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    • 3. 发明授权
    • Semiconductor device including metal silicide layer and fabrication method thereof
    • 包括金属硅化物层的半导体器件及其制造方法
    • US08558316B2
    • 2013-10-15
    • US13343280
    • 2012-01-04
    • Jong-ki Jung
    • Jong-ki Jung
    • H01L29/76H01L31/062
    • H01L27/088H01L21/28518H01L21/76814H01L21/76843H01L21/823475H01L27/10855H01L27/10873H01L27/10885H01L27/10894H01L27/14603H01L29/41783H01L29/6653H01L29/66636
    • A semiconductor device comprises a substrate, a gate structure formed on the substrate, a channel region below the gate structure in the substrate, a first source/drain region and a second source/drain region located at opposite side of the gate structure, a first lightly-doped drain (LDD) junction region formed between the first source/drain region and one end of the channel region, a second lightly-doped drain (LDD) junction region formed between the second source/drain region and the other end of the channel region, a metal silicide layer having a first metal formed on the first and second source/drain regions, an insulating layer formed on the metal silicide layer and the gate structure having a first opening to expose the metal silicide layer, and a conductive layer having the first metal and filling the first opening to contact the metal silicide layer.
    • 半导体器件包括衬底,形成在衬底上的栅极结构,衬底中栅极结构下方的沟道区,位于栅极结构相对侧的第一源极/漏极区域和第二源极/漏极区域,第一 形成在第一源极/漏极区域和沟道区域的一端之间的轻掺杂漏极(LDD)结区域,形成在第二源极/漏极区域和第二源极/漏极区域的另一端之间的第二轻掺杂漏极(LDD) 沟道区,具有形成在第一和第二源极/漏极区上的第一金属的金属硅化物层,形成在金属硅化物层上的绝缘层和具有用于暴露金属硅化物层的第一开口的栅极结构,以及导电层 具有第一金属并填充第一开口以接触金属硅化物层。