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1. 发明申请

US20140288215A1 HYDROLYSIS RESISTANT AND BIODEGRADABLE ALIPHATIC-AROMATIC COPOLYESTER RESIN COMPOSITION 审中-公开
标题翻译：抗水解和生物可降解的脂肪族芳族聚酯树脂组合物
公开(公告)号：US20140288215A1
公开(公告)日：2014-09-25
申请号：US14238214
申请日：2011-11-28
申请人： Ki Cheol Kim , Jung Hyun Choi
发明人： Ki Cheol Kim , Jung Hyun Choi
IPC分类号： C08G63/54 , C08K3/34 , C08L3/02 , C08K3/26 , C08G63/60 , C08L67/02
CPC分类号： C08G63/54 , C08G63/60 , C08K3/26 , C08K3/34 , C08K3/346 , C08K2003/265 , C08L3/02 , C08L67/02 , C08L67/06
摘要： The present invention relates to an aliphatic-aromatic copolyester resin composition with excellent hydrolysis resistance, wherein an unsaturated compound or an anhydride thereof is introduced into a molecular structure, and specifically, the aliphatic-aromatic copolyester resin composition can be manufactured into all molded products by extrusion, injection and the like, by solving problems with respect to physical properties, processability, reaction rates and water solubility of conventional biological resins.
摘要翻译：本发明涉及具有优异的耐水解性的脂肪族 - 芳香族共聚酯树脂组合物，其中不饱和化合物或其酸酐被引入到分子结构中，具体而言，脂族 - 芳族共聚酯树脂组合物可以通过通过解决常规生物树脂的物理性质，加工性，反应速率和水溶性的问题，可以解决挤出，注射等问题。

2. 外观设计

USD601992S1 Portable phone 有权
公开(公告)号：USD601992S1
公开(公告)日：2009-10-13
申请号：US29328053
申请日：2008-11-18
申请人： Jung-Hyun Choi , Seung-Min Park , Seog-Guen Kim
设计人： Jung-Hyun Choi , Seung-Min Park , Seog-Guen Kim

3. 外观设计

USD593529S1 Cellular phone 有权
公开(公告)号：USD593529S1
公开(公告)日：2009-06-02
申请号：US29322441
申请日：2008-08-05
申请人： Jung-Hyun Choi , Sang-Min Hyun , Chang-Hwan Hwang
设计人： Jung-Hyun Choi , Sang-Min Hyun , Chang-Hwan Hwang

4. 外观设计

USD562309S1 Headset 有权
公开(公告)号：USD562309S1
公开(公告)日：2008-02-19
申请号：US29268228
申请日：2006-11-02
申请人： Jung-Hyun Choi , Sang-Min Hyun , Chang-Soo Lee
设计人： Jung-Hyun Choi , Sang-Min Hyun , Chang-Soo Lee

5. 外观设计

USD560191S1 Cellular phone 有权
公开(公告)号：USD560191S1
公开(公告)日：2008-01-22
申请号：US29269111
申请日：2006-11-21
申请人： Jung-Hyun Choi , Sang-Min Hyun , Chang-Soo Lee
设计人： Jung-Hyun Choi , Sang-Min Hyun , Chang-Soo Lee

6. 发明授权

US10344120B2 Hydrolysis resistant and biodegradable aliphatic-aromatic copolyester resin composition 有权
公开(公告)号：US10344120B2
公开(公告)日：2019-07-09
申请号：US14238214
申请日：2011-11-28
申请人： Ki Cheol Kim , Jung Hyun Choi
发明人： Ki Cheol Kim , Jung Hyun Choi
IPC分类号： C08G63/54 , C08G63/60 , C08K3/26 , C08K3/34 , C08L3/02 , C08L67/02
摘要： The present invention relates to an aliphatic-aromatic copolyester resin composition with excellent hydrolysis resistance, wherein an unsaturated compound or an anhydride thereof is introduced into a molecular structure, and specifically, the aliphatic-aromatic copolyester resin composition can be manufactured into all molded products by extrusion, injection and the like, by solving problems with respect to physical properties, processability, reaction rates and water solubility of conventional biological resins.

