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    • 1. 发明授权
    • Chemical vapor deposition process for producing metal carbide or nitride
whiskers
    • 用于生产金属碳化物或氮化物晶须的化学气相沉积工艺
    • US4756791A
    • 1988-07-12
    • US899833
    • 1986-08-25
    • Charles D'AngeloJoseph G. Baldoni, IISergej-Tomislav Buljan
    • Charles D'AngeloJoseph G. Baldoni, IISergej-Tomislav Buljan
    • C30B25/00C01B31/30C01B21/06
    • C30B25/005C30B29/36C30B29/38
    • A chemical vapor deposition process for producing single crystal whiskers of metal carbides, nitrides, or carbonitrides involving flushing a reaction chamber including a suitable substrate surface heated to 1025.degree.-1125.degree. C., and flowing reactant gases past the substrate to form whiskers. The reactants comprise a halide of Ti, Zr, Hf, Nb, Ta or W and one or more of nitrogen, ammonia and suitable aliphatic hydrocarbons. The atomic ratio of carbon and/or nitrogen to metal is about 5:1 to 16:1; the volume ratio of hydrocarbon and/or nitrogen and/or ammonia to hydrogen is about 1:50-1:20. The preferred substrate materials are nickel or a high nickel alloy coated with TiC or TiN, or, for carbide whiskers, nickel impregnated graphite. The reactor walls and internal fixtures preferably provide the substrate surfaces. A more efficient batch process and a continuous process for whisker growth are disclosed.
    • 一种用于生产金属碳化物,氮化物或碳氮化物的单晶晶须的化学气相沉积方法,包括冲洗反应室,其包括加热至1025°-1125℃的合适的基底表面,并使反应物气体流过基底以形成晶须。 反应物包括Ti,Zr,Hf,Nb,Ta或W的卤化物和氮,氨和合适的脂族烃中的一种或多种。 碳和/或氮与金属的原子比为约5:1至16:1; 烃和/或氮和/或氨与氢的体积比为约1:50-1:20。 优选的基底材料是镍或涂覆有TiC或TiN的高镍合金,或对于碳化物晶须,镍浸渍的石墨。 反应器壁和内部固定件优选地提供基板表面。 公开了一种更有效的间歇工艺和晶须生长的连续工艺。