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    • 2. 发明授权
    • DRAM capable of selectively performing self-refresh operation for memory bank
    • DRAM能够选择性地对存储体执行自刷新操作
    • US06381188B1
    • 2002-04-30
    • US09481251
    • 2000-01-11
    • Jong-hyun ChoiDong-il SeoJong-sik Na
    • Jong-hyun ChoiDong-il SeoJong-sik Na
    • G11C700
    • G11C11/4074G11C11/406G11C11/40615G11C11/40622
    • A dynamic random access memory (DRAM) including a plurality of memory banks is capable of selectively performing a self-refresh operation with respect to only a subset of the banks. The DRAM includes a plurality of row decoders for selecting word lines of the memory cells of the memory banks, an address generator for generating internal addresses which sequentially vary during a self-refresh mode, a refresh bank designating circuit for generating refresh bank designating signals for designating a memory bank to be refreshed, and a bank selection decoder for designating one or more memory banks to be refreshed by the refresh bank designating signals and supplying refresh addresses to the row decoders corresponding to the designated memory banks according to the information of the internal addresses. The self-refresh operation is performed for only selected memory banks, or alternatively, only in those memory banks in which data is stored, thereby minimizing power consumption.
    • 包括多个存储体的动态随机存取存储器(DRAM)能够仅针对存储体的子集选择性地进行自刷新操作。 DRAM包括用于选择存储体的存储单元的字线的多个行解码器,用于产生在自刷新模式期间顺序变化的内部地址的地址发生器,用于产生刷新存储区指定信号的刷新存储体指定电路, 指定要刷新的存储体,以及存储体选择解码器,用于指定要由刷新存储体指定信号刷新的一个或多个存储体,并根据内部信息向与指定存储体相对应的行解码器提供刷新地址 地址 仅对所选择的存储体执行自刷新操作,或者仅在存储数据的那些存储体中执行自刷新操作,从而最小化功耗。