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1. 发明申请

US20050199262A1 Method for ashing 审中-公开
标题翻译：灰化方法
公开(公告)号：US20050199262A1
公开(公告)日：2005-09-15
申请号：US10510602
申请日：2002-10-07
申请人： Jong-Po Jeon , Yong-Hoon Song , Jin-Woo Park , Seung-Bok Yang
发明人： Jong-Po Jeon , Yong-Hoon Song , Jin-Woo Park , Seung-Bok Yang
IPC分类号： H01L21/3065 , H01L21/02 , H01L21/306 , H01L21/311 , B08B6/00
CPC分类号： H01L21/02063 , H01L21/02071 , H01L21/31138
摘要： The present invention provides an ashing method using rapid heat transfer under high pressure. The present method, applicable to all photoresist ashing processes, can rapidly remove hardened photoresists without popping at the ashing step by baking high dose ion implanted silicon substrate on a hot plate, enhancing the ashing quantity, by drastically reducing the ashing process time, while allowing conventional equipments to be used further. The present method comprises an in situ baking step, wherein a silicon substrate is baked for a predetermined time period under a pressure of 10 Torr or more while it is placed on a hot plate; a vacuumizing step, wherein a stable vacuum status is achieved while the silicon substrate is placed on the hot plate; a gas processing step, wherein selected reaction gas is introduced into a reaction chamber; and an ashing step, wherein plasma is generated until almost all of the photoresists are removed.
摘要翻译：本发明提供一种在高压下快速传热的灰化方法。适用于所有光刻胶灰化过程的本方法可以快速去除硬化的光致抗蚀剂，而不会在灰化步骤中通过在热板上烘烤高剂量离子注入的硅衬底，从而通过显着降低灰化处理时间来增强灰化量，同时允许常规设备进一步使用。本方法包括原位烘烤步骤，其中将硅衬底放置在热板上在10托或更大的压力下烘烤预定时间段; 一个真空步骤，其中当硅衬底放置在热板上时实现稳定的真空状态; 气体处理步骤，其中选择的反应气体被引入反应室; 和灰化步骤，其中产生等离子体直到几乎所有的光致抗蚀剂被去除。

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