摘要： The present invention discloses a method for manufacturing a flash memory device including the steps of: sequentially forming a first polysilicon film for a floating gate electrode, a first oxide film, a polysilicon film for a hard mask and a second oxide film on a semiconductor substrate; etching and patterning the second oxide film and the polysilicon film for the hard mask, by forming photoresist patterns on a predetermined region of the second oxide film, and removing the photoresist patterns; forming spacers on the sidewalls of the polysilicon film for the hard mask, by forming and etching a polysilicon film for forming spacers on the whole surface of the resulting structure; removing the exposed first oxide film and a predetermined thickness of second oxide film formed on the patterned polysilicon film for the hard mask; forming floating gate electrode patterns by performing first and second etching processes by using the patterned polysilicon film for the hard mask and the spacers as an etch mask; performing a cleaning process on the whole surface of the resulting structure, and removing the residual second oxide film at the same time; and forming control gate electrode patterns, by sequentially forming and patterning an ONO film, a second polysilicon film for a control gate electrode, a metal silicide film and a hard mask on the resulting structure on which the floating gate electrode patterns have been formed.
摘要翻译：本发明公开了一种闪速存储器件的制造方法，包括以下步骤：顺序地形成用于浮置栅极的第一多晶硅膜，第一氧化膜，用于硬掩模的多晶硅膜和半导体衬底上的第二氧化物膜 ; 通过在第二氧化膜的预定区域上形成光致抗蚀剂图案，去除光致抗蚀剂图案，蚀刻和图案化第二氧化物膜和用于硬掩模的多晶硅膜; 在用于硬掩模的多晶硅膜的侧壁上形成间隔物，通过在所得结构的整个表面上形成和蚀刻用于形成间隔物的多晶硅膜; 去除暴露的第一氧化物膜和形成在用于硬掩模的图案化多晶硅膜上的预定厚度的第二氧化膜; 通过使用用于硬掩模的图案化多晶硅膜和间隔物作为蚀刻掩模，通过执行第一和第二蚀刻工艺来形成浮栅电极图案; 在所得结构的整个表面上进行清洁处理，同时去除残留的第二氧化膜; 以及通过在其上形成有浮栅电极图案的所得结构上顺序地形成和图案化ONO膜，用于控制栅电极的第二多晶硅膜，金属硅化物膜和硬掩模来形成控制栅电极图案。

4. 发明申请

US20200237040A1 GHILLIE SUIT MANUFACTURING APPARATUS, GHILLIE SUIT MANUFACTURING METHOD, AND GHILLIE SUIT MANUFACTURED BY USING SAME 审中-公开
公开(公告)号：US20200237040A1
公开(公告)日：2020-07-30
申请号：US16638750
申请日：2018-08-14
申请人： Jung Woong LEE
发明人： Jung Woong LEE
IPC分类号： A41H42/00 , A41D31/04 , A41D3/00 , F41H3/02
摘要： A ghillie suit manufacturing apparatus includes: a camouflage yarn feeding unit adapted to continuously feed camouflage yarns having different colors required for camouflage by a given distance from the left side to the right side and from the right side to the left side; a knotting unit adapted to tie the camouflage yarns fed from the camouflage yarn feeding unit on both side end portions of the camouflage yarns to form knots on both left and right sides of the camouflage yarns, while having given distances between the knots; and a cutting unit adapted to cut given portions of the camouflage yarns located between the knots formed on both left and right sides of the camouflage yarns by means of the knotting unit.

5. 发明申请

US20100110971A1 METHOD AND APPARATUS FOR PROCESSING CONTROL MESSAGE WHICH REQUESTS RETRANSMITTING DATA 审中-公开
标题翻译：用于处理要求重新调整数据的控制消息的方法和装置
公开(公告)号：US20100110971A1
公开(公告)日：2010-05-06
申请号：US12611592
申请日：2009-11-03
申请人： Soeng Hun KIM , Jung Woong LEE
发明人： Soeng Hun KIM , Jung Woong LEE
IPC分类号： H04J1/10
CPC分类号： H04L1/1614 , H04L1/1635 , H04L1/1642 , H04W28/065
摘要： A method and an apparatus for processing a control message for a request of retransmission are provided. The method includes generating a First Missing Serial number (FMS) describing a serial number of a data unit having a lowest serial number among data units which are not received, determining whether a data unit having a serial number greater than the serial number described in the FMS exists due to an out of sequence among data units which are previously received, generating a bitmap indicating a reception of a plurality of data units having a serial number greater than the FMS, if a data unit which is out of sequence exists, and connecting and transmitting the FMS and the bitmap.
摘要翻译：提供了一种用于处理用于重发请求的控制消息的方法和装置。该方法包括生成描述在未被接收的数据单元中具有最低序列号的数据单元的序列号的第一缺失序列号（FMS），确定序列号是否大于在由于先前接收到的数据单元之间的序列不正确，存在FMS，产生指示序列号大于FMS的多个数据单元的接收的位图，如果不存在序列号的数据单元，并且连接并发送FMS和位图。

