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1. 发明申请

US20090186481A1 METHOD FOR INTEGRATING SELECTIVE LOW-TEMPERATURE RUTHENIUM DEPOSITION INTO COPPER METALLIZATION OF A SEMICONDUCTOR DEVICE 有权
标题翻译：将选择性低温RUMENIUM沉积物集成到半导体器件的铜金属化中的方法
公开(公告)号：US20090186481A1
公开(公告)日：2009-07-23
申请号：US12018074
申请日：2008-01-22
申请人： Kenji SUZUKI , Miho JOMEN , Jonathan RULLAN
发明人： Kenji SUZUKI , Miho JOMEN , Jonathan RULLAN
IPC分类号： H01L21/4763
CPC分类号： H01L21/76849 , C23C16/0218 , C23C16/16 , C23C16/4482 , H01L21/28562 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for integrating low-temperature selective Ru metal deposition into manufacturing of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. The method includes providing a patterned substrate containing a recessed feature in a dielectric layer, where the recessed feature is at least substantially filled with planarized bulk Cu metal, heat-treating the bulk Cu metal and the dielectric layer in the presence of H2, N2, or NH3, or a combination thereof, and selectively depositing a Ru metal film on the heat-treated planarized bulk Cu metal.
摘要翻译：将低温选择性Ru金属沉积集成到半导体器件制造中的方法，以改善体Cu金属中的电迁移和应力迁移。该方法包括提供在电介质层中含有凹陷特征的图案化衬底，其中凹陷特征至少基本上被平坦化的本体Cu金属填充，在H 2，N 2存在下热处理本体Cu金属和电介质层，或NH 3或其组合，并且在热处理的平坦化Cu体上选择性地沉积Ru金属膜。

2. 发明授权

US07884012B2 Void-free copper filling of recessed features for semiconductor devices 有权
标题翻译：半导体器件凹陷特征的无孔铜填充
公开(公告)号：US07884012B2
公开(公告)日：2011-02-08
申请号：US11864566
申请日：2007-09-28
申请人： Kenji Suzuki , Tadahiro Ishizaka , Miho Jomen , Jonathan Rullan
发明人： Kenji Suzuki , Tadahiro Ishizaka , Miho Jomen , Jonathan Rullan
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/76844 , H01L21/76862 , H01L21/76864 , H01L21/76868 , H01L21/76873 , H01L21/76874 , H01L21/76883
摘要： A method is provided for void-free copper (Cu) filling of recessed features in a semiconductor device. The method includes providing a patterned substrate containing a recessed feature, depositing a barrier film on the patterned substrate, including in the recessed feature, depositing a Ru metal film on the barrier film, and depositing a discontinuous Cu seed layer on the Ru metal film, where the Cu seed layer partially covers the Ru metal film in the recessed feature. The method further includes exposing the substrate to an oxidation source gas that oxidizes the Cu seed layer and the portion of the Ru metal film not covered by the Cu seed layer, heat-treating the oxidized Cu seed layer and the oxidized Ru metal film under high vacuum conditions or in the presence of an inert gas to activate the oxidized Ru metal film for Cu plating, and filling the recessed feature with bulk Cu metal. The exposure to the oxidation source gas can be an air exposure commonly encountered in semiconductor device manufacturing prior to Cu plating.
摘要翻译：提供了一种用于半导体器件中凹陷特征的无空隙铜（Cu）填充的方法。该方法包括提供含有凹陷特征的图案化衬底，在图案化衬底上沉积阻挡膜，包括在凹陷特征中，在阻挡膜上沉积Ru金属膜，以及在Ru金属膜上沉积不连续的Cu籽晶层，其中Cu籽晶层部分地覆盖凹陷特征中的Ru金属膜。该方法还包括将衬底暴露于氧化Cu籽晶层的氧化源气体和未被Cu籽晶层覆盖的Ru金属膜的部分，在高温下热处理氧化的Cu种子层和氧化的Ru金属膜真空条件下或在惰性气体存在下活化用于Cu电镀的氧化的Ru金属膜，并用块状Cu金属填充凹陷特征。暴露于氧化源气体可以是在镀铜之前在半导体器件制造中通常遇到的空气暴露。