7. 发明授权

US08558608B2 Poly silicon resistor, reference voltage circuit comprising the same, and manufacturing method of poly silicon resistor 有权
标题翻译：聚硅电阻器，包括其的参考电压电路以及多晶硅电阻器的制造方法
公开(公告)号：US08558608B2
公开(公告)日：2013-10-15
申请号：US13559218
申请日：2012-07-26
申请人： Jung-Hyun Choi
发明人： Jung-Hyun Choi
IPC分类号： H01L25/00
CPC分类号： H01L28/20 , H01C7/005 , H01C13/02 , H01C17/06
摘要： The present invention relates to a polysilicon resistor, a reference voltage circuit including the same, and a method for manufacturing the polysilicon resistor. The polysilicon resistor according includes a first polysilicon resistor and at least one of second polysilicon resistors, coupled to the first polysilicon resistor in series. The first polysilicon resistor and the at least one of the second polysilicon resistors are P-type polysilicon, and a doping concentration of the first polysilicon resistor is different from a doping concentration of the at least one of the second polysilicon resistors. The polysilicon resistor formed by serially coupling the first polysilicon resistor and the at least one of the second polysilicon resistors is applied with a constant current such that a reference voltage or a constant voltage is generated.
摘要翻译：多晶硅电阻器及其制造方法技术领域本发明涉及一种多晶硅电阻器及其制造方法。多晶硅电阻器包括第一多晶硅电阻器和串联连接到第一多晶硅电阻器的第二多晶硅电阻器中的至少一个。第一多晶硅电阻器和第二多晶硅电阻器中的至少一个是P型多晶硅，并且第一多晶硅电阻器的掺杂浓度不同于第二多晶硅电阻器中的至少一个的掺杂浓度。通过串联耦合第一多晶硅电阻器和至少一个第二多晶硅电阻器形成的多晶硅电阻器被施加恒定电流，使得产生参考电压或恒定电压。

8. 外观设计

USD657334S1 Mobile phone 有权
公开(公告)号：USD657334S1
公开(公告)日：2012-04-10
申请号：US29390815
申请日：2011-04-29
申请人： Jung-Hyun Choi
设计人： Jung-Hyun Choi

9. 发明申请

US20110114474A1 METHOD AND APPARATUS FOR DEPOSITION OF DIFFUSION THIN FILM 审中-公开
标题翻译：用于沉积薄膜沉积的方法和装置
公开(公告)号：US20110114474A1
公开(公告)日：2011-05-19
申请号：US12743706
申请日：2007-11-22
申请人： Sang-Youl Bae , Si-Young Choi , Sung-Youp Chung , Jung-Hyun Choi
发明人： Sang-Youl Bae , Si-Young Choi , Sung-Youp Chung , Jung-Hyun Choi
IPC分类号： C23C14/34 , C23C14/22 , C23C14/14 , C23C14/54
CPC分类号： C23C14/0641 , C23C14/325 , C23C14/345 , H01J37/34
摘要： This invention relates to a method and apparatus for deposition of a diffused thin film, useful in the fabrication of semiconductors and for the surface DC-Bias coating of various tools. In order to coat the surface of a treatment object, such as semiconductors, various molded products, or various tools, with a thin film, one or more process factors selected from among a bias voltage, a gas quantity, an arc power, and a sputtering power are continuously and variably adjusted, whereby the composition ratio of the thin film which is formed on the surface of the treatment object not through a chemical reaction but through a physical method is continuously varied, thus manufacturing a thin film having high hardness. The composition ratio of the thin film to be deposited is selected depending on the end use thereof, thereby depositing the thin film having superior wear resistance, impact resistance, and heat resistance.
摘要翻译：本发明涉及一种沉积扩散薄膜的方法和装置，可用于制造半导体和各种工具的表面直流偏置涂层。为了涂覆诸如半导体，各种模制产品或具有薄膜的各种工具的处理对象的表面，从偏置电压，气体量，电弧功率和溅射功率被连续且可变地调节，由此，不是通过化学反应而是通过物理方法形成在处理对象表面上的薄膜的组成比不断变化，因此制造具有高硬度的薄膜。要沉积的薄膜的组成比根据其最终用途来选择，从而沉积具有优异的耐磨性，耐冲击性和耐热性的薄膜。

10. 外观设计

USD579439S1 Portable phone 有权
公开(公告)号：USD579439S1
公开(公告)日：2008-10-28
申请号：US29294206
申请日：2007-12-28
申请人： Jin-Man Chung , Jung-Hyun Choi , Seung-Min Park , Chang-Hwan Hwang
设计人： Jin-Man Chung , Jung-Hyun Choi , Seung-Min Park , Chang-Hwan Hwang

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