6. 发明授权

US10230496B2 Method and apparatus for processing control message which requests retransmitting data 有权
公开(公告)号：US10230496B2
公开(公告)日：2019-03-12
申请号：US12611592
申请日：2009-11-03
申请人： Soeng Hun Kim , Jung Woong Lee
发明人： Soeng Hun Kim , Jung Woong Lee
IPC分类号： H04L1/16 , H04W28/06
摘要： A method and an apparatus for processing a control message for a request of retransmission are provided. The method includes generating a First Missing Serial number (FMS) describing a serial number of a data unit having a lowest serial number among data units which are not received, determining whether a data unit having a serial number greater than the serial number described in the FMS exists due to an out of sequence among data units which are previously received, generating a bitmap indicating a reception of a plurality of data units having a serial number greater than the FMS, if a data unit which is out of sequence exists, and connecting and transmitting the FMS and the bitmap.

7. 发明申请

US20130175257A1 PLANE HEATING ELEMENT USING CERAMIC GLASS 审中-公开
标题翻译：使用陶瓷玻璃的平面加热元件
公开(公告)号：US20130175257A1
公开(公告)日：2013-07-11
申请号：US13823295
申请日：2011-09-08
申请人： Won-Bae Lee , Ki-Bum Park , Seong-Yong Park , Jung-Woong Lee , Sang-Gil Do , In-Bum Jeong
发明人： Won-Bae Lee , Ki-Bum Park , Seong-Yong Park , Jung-Woong Lee , Sang-Gil Do , In-Bum Jeong
IPC分类号： H05B3/00
CPC分类号： H05B3/0004 , H05B3/265 , H05B2203/002 , H05B2203/013
摘要： The present invention relates to a plane heating element which is supplied with power to generate heat. The plane heating element may include a support layer made of ceramic glass, a heat-generating layer which is formed by printing heat-generating paste on the upper surface of the support layer, and an insulating layer which is formed by applying insulating paste on the upper surface of the heat-generating layer. The heat generating paste may be dried and plasticized, and receives predetermined power to generate heat. The insulating paste may be dried and plasticized and may be configured to insulate the and prevent oxidation of the heat-generating layer. The present invention provides a strong adhesion with respect to a glass substrate and makes it possible to increase temperature up to a target level in a short time, and thus can be used as an effective printing method in various electric and electronic product fields.
摘要翻译：本发明涉及一种被供电以产生热量的平面加热元件。平面加热元件可以包括由陶瓷玻璃制成的支撑层，通过在支撑层的上表面上印刷发热膏形成的发热层和通过在绝缘层上施加绝缘膏形成的绝缘层发热层的上表面。发热膏可以被干燥和塑化，并且接收预定的功率以产生热量。绝缘膏可以被干燥和塑化，并且可以被配置为绝热并防止发热层的氧化。本发明提供了对玻璃基板的强粘合性，并且能够在短时间内将温度升高到目标水平，因此可以用作各种电气和电子产品领域中的有效印刷方法。

8. 发明申请

US20090127714A1 CONTACT PLUG OF SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 有权
标题翻译：半导体器件的接触插件及其形成方法
公开(公告)号：US20090127714A1
公开(公告)日：2009-05-21
申请号：US12163735
申请日：2008-06-27
申请人： Jung Woong LEE
发明人： Jung Woong LEE
IPC分类号： H01L21/44 , H01L23/48
CPC分类号： H01L21/76804 , H01L21/76831 , H01L21/76847 , H01L21/76877 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a contact plug of a semiconductor device and a method of forming the same. The method includes forming an insulating layer over a semiconductor substrate, forming contact holes in the insulating layer, forming a first conductive layer over the insulating layer including the contact holes, etching the first conductive layer so that the first conductive layer remains at lower portions of the contact holes, wherein the insulating layer is also etched in order to widen upper widths of the contact holes, and forming a second conductive layer over the first conductive layer of the contact holes, thus forming the contact plugs.
摘要翻译：本发明涉及半导体器件的接触插塞及其形成方法。该方法包括在半导体衬底上形成绝缘层，在绝缘层中形成接触孔，在包括接触孔的绝缘层上形成第一导电层，蚀刻第一导电层，使得第一导电层保留在接触孔，其中绝缘层也被蚀刻以加宽接触孔的上部宽度，并且在接触孔的第一导电层上形成第二导电层，从而形成接触插塞。

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