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1. 发明授权

US07571424B2 Diffused aerial image model semiconductor device fabrication 失效
标题翻译：扩散空间图像模型半导体器件制造
公开(公告)号：US07571424B2
公开(公告)日：2009-08-04
申请号：US11592142
申请日：2006-11-03
申请人： Chang Moon Lim , Jun Taek Park
发明人： Chang Moon Lim , Jun Taek Park
IPC分类号： G06F17/50
CPC分类号： G03F7/705
摘要： A lithography method has a simulation method for mathematically approximating a photoresist film pattern with a Diffused Aerial Image Model (“DAIM”) for semiconductor device fabrication. The DAIM is applied with at least two acids having heterogeneous diffusion characteristics.
摘要翻译：光刻方法具有用于半导体器件制造的扩散空中图像模型（“DAIM”）对光致抗蚀剂膜图案进行数学近似的模拟方法。 DAIM应用于具有不均匀扩散特性的至少两种酸。

2. 发明授权

US08841219B2 Lithography processes utilizing extreme ultraviolet rays and methods of manufacturing semiconductor devices using the same 有权
标题翻译：使用极紫外线的平版印刷方法和使用其制造半导体器件的方法
公开(公告)号：US08841219B2
公开(公告)日：2014-09-23
申请号：US13617998
申请日：2012-09-14
申请人： Jun Taek Park , Chang Moon Lim , Seok Kyun Kim
发明人： Jun Taek Park , Chang Moon Lim , Seok Kyun Kim
IPC分类号： H01L21/311
CPC分类号： H01L21/0274 , G03F7/70066 , G03F7/70433
摘要： Lithography processes are provided. The lithography process includes installing a reticle masking (REMA) part having a REMA open region in a lithography apparatus, loading a reticle including at least one reticle chip region in which circuit patterns are disposed into the lithography apparatus, and sequentially exposing a first wafer field, which includes a first chip region corresponding to the reticle chip region, and a second wafer field, which includes a second chip region corresponding to the reticle chip region, of a wafer to rays using the reticle and the REMA part to transfer images of the circuit patterns onto the wafer. An edge boundary of the REMA open region transferred on the first wafer field is located on a scribe lane region between the first and second chip regions while the first wafer field is exposed. Methods of manufacturing a semiconductor device using the lithography process are also provided.
摘要翻译：提供光刻工艺。光刻工艺包括在光刻设备中安装具有REMA开放区域的掩模版掩模（REMA）部件，将包括至少一个掩模版芯片区域的掩模版加载到光刻设备中，并顺序曝光第一晶片磁场，其包括对应于标线片芯片区域的第一芯片区域和包括与掩模版芯片区域对应的第二芯片区域的第二晶片磁场，使用所述掩模版和所述REMA部件的晶片对射线来传输电路图案到晶片上。在第一晶片磁场上转印的REMA开放区域的边缘边界位于第一和第二芯片区域之间的划线通道区域，同时暴露第一晶片磁场。还提供了使用光刻工艺制造半导体器件的方法。

3. 发明申请

US20130210234A1 LITHOGRAPHY PROCESSES UTILIZING EXTREME ULTRAVIOLET RAYS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING THE SAME 有权
标题翻译：利用极端超紫外线的光刻工艺和使用该方法制造半导体器件的方法
公开(公告)号：US20130210234A1
公开(公告)日：2013-08-15
申请号：US13617998
申请日：2012-09-14
申请人： Jun Taek PARK , Chang Moon LIM , Seok Kyun KIM
发明人： Jun Taek PARK , Chang Moon LIM , Seok Kyun KIM
IPC分类号： H01L21/268 , G03B27/32
CPC分类号： H01L21/0274 , G03F7/70066 , G03F7/70433
摘要： Lithography processes are provided. The lithography process includes installing a reticle masking (REMA) part having a REMA open region in a lithography apparatus, loading a reticle including at least one reticle chip region in which circuit patterns are disposed into the lithography apparatus, and sequentially exposing a first wafer field, which includes a first chip region corresponding to the reticle chip region, and a second wafer field, which includes a second chip region corresponding to the reticle chip region, of a wafer to rays using the reticle and the REMA part to transfer images of the circuit patterns onto the wafer. An edge boundary of the REMA open region transferred on the first wafer field is located on a scribe lane region between the first and second chip regions while the first wafer field is exposed. Methods of manufacturing a semiconductor device using the lithography process are also provided.
摘要翻译：提供光刻工艺。光刻工艺包括在光刻设备中安装具有REMA开放区域的掩模版掩模（REMA）部件，将包含至少一个掩模版芯片区域的掩模版加载到光刻设备中，并顺序曝光第一晶片磁场，其包括对应于标线片芯片区域的第一芯片区域和包括与掩模版芯片区域对应的第二芯片区域的第二晶片磁场，使用所述掩模版和所述REMA部件的晶片对射线来传输电路图案到晶片上。在第一晶片磁场上转印的REMA开放区域的边缘边界位于第一和第二芯片区域之间的划线通道区域，同时暴露第一晶片磁场。还提供了使用光刻工艺制造半导体器件的方法。

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