专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20190298715A1 IMMUNE EFFECTOR CELL THERAPIES WITH ENHANCED EFFICACY 审中-公开
公开(公告)号：US20190298715A1
公开(公告)日：2019-10-03
申请号：US16338085
申请日：2017-09-29
申请人： Gregory Motz , Konstantinos John Mavrakias , Jinbiao Liu , Lei Liu , Qiangang Zheng , Guoliang Xun , Qitao Xiao , Novartis AG , The Trustees of the University of Pennsylvania
发明人： Gregory Motz , Konstantinos John Mavrakias , Jinbiao Liu , Lei Liu , Qiangang Zheng , Guoliang Xun , Qitao Xiao
IPC分类号： A61K31/496 , A61K31/444 , C12N15/113 , A61K31/404 , A61K35/17
摘要： Provided herein is the use of LSD1 inhibitors in connection with use and manufacture of immune effector cells (e.g., T cells, NK cells), e.g., engineered to express a chimeric antigen receptor (CAR), to treat a subject having a disease, e.g., a disease associated with expression of a tumor antigen.

2. 发明申请

US20190000880A1 IMMUNE EFFECTOR CELL THERAPIES WITH ENHANCED EFFICACY 审中-公开
公开(公告)号：US20190000880A1
公开(公告)日：2019-01-03
申请号：US16066855
申请日：2016-12-30
申请人： Gregory Motz , Konstantinos John Mavrakias , Jinbiao Liu , Lei Liu , Qiangang Zheng , Guoliang Xun , Qitao Xiao , Novartis AG , The Trustees of the University of Pennsylvania
发明人： Gregory Motz , Konstantinos John Mavrakias , Jinbiao Liu , Lei Liu , Qiangang Zheng , Guoliang Xun , Qitao Xiao
IPC分类号： A61K35/17 , C07D207/34 , C12N5/0783 , C07D401/14 , C12N15/113 , A61P35/00 , C07K16/28 , C07K16/24 , C07K16/30
摘要： Provided are the use of LSD1 inhibitors in connection with use and manufacture of immune effector cells (e.g., T cells, NK cells), e.g., engineered to express a chimeric antigen receptor (CAR), to treat a subject having a disease, e.g., a disease associated with expression of a tumor antigen.

3. 发明授权

US08252689B2 Chemical-mechanical planarization method and method for fabricating metal gate in gate-last process 有权
标题翻译：化学机械平面化方法及其制造方法
公开(公告)号：US08252689B2
公开(公告)日：2012-08-28
申请号：US13142736
申请日：2011-04-12
申请人： Tao Yang , Jinbiao Liu , Xiaobin He , Chao Zhao , Dapeng Chen
发明人： Tao Yang , Jinbiao Liu , Xiaobin He , Chao Zhao , Dapeng Chen
IPC分类号： H01L21/302
CPC分类号： H01L21/31053 , H01L21/31155 , H01L29/66545 , H01L29/66606 , H01L29/78
摘要： The present invention provides a chemical-mechanical planarization method. The chemical-mechanical planarization method includes: providing a substrate including a gate and source/drain regions on the sides of the gate, the gate and the source/drain regions being overlay by an insulating layer, and the insulating layer including a protruding part above the gate and a recessed part above a surface of the substrate between gates; selectively doping the insulating layer such that only the protruding part is doped; and performing CMP on the substrate after doping, to remove the protruding part and planarize the surface of the substrate. By selectively doping the insulating layer, the method makes only the protruding part of the insulating layer doped, enhancing the corrosive attacks on the material of the protruding part by the slurry in the CMP, and increasing the removal rate of the material of the protruding part by the CMP.
摘要翻译：本发明提供了一种化学机械平面化方法。化学机械平面化方法包括：在栅极的侧面设置包括栅极和源极/漏极区域的衬底，栅极和源极/漏极区域被绝缘层覆盖，并且绝缘层包括在上方的突出部分栅极和位于栅极之间的衬底表面上方的凹陷部分; 选择性地掺杂绝缘层，使得只有突出部分被掺杂; 并且在掺杂之后在衬底上执行CMP以去除突出部分并使衬底的表面平坦化。通过选择性地掺杂绝缘层，该方法仅使掺杂的绝缘层的突出部分增加了CMP中的浆料对突出部分的材料的腐蚀攻击，并且增加了突出部分的材料的去除速率由CMP。

4. 发明申请

US20120135589A1 CHEMICAL-MECHANICAL PLANARIZATION METHOD AND METHOD FOR FABRICATING METAL GATE IN GATE-LAST PROCESS 有权
标题翻译：化学机械平面化方法和方法，用于在门过程中制造金属门
公开(公告)号：US20120135589A1
公开(公告)日：2012-05-31
申请号：US13142736
申请日：2011-04-12
申请人： Tao Yang , Jinbiao Liu , Xiaobin He , Chao Zhao , Dapeng Chen
发明人： Tao Yang , Jinbiao Liu , Xiaobin He , Chao Zhao , Dapeng Chen
IPC分类号： H01L21/306 , H01L21/304 , H01L21/28
CPC分类号： H01L21/31053 , H01L21/31155 , H01L29/66545 , H01L29/66606 , H01L29/78
摘要： The present invention provides a chemical-mechanical planarization method and a method for fabricating a metal gate in gate last process. The chemical-mechanical planarization method includes: providing a substrate including a gate and source/drain regions on the sides of the gate, the gate and the source/drain regions being overlay by an insulating layer, and the insulating layer including a protruding part above the gate and a recessed part above a surface of the substrate between gates; selectively doping the insulating layer such that only the protruding part is doped; and performing CMP on the substrate after doping, to remove the protruding part and planarize the surface of the substrate. By selectively doping the insulating layer, the method makes only the protruding part of the insulating layer doped, enhancing the corrosive attacks on the material of the protruding part by the slurry in the CMP, and increasing the removal rate of the material of the protruding part by the CMP, thereby improving the within-die uniformity of the process, consequently, there will not be excess metal in the insulating layer between gates, thereby preventing device short circuit risk induced by POP CMP process.
摘要翻译：本发明提供一种化学机械平面化方法及其制造方法。化学机械平面化方法包括：在栅极的侧面设置包括栅极和源极/漏极区域的衬底，栅极和源极/漏极区域被绝缘层覆盖，并且绝缘层包括在上方的突出部分栅极和位于栅极之间的衬底表面上方的凹陷部分; 选择性地掺杂绝缘层，使得只有突出部分被掺杂; 并且在掺杂之后在衬底上执行CMP以去除突出部分并使衬底的表面平坦化。通过选择性地掺杂绝缘层，该方法仅使掺杂的绝缘层的突出部分增加了CMP中的浆料对突出部分的材料的腐蚀攻击，并且增加了突出部分的材料的去除速率通过CMP，从而提高了工艺的管芯内均匀性，因此在栅极之间的绝缘层中不会有过多的金属，从而防止POP CMP工艺引起的器件短路风险。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式