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1. 发明授权

US4603263A Josephson pulse generator of current injection type 失效
标题翻译：约瑟夫森电流注入型脉冲发生器
公开(公告)号：US4603263A
公开(公告)日：1986-07-29
申请号：US468908
申请日：1983-02-23
申请人： Shuichi Tahara , Jun'ichi Sone
发明人： Shuichi Tahara , Jun'ichi Sone
IPC分类号： H03K3/38
CPC分类号： H03K3/38 , Y10S505/864
摘要： A Josephson pulse generator of the current injection type is composed of a first group of N (N.gtoreq.2) resistors, one end of each being connected together, the other ends of two of the N resistors being connected to first and second nodes. A second group of serially connected N-1 resistors is connected between the first and second nodes and to the other ends of the N-2 resistors in the first group not connected to the first and second nodes. N Josephson junctions are each connected between a reference potential and the other end of a different one of the N resistors. Two additional Josephson junctions, each having one end thereof connected, respectively, to the first node and the second node is provided along with an additional resistor connected between the other end of the Josephson junction connected to the first node and the reference potential.
摘要翻译：电流注入型约瑟夫森脉冲发生器由第一组N（N> / = 2）电阻组成，其中一端连接在一起，其中两个N电阻的另一端连接到第一和第二节点。第二组串联N-1电阻器连接在第一和第二节点之间，并连接到第一组中不连接到第一和第二节点的N-2电阻器的另一端。 N个约瑟夫逊结各自连接在参考电位和不同N个电阻器的另一端之间。两个附加的约瑟夫逊结，其一端分别连接到第一节点和第二节点以及连接在连接到第一节点的约瑟夫逊结的另一端和参考电位之间的附加电阻器。

2. 发明授权

US5047365A Method for manufacturing a heterostructure transistor having a germanium layer on gallium arsenide using molecular beam epitaxial growth 失效
标题翻译：使用分子束外延生长制造在砷化镓上具有锗层的异质结晶体晶体管的方法
公开(公告)号：US5047365A
公开(公告)日：1991-09-10
申请号：US328672
申请日：1989-03-27
申请人： Masafumi Kawanaka , Jun'ichi Sone , Tooru Kimura
发明人： Masafumi Kawanaka , Jun'ichi Sone , Tooru Kimura
IPC分类号： C30B23/08 , C30B29/42 , H01L21/20 , H01L21/203 , H01L21/331 , H01L29/267 , H01L29/73 , H01L29/737
CPC分类号： H01L29/7371 , H01L21/02395 , H01L21/0245 , H01L21/02463 , H01L21/02532 , H01L21/02631 , H01L29/66318 , Y10S148/007 , Y10S148/041 , Y10S148/072 , Y10S438/916 , Y10S438/933
摘要： A heterostructure bipolar transistor is formed by a process of steps of holding an N-type gallium arsenide body using as an emitter region in a high vacuum of 10.sup.-9 torr to 10.sup.-13 torr at a first temperature of 400.degree. C. to 1,000.degree. C. where arsenic on a surface of the gallium arsenide body drifts away, lowering the first temperature to a second temperature of 300.degree. C. to 400.degree. C. to start a molecular beam epitaxial growth of a germanium, and forming an N-type germanium layer using as a collector region.

3. 发明授权

US4603265A Josephson device 失效
标题翻译：约瑟夫森装置
公开(公告)号：US4603265A
公开(公告)日：1986-07-29
申请号：US589657
申请日：1984-03-14
申请人： Jun'ichi Sone
发明人： Jun'ichi Sone
IPC分类号： G11C11/44 , H03K3/38 , H03K5/1532 , H03K5/1534 , H03K19/195
CPC分类号： H03K19/1952 , H03K3/38 , H03K5/1534 , Y10S505/865
摘要： A Josephson device applicable to a down-edge detecting circuit and to a sense circuit comprises a first gate circuit and a second gate circuit each incorporating Josephson junctions, with an input line of the first gate circuit and a first input line of the second gate circuit serially connected to each other and an output line of the first gate circuit connected to a second input line of the second gate circuit so as to allow the second input line to flow an input current in the direction opposite the current flowing through the first input line. With this device, a down-edge detecting circuit which provides a wide operating margin for the gate current and permits high density circuit integration can be realized. The device can further be used to form a sense-bus circuit.
摘要翻译：适用于下行边缘检测电路和感测电路的约瑟夫逊器件包括第一门电路和第二门电路，每个第一门电路和第二门电路都包含约瑟夫逊结，第一门电路的输入线和第二门电路的第一输入线串联连接，第一门电路的输出线连接到第二门电路的第二输入线，以便允许第二输入线在与流经第一输入线的电流相反的方向上流过输入电流。利用该器件，可以实现为栅极电流提供宽工作裕度并允许高密度电路集成的下降沿检测电路。该装置还可用于形成感测总线电路。

4. 发明授权

US4716445A Heterojunction bipolar transistor having a base region of germanium 失效
标题翻译：具有锗的基极区的异质结双极晶体管
公开(公告)号：US4716445A
公开(公告)日：1987-12-29
申请号：US004931
申请日：1987-01-20
申请人： Jun'ichi Sone
发明人： Jun'ichi Sone
IPC分类号： H01L29/267 , H01L29/45 , H01L29/737 , H01L29/161 , H01L29/20 , H01L29/72
CPC分类号： H01L29/452 , H01L29/267 , H01L29/7378 , Y10S148/011 , Y10S148/056 , Y10S148/058 , Y10S148/067 , Y10S148/072
摘要： The heterojunction bipolar transistor has a structure of wide band-gap transistor and comprises a collector region having an N-type GaAs layer, a base region having a P-type germanium layer formed on the N-type GaAs layer, and an emitter region having an N-type semiconductor layer of mixed crystal of silicon and germanium formed on the P-type germanium layer. The mixed crystal of the N-type semiconductor layer may have a uniform distribution of silicon or a graded distribution of silicon in which a content of silicon is zero at the surface facing the P-type germanium layer and is continuously increased with distance from the surface facing the P-type germanium layer.
摘要翻译：异质结双极晶体管具有宽带隙晶体管的结构，并且包括具有N型GaAs层的集电极区域，在N型GaAs层上形成有P型锗层的基极区域和具有形成在P型锗层上的硅和锗的混晶的N型半导体层。 N型半导体层的混晶可以具有均匀的硅分布或者在面向P型锗层的表面上硅含量为零的硅的分级分布，并且随着与表面的距离而连续增加面向P型锗层。

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