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1. 发明申请

US20100163518A1 Method For Fabricating Probe Tip 有权
标题翻译：制造探针尖端的方法
公开(公告)号：US20100163518A1
公开(公告)日：2010-07-01
申请号：US12601608
申请日：2008-05-29
申请人： Ki Pil Hong , Jong Hyeon Chae , Hac Ju Lee
发明人： Ki Pil Hong , Jong Hyeon Chae , Hac Ju Lee
IPC分类号： C23F1/00
CPC分类号： G01R3/00 , G01R1/06738
摘要： Disclosed is a method for fabricating a probe tip, capable of preventing a rapid increase of a surface size of a front end of the probe tip as the probe tip is worn out by a frequent contact with a wafer chip and, also, capable of improving the precision of the front end of the probe tip. The method for fabricating a probe tip includes forming a front end of the probe tip on a silicon wafer; forming a first protective layer which is patterned to expose a part of the front end of the probe tip; and forming a body of the probe tip in a portion opened by the pattern of the first protective layer.
摘要翻译：公开了一种用于制造探针尖端的方法，其能够防止由于与晶片芯片的频繁接触而使探针针尖磨损而导致探针尖端的前端的表面尺寸的快速增加，并且还能够改善探针尖端前端的精度。用于制造探针尖端的方法包括在硅晶片上形成探针尖端的前端; 形成第一保护层，其被图案化以暴露探针尖端的前端的一部分; 以及在由所述第一保护层的图案打开的部分中形成所述探针尖端的主体。

2. 发明授权

US08287745B2 Method for fabricating probe tip 有权
标题翻译：探针头制造方法
公开(公告)号：US08287745B2
公开(公告)日：2012-10-16
申请号：US12601608
申请日：2008-05-29
申请人： Ki Pil Hong , Jong Hyeon Chae , Hac Ju Lee
发明人： Ki Pil Hong , Jong Hyeon Chae , Hac Ju Lee
IPC分类号： C23F1/00 , G01Q70/16
CPC分类号： G01R3/00 , G01R1/06738
摘要： Disclosed is a method for fabricating a probe tip, capable of preventing a rapid increase of a surface size of a front end of the probe tip as the probe tip is worn out by a frequent contact with a wafer chip and, also, capable of improving the precision of the front end of the probe tip. The method for fabricating a probe tip includes forming a front end of the probe tip on a silicon wafer; forming a first protective layer which is patterned to expose a part of the front end of the probe tip; and forming a body of the probe tip in a portion opened by the pattern of the first protective layer.
摘要翻译：公开了一种用于制造探针尖端的方法，其能够防止由于与晶片芯片的频繁接触而使探针针尖磨损而导致探针尖端的前端的表面尺寸的快速增加，并且还能够改善探针尖端前端的精度。用于制造探针尖端的方法包括在硅晶片上形成探针尖端的前端; 形成第一保护层，其被图案化以暴露探针尖端的前端的一部分; 以及在由所述第一保护层的图案打开的部分中形成所述探针尖端的主体。

3. 发明申请

US20120241793A1 LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：发光二极管封装及其制造方法
公开(公告)号：US20120241793A1
公开(公告)日：2012-09-27
申请号：US13425156
申请日：2012-03-20
申请人： Chi Hyun IN , Jun Yong PARK , Kyu Ho LEE , Dae Woong SUH , Jong Hyeon CHAE , Chang Hoon KIM , Sung Hyun LEE
发明人： Chi Hyun IN , Jun Yong PARK , Kyu Ho LEE , Dae Woong SUH , Jong Hyeon CHAE , Chang Hoon KIM , Sung Hyun LEE
IPC分类号： H01L33/50 , H01L33/62
CPC分类号： H01L33/486 , H01L33/20 , H01L33/44 , H01L33/505 , H01L33/62 , H01L2224/16 , H01L2933/0033
摘要： Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.
摘要翻译：本文公开了一种发光二极管封装及其制造方法。发光二极管封装包括：衬底，设置在衬底的表面上并包括第一类型半导体层，有源层和第二类型半导体层的发光层，设置在第一类型半导体上的第一凸块层和设置有第二类型半导体层的第二凸起，至少覆盖发光层的保护层，以及设置在保护层上并连接到第一凸块和第二凸块的第一凸块焊盘和第二凸块焊盘，分别。

