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    • 3. 发明授权
    • Motion adaptive noise reduction method and system
    • 运动自适应降噪方法和系统
    • US06784944B2
    • 2004-08-31
    • US09885775
    • 2001-06-19
    • Biao ZhangJin Ji
    • Biao ZhangJin Ji
    • H04N521
    • H04N9/646H04N5/21
    • A method and system of noise filtering is provided. The pixels of a first filter mask are separated into groups based on luminance . . . The sizes of each group is determined and a largest group is selected. The distance of each group of pixels from the largest group is also calculated. Pixels in groups that are small compared to the largest group and far from the largest group are tagged as noisy. After tagging the noisy pixels, additional filtering can be applied to the pixels of first filter mask without degradation from the tagged pixels.
    • 提供了噪声滤波的方法和系统。 基于亮度将第一滤波器掩模的像素分成组。 。 。 确定每组的大小,并选择最大组。 还计算每组像素与最大组的距离。 与最大组相比,远离最大组的小组中的像素被标记为嘈杂。 在标记噪声像素之后,可以对第一滤波器掩码的像素应用附加滤波,而不会从标记的像素降级。
    • 6. 发明授权
    • Battery protection circuit
    • 电池保护电路
    • US08953293B2
    • 2015-02-10
    • US13673077
    • 2012-11-09
    • Se-Jin Ji
    • Se-Jin Ji
    • H02H3/027H02J7/00
    • H02J7/0031H01M10/42H02J7/0026H02J7/0029
    • A battery pack including a battery and a battery protection circuit is disclosed. In one aspect, the battery protection circuit comprises a protective device configured to inhibit a flow of current between an electrode of the circuit and the battery when activated. The battery protection circuit further comprises a primary protection circuit and a secondary protection circuit. The primary protection circuit is configured to generate a control signal for control the protective device when detecting an abnormal voltage in a unit cell of the battery. The secondary protection circuit is configured to activate the protective device, either when receiving the control signal from the primary protection circuit or when detecting an abnormal voltage in a unit cell of the battery.
    • 公开了一种包括电池和电池保护电路的电池组。 在一个方面,电池保护电路包括保护装置,其被配置为当激活时抑制电路的电极和电池之间的电流流动。 电池保护电路还包括主保护电路和次级保护电路。 主保护电路被配置为当检测到电池的单元电池中的异常电压时,产生用于控制保护装置的控制信号。 辅助保护电路被配置为在接收到来自主保护电路的控制信号时或当检测到电池的单元电池中的异常电压时启动保护装置。
    • 7. 发明申请
    • FLASH MULTI-LEVEL THRESHOLD DISTRIBUTION SCHEME
    • FLASH多级阈值分配方案
    • US20120087193A1
    • 2012-04-12
    • US13328762
    • 2011-12-16
    • Jin-Ji KIM
    • Jin-Ji KIM
    • G11C16/10
    • G11C16/34G11C11/5628G11C11/5642G11C16/0483G11C16/10G11C16/12G11C16/344G11C16/3454G11C2211/5621
    • A threshold voltage distribution scheme for multi-level Flash cells where an erase threshold voltage and at least one programmed threshold voltage lie in an erase voltage domain. Having at least one programmed threshold voltage in the erase voltage domain reduces the Vread voltage level to minimize read disturb effects, while extending the life span of the multi-level Flash cells as the threshold voltage distance between programmed states is maximized. The erase voltage domain can be less than 0V while a program voltage domain is greater than 0V. Accordingly, circuits for program verifying and reading multi-level Flash cells having a programmed threshold voltage in the erase voltage domain and the program voltage domain use negative and positive high voltages.
