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1. 发明申请

US20190350215A1 METHOD FOR PREPARING FUNCTIONAL INGREDIENT-CONTAINING KIMCHI CONTAINING DENDROPANAX MORBIFERA LEV. EXTRACT 审中-公开
公开(公告)号：US20190350215A1
公开(公告)日：2019-11-21
申请号：US16484243
申请日：2017-02-16
申请人： Ji Hwan Park , Ju Yeon Yu
发明人： Ji Hwan Park , Ju Yeon Yu
IPC分类号： A23B7/10 , A23L19/20
摘要： According to a method of manufacturing kimchi of the present invention, there is provided high-quality kimchi which contains Dendropanax morbifera Lev. and one or more functional ingredients selected from among a dandelion, Capsella bursa-pastoris, Kalopanax septemlobus, Cuscuta chinensis Lamarck, and Sambucus williamsii var. coreana Nakai, so that an irritating odor is reduced, freshness is maintained over a long period of time, an improved mouthfeel is ensured, excessive fermentation caused by the occurrence of microorganisms is prevented, and storage stability is improved.

2. 发明授权

US09256508B2 Method and apparatus for controlling power in low-power multi-core system 有权
标题翻译：低功耗多核系统功率控制方法及装置
公开(公告)号：US09256508B2
公开(公告)日：2016-02-09
申请号：US13508149
申请日：2010-11-04
申请人： Il-Hyun Cho , Sung-Joon Jang , Hyun-Moo Kim , Nam-Su Ha , Jin-Hyo Kim , Tae-Il Kim , Ji-Hwan Park , Hye-Sun Kim , Jin-Kyoung Du
发明人： Il-Hyun Cho , Sung-Joon Jang , Hyun-Moo Kim , Nam-Su Ha , Jin-Hyo Kim , Tae-Il Kim , Ji-Hwan Park , Hye-Sun Kim , Jin-Kyoung Du
IPC分类号： G06F1/00 , G06F1/26 , G06F11/34 , G06F1/32 , G06F9/50
CPC分类号： G06F11/34 , G06F1/3287 , G06F9/5061 , G06F9/5094 , Y02D10/171 , Y02D10/22 , Y02D10/34 , Y02D10/36
摘要： A method and apparatus for controlling power in a low-power multi-core system, including receiving task information from an Operation System (OS) kernel upon start and end of a task, estimating a future CPU usage using a current CPU usage in the task information, monitoring memory-related information in the task information, comparing a change in the current CPU usage with the monitored memory-related information, establishing a policy for power control based on the estimated CPU usage and the monitored memory-related information, and controlling on/off of multiple cores according to the established policy. By doing so, it is possible to solve the problems caused by performing DPM using only the CPU usage.
摘要翻译：一种用于在低功率多核系统中控制功率的方法和装置，包括在任务开始和结束时从操作系统（OS）内核接收任务信息，使用该任务中的当前CPU使用估计将来的CPU使用信息，监视任务信息中的内存相关信息，将当前CPU使用情况的变化与所监视的存储器相关信息进行比较，基于所估计的CPU使用和所监视的与存储器有关的信息建立用于功率控制的策略，以及控制根据既定政策开启/关闭多个核心。通过这样做，可以解决仅使用CPU使用执行DPM所引起的问题。

3. 发明申请

US20120216054A1 METHOD AND APPARATUS FOR CONTROLLING POWER IN LOW-POWER MULTI-CORE SYSTEM 有权
标题翻译：用于控制低功率多核系统功率的方法和装置
公开(公告)号：US20120216054A1
公开(公告)日：2012-08-23
申请号：US13508149
申请日：2010-11-04
申请人： Il-Hyun Cho , Sung-Joon Jang , Hyun-Moo Kim , Nam-Su Ha , Jin-Hyo Kim , Tae-Il Kim , Ji-Hwan Park , Hye-Sun Kim , Jin-Kyoung Du
发明人： Il-Hyun Cho , Sung-Joon Jang , Hyun-Moo Kim , Nam-Su Ha , Jin-Hyo Kim , Tae-Il Kim , Ji-Hwan Park , Hye-Sun Kim , Jin-Kyoung Du
IPC分类号： G06F1/26 , G06F11/34
CPC分类号： G06F11/34 , G06F1/3287 , G06F9/5061 , G06F9/5094 , Y02D10/171 , Y02D10/22 , Y02D10/34 , Y02D10/36
摘要： A method and apparatus for controlling power in a low-power multi-core system, including receiving task information from an Operation System (OS) kernel upon start and end of a task, estimating a future CPU usage using a current CPU usage in the task information, monitoring memory-related information in the task information, comparing a change in the current CPU usage with the monitored memory-related information, establishing a policy for power control based on the estimated CPU usage and the monitored memory-related information, and controlling on/off of multiple cores according to the established policy. By doing so, it is possible to solve the problems caused by performing DPM using only the CPU usage.
摘要翻译：一种用于在低功率多核系统中控制功率的方法和装置，包括在任务开始和结束时从操作系统（OS）内核接收任务信息，使用该任务中的当前CPU使用估计将来的CPU使用信息，监视任务信息中的内存相关信息，将当前CPU使用情况的变化与所监视的存储器相关信息进行比较，基于所估计的CPU使用和所监视的与存储器有关的信息建立用于功率控制的策略，以及控制根据既定政策开启/关闭多个核心。通过这样做，可以解决仅使用CPU使用执行DPM所引起的问题。