4. 发明申请

US20140361327A1 LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20140361327A1
公开(公告)日：2014-12-11
申请号：US14345382
申请日：2012-09-14
申请人： Jong Hyeon Chae , Jong Min Jang , Won Young Roh , Daewoong Suh , Dae Sung Cho , Joon Sup Lee , Kyu Ho Lee , Chi Hyun In
发明人： Jong Hyeon Chae , Jong Min Jang , Won Young Roh , Daewoong Suh , Dae Sung Cho , Joon Sup Lee , Kyu Ho Lee , Chi Hyun In
IPC分类号： H01L33/20 , H01L33/00 , H01L33/44 , H01L33/32 , H01L33/40 , H01L33/14
CPC分类号： H01L33/405 , H01L33/0075 , H01L33/08 , H01L33/12 , H01L33/14 , H01L33/20 , H01L33/22 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/486 , H01L33/62 , H01L2933/0016 , H01L2933/0025 , H01L2933/0058
摘要： The present invention relates to a light emitting diode and a method of manufacturing same. The light emitting diode includes: a first conductive semiconductor layer; a plurality of mesas that are disposed spaced apart from one another on the first conductive semiconductor layer, each mesa including an active layer and a second conductive semiconductor layer; reflective electrodes that are respectively disposed on the plurality of mesas and come into ohmic contact with the second conductive semiconductor layer; openings that cover the plurality of mesas and the first conductive semiconductor layer, are electrically insulated from the mesas, and expose the reflective electrodes to the upper region of each mesa; and a current spreading layer that comes into ohmic contact with the first conductive semiconductor layer. Thus, a light emitting diode that improves current spreading performance may be provided.
摘要翻译：本发明涉及一种发光二极管及其制造方法。发光二极管包括：第一导电半导体层; 在所述第一导电半导体层上彼此间隔开设置的多个台面，每个台面包括有源层和第二导电半导体层; 反射电极分别设置在多个台面上并与第二导电半导体层欧姆接触; 覆盖多个台面和第一导电半导体层的开口与台面电绝缘，并将反射电极暴露于每个台面的上部区域; 以及与第一导电半导体层欧姆接触的电流扩展层。因此，可以提供改善电流扩展性能的发光二极管。

5. 发明申请

US20100134126A1 PROBE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：用于制造它们的探针和方法
公开(公告)号：US20100134126A1
公开(公告)日：2010-06-03
申请号：US11816852
申请日：2005-03-31
申请人： Ki-Pil Hong , Jong-Hyeon Chae , Hac-Ju Lee , Young-Gun Park
发明人： Ki-Pil Hong , Jong-Hyeon Chae , Hac-Ju Lee , Young-Gun Park
IPC分类号： G01R31/02 , H01L21/768
CPC分类号： H01R12/526 , G01R1/06727 , G01R1/06733 , G01R3/00 , H01R12/58 , H01R13/2428 , H01R13/2442
摘要： A probe for making electric contact with a contact target includes a first part (10) including a first base portion (15) and a socket portion (17) formed on the first base portion; and a second part including (20) a second base portion (25) and a plug portion (21) formed on the second base portion. And the plug portion is removably coupled to the socket portion.
摘要翻译：用于与接触靶电接触的探针包括：第一部分（10），包括形成在第一基部上的第一基部（15）和插座部分（17）; 以及第二部分，包括形成在第二基部上的第二基部（25）和插塞部分（20）。并且插头部分可移除地联接到插座部分。

6. 发明授权

US10074778B2 Light emitting diode package and method for manufacturing the same 有权
公开(公告)号：US10074778B2
公开(公告)日：2018-09-11
申请号：US13425156
申请日：2012-03-20
申请人： Chi Hyun In , Jun Yong Park , Kyu Ho Lee , Dae Woong Suh , Jong Hyeon Chae , Chang Hoon Kim , Sung Hyun Lee
发明人： Chi Hyun In , Jun Yong Park , Kyu Ho Lee , Dae Woong Suh , Jong Hyeon Chae , Chang Hoon Kim , Sung Hyun Lee
IPC分类号： H01L33/50 , H01L33/62 , H01L33/48 , H01L33/20 , H01L33/44
CPC分类号： H01L33/486 , H01L33/20 , H01L33/44 , H01L33/505 , H01L33/62 , H01L2224/16 , H01L2933/0033
摘要： Disclosed herein are a light emitting diode package and a method of manufacturing the same. The light emitting diode package includes: a substrate, a light-emitting layer disposed on a surface of the substrate and including a first type semiconductor layer, an active layer, and a second type semiconductor layer, a first bump disposed on the first type semiconductor layer and a second bump disposed the second type semiconductor layer, a protective layer covering at least the light-emitting layer, and a first bump pad and a second bump pad disposed on the protective layer and connected to the first bump and the second bump, respectively.

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