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    • 1. 发明授权
    • Phase conjugate relative position sensor
    • 相位共轭相对位置传感器
    • US4640618A
    • 1987-02-03
    • US548585
    • 1983-11-03
    • John M. TracyPochi A. YehMohsen Khoshnevisan
    • John M. TracyPochi A. YehMohsen Khoshnevisan
    • G01C21/16G01P3/50G02F1/35G01J3/36
    • G01P3/50G01C21/16G02F1/3538
    • A relative position sensor is suitable for inertial navigation situations in which deviations from a predetermined position schedule are detected. A standing wave is established between a pair of opposed phase conjugate reflectors in a resonating cavity, and relative movement between the standing wave and the cavity is sensed. Since the standing wave continues to travel at its initial velocity regardless of deviations from that velocity by the resonator, deviations in the position of the resonator relative to its projected position based on the initial velocity can be measured. In a preferred embodiment, four-wave mixers are used as the phase conjugate reflectors, the phase conjugate medium within the mixers is made coextensive with the wave propagation medium between the mixers, and relative movement is sensed by monitoring the intensity of the standing wave at at least one location which is fixed relative to the resonator.
    • 相对位置传感器适用于检测到与预定位置调度的偏差的惯性导航情况。 在谐振腔中的一对相对共轭反射器之间建立驻波,并且感测驻波和腔之间的相对运动。 由于驻波以其初始速度继续行进,无论谐振器是否与该速度偏离,可以测量谐振器相对于其投影位置的位置的偏差,基于初始速度。 在优选实施例中,使用四波混频器作为相位共轭反射器,混频器内的相位共轭介质与混频器之间的波传播介质共同延伸,并且通过监测驻波的强度来感测相对运动 至少一个相对于谐振器固定的位置。
    • 2. 发明授权
    • Electro-optically tuned rejection filter
    • 电光调制滤波器
    • US4508964A
    • 1985-04-02
    • US426348
    • 1982-09-29
    • William J. Gunning, IIIJohn M. Tracy
    • William J. Gunning, IIIJohn M. Tracy
    • G02F1/03G02F1/21
    • G02F1/21G02F1/03G02F2001/213
    • Disclosed is an apparatus for removing electromagnetic energy at a wavelength .lambda. from a beam of electromagnetic energy. Included is an electro-optically tunable Fabry-Perot filter, with an electro-optic crystal having parallel incident and exit surfaces, a first transparent electrode on the incident surface, a second transparent electrode on the exit surface, an incident reflecting layer, and an exit reflecting layer. A detector produces an electrical signal in response to the electromagnetic energy transmitted by the filter. A lock-in amplifier receives the electrical signal and outputs to a control amplifier which also receives as an input a source of alternating current. A high voltage amplifier receives the output of the control amplifier and applies its output across the electro-optic crystal.
    • 公开了一种用于从波长的电磁能去除波长为λ的电磁能的装置。 包括电光可调法布里 - 珀罗滤光片,电光晶体具有平行的入射和出射表面,入射表面上的第一透明电极,出射表面上的第二透明电极,入射反射层和 退出反射层。 检测器响应于由过滤器传输的电磁能产生电信号。 锁定放大器接收电信号并输出​​到控制放大器,该控制放大器还接收作为输入的交流电源。 高压放大器接收控制放大器的输出,并将其输出应用于电光晶体。
    • 5. 发明授权
    • Multilayer electro-optically tunable filter
    • 多层电光可调滤波器
    • US4240696A
    • 1980-12-23
    • US93362
    • 1979-11-13
    • John M. TracyPochi A. Yeh
    • John M. TracyPochi A. Yeh
    • G02F1/03G02F1/21
    • G02F1/21G02F1/03G02F2001/213
    • Disclosed is an optical filter, including a plurality of adjacent layer pairs, each pair having an incident and an emergent surface and including a first dielectric layer having a thickness t and a refractive index n, a second dielectric layer, adjacent to the first layer, having a thickness t and a refractive index n, and a control electrode disposed between and in electrical contact with the layers. The filter further includes a plurality of ground electrodes disposed on the layer pairs to electrically contact each incident and emergent surface, a source of electric potential, and a switch for connecting the source between the control electrodes and the ground electrodes, whereby light having a wavelength .lambda.=4nt will be reflected by the filter upon closing the switch and thereby applying the electric potential in opposite directions across the first and second layer pairs. The plurality of layer pairs may include m layer pairs, with the thickness of each dielectric layer in the ith pair (i=1, 2, 3 . . . m) being t.sub.i, such that nt.sub.i =.lambda..sub.i /4, the filter thereby being adapted to reflect light having wavelength in the range .lambda. .sub.1, .lambda..sub.2, .lambda..sub.3 . . . .lambda..sub.m.
    • 公开了一种包括多个相邻层对的滤光器,每对具有入射和出射表面,并且包括具有厚度t和折射率n的第一介电层,与第一层相邻的第二介电层, 具有厚度t和折射率n,以及设置在层之间并与其电接触的控制电极。 滤波器还包括设置在层对上的多个接地电极,以电接触每个入射和出射表面,电位源,以及用于连接控制电极和接地电极之间的源的开关,由此具有波长 λ= 4nt将在闭合开关时由滤波器反射,从而跨越第一和第二层对在相反方向施加电位。 多个层对可以包括m层对,其中第i对(i = 1,2,3,...,m)中的每个介电层的厚度为ti,使得nti =λi / 4,因此滤波器 适于反射具有λ1,λ2,λ3范围内的波长的光。 。 。 lambda m
    • 6. 发明授权
    • Probe station
    • 探测站
    • US4115736A
    • 1978-09-19
    • US776037
    • 1977-03-09
    • John M. Tracy
    • John M. Tracy
    • G01R1/073G01R31/28G01R31/02G01R31/22
    • G01R31/2886G01R1/07314
    • A probe station having a cryogenic container preferably situated in a vacuum chamber. Semiconductor devices to be tested are attached to the container of cryogenic liquid. Electrical contact to the devices is made using contact wires which are moved by manipulators lying outside the vacuum chamber. Integrity of the vacuum at the manipulators is assured by using bellows to allow for the movement of the contact wires. Visual placement of the contact wires on the devices to be tested is accomplished with the aid of a microscope external to the vacuum. One end of the vacuum chamber is made of clear plastic to be used as the microscope viewing window. A spring is used external to the vacuum space to counteract the effects of atmospheric pressure on the movable bellows. The semiconductor devices are then tested by the connection of the appropriate test equipment to the electrical contact wires. As a result thereof, semiconductor devices can be reliably and effectively tested under the same pressure and temperature at which they are operable.
    • 具有优选位于真空室中的低温容器的探针台。 要测试的半导体器件附着在低温液体容器上。 使用由躺在真空室外部的操纵器移动的接触线来进行与设备的电接触。 通过使用波纹管来确保接触线的运动,确保操纵器处真空的完整性。 借助于真空外部的显微镜,可以将接触线的可视放置在待测试的设备上。 真空室的一端由透明塑料制成,用作显微镜观察窗。 在真空空间外部使用弹簧以抵抗大气压力对可移动波纹管的影响。 然后通过将适当的测试设备连接到电接触线来测试半导体器件。 作为其结果,可以在可操作的相同压力和温度下可靠且有效地测试半导体器件。