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    • 1. 发明授权
    • Flat field emitter displays
    • 平场发射器显示
    • US06727642B1
    • 2004-04-27
    • US09646730
    • 2000-09-20
    • Gyu Hyeong ChoNam Sung JungGyun ChaeTae Ha RyooJon Woon HongSeung Tak RyuYoung Ki Kim
    • Gyu Hyeong ChoNam Sung JungGyun ChaeTae Ha RyooJon Woon HongSeung Tak RyuYoung Ki Kim
    • H01J162
    • H01J1/304H01J2201/319H01J2329/00
    • Disclosed are flat panel field emitter displays whose unit cell structure adopt a planar cathode structure in stead of a conventional microtip structure, so as to increase the degree of integration and can be operated at low operation voltages at high speeds. In the structure, a channel insulator is formed below the cathode and underlaid by a gate. By means of the gate voltage, the electron emission from the cathode can be controlled. The electrodes in the structure are arranged in the order of anode, cathode and gate, allowing the simplification of processes. With the ease of controlling the distance between electrodes, the displays can be applied for almost all video systems from small sizes to large screen area displays, in place of conventional displays. The displays allows conventional semiconductor processes and facilities to be utilized as they are.
    • 公开了平板型场发射体显示器,其单体电池结构采用平面阴极结构代替常规微尖端结构,从而提高集成度,并可在高速下在低工作电压下工作。 在该结构中,沟槽绝缘体形成在阴极下方并由栅极覆盖。 通过栅极电压,可以控制来自阴极的电子发射。 结构中的电极按阳极,阴极和栅极的顺序排列,允许简化工艺。 通过容易地控制电极之间的距离,显示器可以应用于从小尺寸到大屏幕区域显示器的几乎所有的视频系统,代替传统的显示器。 这些显示器允许常规的半导体工艺和设备被使用。