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    • 7. 发明授权
    • Nonvolatile semiconductor memory device and writing method of the same
    • 非易失性半导体存储器件及其写入方法相同
    • US07848147B2
    • 2010-12-07
    • US12062352
    • 2008-04-03
    • Jun Young Park
    • Jun Young Park
    • G11C16/04
    • G11C16/10G11C2207/2245
    • A nonvolatile semiconductor memory device and a writing method thereof are provided. The nonvolatile semiconductor memory device includes a cell array, a controller configured to receive input data from an outside source, an address latch unit configured to store a Y-address of the input data and X-addresses respectively corresponding to at least two wordlines, over which the input data is written, based on an address of the input data output from the controller, and a page buffer configured to receive the input data from the controller and temporarily store the input data. The controller writes the data stored in the page buffer over the two wordlines in the cell array based on the at least two X-addresses and the Y-address.
    • 提供了一种非易失性半导体存储器件及其写入方法。 非易失性半导体存储器件包括单元阵列,被配置为从外部源接收输入数据的控制器,地址锁存单元,被配置为存储分别对应于至少两个字线的输入数据的Y地址和X地址, 基于从控制器输出的输入数据的地址来写入输入数据;以及页缓冲器,被配置为从控制器接收输入数据并临时存储输入数据。 控制器基于至少两个X地址和Y地址将存储在页面缓冲器中的数据写入单元阵列中的两个字线。