    • 用于多电平闪存单元的阈值电压分配方案,其中擦除阈值电压和至少一个编程的阈值电压位于擦除电压域中。 在擦除电压域中至少有一个编程的阈值电压降低了Vread电压电平,以最小化读取干扰效应,同时随着编程状态之间的阈值电压距离最大化,延长多电平闪存单元的使用寿命。 编程电压域大于0V时,擦除电压域可以小于0V。 因此,用于程序验证和读取具有在擦除电压域中的编程阈值电压和编程电压域的多电平闪存单元的电路使用负和正高电压。
    • 9. 发明申请
    • FLASH MULTI-LEVEL THRESHOLD DISTRIBUTION SCHEME
    • FLASH多级阈值分配方案
    • US20110007564A1
    • 2011-01-13
    • US12884939
    • 2010-09-17
    • Jin-Ji KIM
    • Jin-Ji KIM
    • G11C16/04
    • G11C16/34G11C11/5628G11C11/5642G11C16/0483G11C16/10G11C16/12G11C16/344G11C16/3454G11C2211/5621
    • A threshold voltage distribution scheme for multi-level Flash cells where an erase threshold voltage and at least one programmed threshold voltage lie in an erase voltage domain. Having at least one programmed threshold voltage in the erase voltage domain reduces the Vread voltage level to minimize read disturb effects, while extending the life span of the multi-level Flash cells as the threshold voltage distance between programmed states is maximized. The erase voltage domain can be less than 0V while a program voltage domain is greater than 0V. Accordingly, circuits for program verifying and reading multi-level Flash cells having a programmed threshold voltage in the erase voltage domain and the program voltage domain use negative and positive high voltages.
    • 用于多电平闪存单元的阈值电压分配方案,其中擦除阈值电压和至少一个编程的阈值电压位于擦除电压域中。 在擦除电压域中至少有一个编程的阈值电压降低了Vread电压电平,以最小化读取干扰效应,同时随着编程状态之间的阈值电压距离最大化,延长多电平闪存单元的使用寿命。 编程电压域大于0V时,擦除电压域可以小于0V。 因此,用于程序验证和读取具有在擦除电压域中的编程阈值电压和编程电压域的多电平闪存单元的电路使用负和正高电压。
    • 10. 发明申请
    • SURFACE PLASMON WAVELENGTH CONVERTER
    • 表面等离子体波长转换器
    • US20100126566A1
    • 2010-05-27
    • US12621928
    • 2009-11-19
    • Jin Ji
    • Jin Ji
    • G02F1/35H01L31/02
    • H01L31/02322G02B5/008G02F2/02G02F2202/36G02F2203/10H01L31/055Y02E10/52
    • A surface plasmon wavelength converter device includes a metallic film which has a plurality of nanofeatures. A wavelength conversion layer having a plurality of centers is disposed adjacent to the metallic film. The surface plasmon wavelength converter device is configured to respond to an incident electromagnetic radiation having a first wavelength by radiating away from the surface plasmon wavelength converter device an electromagnetic radiation having a second wavelength. A surface plasmon wavelength converter device having a metallic film and at least one center disposed in at least one of a plurality of nanofeatures of the metallic film is also described. A surface plasmon wavelength converter device having a transparent conductive oxide (TCO) film having a plurality of metallic nanofeatures, adjacent to a wavelength conversion layer, and a TCO film having a plurality of metallic nanofeatures with at least one center disposed therein is also described.
    • 表面等离子体波长转换器装置包括具有多个纳米尺度的金属膜。 具有多个中心的波长转换层邻近金属膜设置。 表面等离子体激元波长转换器装置被配置为通过从表面等离子体波长转换器装置辐射具有第二波长的电磁辐射来响应具有第一波长的入射电磁辐射。 还描述了具有金属膜和设置在金属膜的多个纳米尺度中的至少一个中的至少一个中心的表面等离子体波长转换器装置。 还描述了具有与波长转换层相邻的具有多个金属纳米尺度的透明导电氧化物(TCO)膜的表面等离子体激元波长转换器装置和具有至少一个设置在其中的多个金属纳米膜的TCO膜。