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    • 5. 发明授权
    • Schottky diode with extended forward current capability
    • 具有延长正向电流能力的肖特基二极管
    • US08368167B1
    • 2013-02-05
    • US13251069
    • 2011-09-30
    • Joseph Urienza
    • Joseph Urienza
    • H01L29/66H01L29/47H01L21/28
    • H01L29/872H01L27/0814
    • The embodiments of the present invention disclose a semiconductor device and a method for forming the semiconductor device. Wherein the semiconductor comprises: a first semiconductor layer, having a first conductivity type on a semiconductor substrate, a guard ring region, formed in the surface of the first semiconductor layer, having a second conductivity type; a Schottky diode metal contact, coupled to the first semiconductor layer, wherein the guard ring region is at periphery of the Schottky diode interface, and wherein the Schottky diode metal contact has no direct electrical connection with the guard ring region; and an electrical resistance module, coupled between the Schottky diode metal contact and the guard ring. Due to the ballasting effect from the electrical resistance module, the minority injection or the parasitic transistor action are alleviated. Thus, forward current capability is extended without introducing significant minority injection.
    • 本发明的实施例公开了半导体器件和形成半导体器件的方法。 其中半导体包括:在半导体衬底上具有第一导电类型的第一半导体层,形成在第一半导体层的表面中的具有第二导电类型的保护环区; 耦合到所述第一半导体层的肖特基二极管金属触点,其中所述保护环区域在所述肖特基二极管接口的周围,并且其中所述肖特基二极管金属触点与所述保护环区域没有直接的电连接; 以及耦合在肖特基二极管金属触点和保护环之间的电阻模块。 由于来自电阻模块的镇流效应,减少了少数注入或寄生晶体管的作用。 因此,正向电流能力不断扩大,而不引入显着的少数注入。