3. 发明申请

US20090087981A1 VOID-FREE COPPER FILLING OF RECESSED FEATURES FOR SEMICONDUCTOR DEVICES 有权
标题翻译：无阻塞铜填充半导体器件的特征
公开(公告)号：US20090087981A1
公开(公告)日：2009-04-02
申请号：US11864566
申请日：2007-09-28
申请人： Kenji Suzuki , Tadahiro Ishizaka , Miho Jomen , Jonathan Rullan
发明人： Kenji Suzuki , Tadahiro Ishizaka , Miho Jomen , Jonathan Rullan
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/28518 , H01L21/2855 , H01L21/28556 , H01L21/76844 , H01L21/76862 , H01L21/76864 , H01L21/76868 , H01L21/76873 , H01L21/76874 , H01L21/76883
摘要： A method is provided for void-free copper (Cu) filling of recessed features in a semiconductor device. The method includes providing a patterned substrate containing a recessed feature, depositing a barrier film on the patterned substrate, including in the recessed feature, depositing a Ru metal film on the barrier film, and depositing a discontinuous Cu seed layer on the Ru metal film, where the Cu seed layer partially covers the Ru metal film in the recessed feature. The method further includes exposing the substrate to an oxidation source gas that oxidizes the Cu seed layer and the portion of the Ru metal film not covered by the Cu seed layer, heat-treating the oxidized Cu seed layer and the oxidized Ru metal film under high vacuum conditions or in the presence of an inert gas to activate the oxidized Ru metal film for Cu plating, and filling the recessed feature with bulk Cu metal. The exposure to the oxidation source gas can be an air exposure commonly encountered in semiconductor device manufacturing prior to Cu plating.
摘要翻译：提供了一种用于半导体器件中凹陷特征的无空隙铜（Cu）填充的方法。该方法包括提供含有凹陷特征的图案化衬底，在图案化衬底上沉积阻挡膜，包括在凹陷特征中，在阻挡膜上沉积Ru金属膜，以及在Ru金属膜上沉积不连续的Cu籽晶层，其中Cu籽晶层部分地覆盖凹陷特征中的Ru金属膜。该方法还包括将衬底暴露于氧化Cu籽晶层的氧化源气体和未被Cu籽晶层覆盖的Ru金属膜的部分，在高温下热处理氧化的Cu种子层和氧化的Ru金属膜真空条件下或在惰性气体存在下活化用于Cu电镀的氧化的Ru金属膜，并用块状Cu金属填充凹陷特征。暴露于氧化源气体可以是在镀铜之前在半导体器件制造中通常遇到的空气暴露。

4. 发明申请

US20130252417A1 THIN FILM FORMING METHOD 审中-公开
标题翻译：薄膜成型方法
公开(公告)号：US20130252417A1
公开(公告)日：2013-09-26
申请号：US13619083
申请日：2012-09-14
申请人： Tadahiro ISHIZAKA , Jonathan Rullan , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Takara Kato , Tatsuo Hatano , Hiroaki Kawasaki
发明人： Tadahiro ISHIZAKA , Jonathan Rullan , Osamu Yokoyama , Atsushi Gomi , Chiaki Yasumuro , Takara Kato , Tatsuo Hatano , Hiroaki Kawasaki
IPC分类号： H01L21/768
CPC分类号： H01L21/76829 , C23C14/025 , C23C14/18 , C23C14/5806 , C23C14/5873 , C23C16/0272 , C23C16/08 , C23C16/56 , C23C28/322 , C23C28/34 , C23C28/345 , C23C28/42 , H01L21/76846 , H01L21/76877 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/09701 , H01L2924/00
摘要： A thin film forming method in which a thin film is formed on a surface of a target object to be processed to fill a recess formed in the surface of the target object includes the steps of forming a metal layer for filling on the surface of the target object to fill the recess formed in the surface of the target object and forming a metal film for preventing diffusion on an entire surface of the target object to cover the metal layer for filling. The thin film forming method further includes the step of annealing the target object having the metal film for preventing diffusion formed thereon.
摘要翻译：一种薄膜形成方法，其中在要处理的目标物体的表面上形成薄膜以填充形成在目标物体的表面上的凹部的薄膜形成方法包括以下步骤：形成用于填充在靶材表面上的金属层目的是填充形成在目标物体的表面上的凹部，并形成用于防止在目标物体的整个表面上扩散的金属膜，以覆盖用于填充的金属层。薄膜形成方法还包括退火具有用于防止扩散形成的金属膜的目标物体的步骤。

5. 发明授权

US07776740B2 Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device 有权
标题翻译：将选择性低温钌沉积物集成到半导体器件的铜金属化中的方法
公开(公告)号：US07776740B2
公开(公告)日：2010-08-17
申请号：US12018074
申请日：2008-01-22
申请人： Kenji Suzuki , Miho Jomen , Jonathan Rullan
发明人： Kenji Suzuki , Miho Jomen , Jonathan Rullan
IPC分类号： H01L21/44
CPC分类号： H01L21/76849 , C23C16/0218 , C23C16/16 , C23C16/4482 , H01L21/28562 , H01L21/76883 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for integrating low-temperature selective Ru metal deposition into manufacturing of semiconductor devices to improve electromigration and stress migration in bulk Cu metal. The method includes providing a patterned substrate containing a recessed feature in a dielectric layer, where the recessed feature is at least substantially filled with planarized bulk Cu metal, heat-treating the bulk Cu metal and the dielectric layer in the presence of H2, N2, or NH3, or a combination thereof, and selectively depositing a Ru metal film on the heat-treated planarized bulk Cu metal.
摘要翻译：将低温选择性Ru金属沉积集成到半导体器件制造中的方法，以改善体Cu金属中的电迁移和应力迁移。该方法包括提供在电介质层中含有凹陷特征的图案化衬底，其中凹陷特征至少基本上被平坦化的本体Cu金属填充，在H 2，N 2存在下热处理本体Cu金属和电介质层，或NH 3或其组合，并且在热处理的平坦化Cu体上选择性地沉积Ru金属膜。

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