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    • 1. 发明申请
    • Method for estimating the early failure rate of semiconductor devices
    • 估算半导体器件早期故障率的方法
    • US20060107094A1
    • 2006-05-18
    • US10982348
    • 2004-11-03
    • Thomas AndersonJohn Carulli
    • Thomas AndersonJohn Carulli
    • G06F11/00
    • G06F11/008G06F11/24
    • According to one embodiment of the invention, a method for estimating the failure rate of semiconductor devices includes obtaining accelerated stress duration data for a plurality of semiconductor devices, determining which of the semiconductor devices fail, classifying the defects for the failed semiconductor devices, determining a distribution model for the accelerated stress duration data, determining a set of parameters for the distribution model, determining a relative proportion of each defect classification to the total number of defect classifications, determining temperature and voltage acceleration factors for each defect classification, identifying actual operating conditions for the semiconductor devices, comparing the actual operating conditions for the semiconductor device with the distribution model, and determining a defect ratio for the semiconductor devices at the actual operating conditions for a predetermined time period based on the comparison.
    • 根据本发明的一个实施例,一种用于估计半导体器件的故障率的方法包括:获得用于多个半导体器件的加速应力持续时间数据,确定半导体器件中的哪一个失效,分类故障半导体器件的缺陷,确定 加速应力持续时间数据的分布模型,确定分布模型的一组参数,确定每个缺陷分类与缺陷分类总数的相对比例,确定每个缺陷分类的温度和电压加速因子,识别实际操作条件 对于半导体器件,将半导体器件的实际工作条件与分布模型进行比较,并且基于该比较,在实际工作条件下确定预定时间段内的半导体器件的缺陷率。