4. 发明授权

US08124438B2 Method of fabricating CMOS image sensor 失效
标题翻译： CMOS图像传感器的制作方法
公开(公告)号：US08124438B2
公开(公告)日：2012-02-28
申请号：US12565983
申请日：2009-09-24
申请人： Ji-Hwan Park
发明人： Ji-Hwan Park
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14683
摘要： A CMOS image sensor and a method of fabricating the same. The CMOS image sensor may minimize disappearance of electrons generated by light without transmission of electrons to a transfer gate. A method of manufacturing a CMOS image sensor may include forming a trench over an isolation region of a semiconductor substrate to define an active region including a photodiode region and a transistor region. The method may include forming first conductivity-type ion implanted regions over a trench side wall of a photodiode region and over a region adjacent to the transistor region. The method may include forming second conductivity-type ion implanted regions between a first conductivity-type ion implanted region and a trench, and between a lower part of a transistor region and a first conductivity-type ion implanted region. The method may include forming an isolation layer, forming a gate electrode and a spacer, and/or forming a photodiode.
摘要翻译： CMOS图像传感器及其制造方法。 CMOS图像传感器可以最小化由光产生的电子的消失而不将电子传输到传输门。制造CMOS图像传感器的方法可以包括在半导体衬底的隔离区域上形成沟槽，以限定包括光电二极管区域和晶体管区域的有源区域。该方法可以包括在光电二极管区域的沟槽侧壁上方和与晶体管区域相邻的区域上形成第一导电型离子注入区域。该方法可以包括在第一导电型离子注入区域和沟槽之间以及在晶体管区域的下部和第一导电型离子注入区域之间形成第二导电型离子注入区域。该方法可以包括形成隔离层，形成栅电极和间隔物，和/或形成光电二极管。

5. 发明授权

US08014915B2 Vehicle management system and method using ECU 有权
标题翻译：车辆管理系统和使用ECU的方法
公开(公告)号：US08014915B2
公开(公告)日：2011-09-06
申请号：US11675061
申请日：2007-02-14
申请人： Jae Wook Jeon , Sang Won Lee , Suk Hyun Seo , Ji Hwan Park
发明人： Jae Wook Jeon , Sang Won Lee , Suk Hyun Seo , Ji Hwan Park
IPC分类号： G01M17/00
CPC分类号： H04L12/64
摘要： Disclosed is a vehicle management system using a wireless network system the system comprising, a WCDMA service unit having a specified ID and obtaining access to a network wirelessly, an ECU system associated with the WCDMA service module for controlling all kinds of interfaces in a vehicle, a service provider for providing various services when the WCDMA service module is connected to the wireless network, and a user having the services through non-wireless or wireless communication inside or outside of the vehicle.
摘要翻译：公开了一种使用无线网络系统的车辆管理系统，该系统包括具有指定ID并获得无线访问的WCDMA服务单元，与WCDMA服务模块相关联的用于控制车辆中的各种接口的ECU系统，用于在WCDMA服务模块连接到无线网络时提供各种服务的服务提供商，以及通过内部或外部的非无线或无线通信具有服务的用户。

6. 发明授权

US11272714B2 Method for preparing functional ingredient-containing kimchi containing Dendropanax morbifera lev. extract 有权
公开(公告)号：US11272714B2
公开(公告)日：2022-03-15
申请号：US16484243
申请日：2017-02-16
申请人： Ji Hwan Park , Ju Yeon Yu
发明人： Ji Hwan Park , Ju Yeon Yu
IPC分类号： A23B7/10 , A23L19/20
摘要： According to a method of manufacturing kimchi of the present invention, there is provided high-quality kimchi which contains Dendropanax morbifera Lev. and one or more functional ingredients selected from among a dandelion, Capsella bursa-pastoris, Kalopanax septemlobus, Cuscuta chinensis Lamarck, and Sambucus williamsii var. coreana Nakai, so that an irritating odor is reduced, freshness is maintained over a long period of time, an improved mouthfeel is ensured, excessive fermentation caused by the occurrence of microorganisms is prevented, and storage stability is improved.

7. 发明申请

US20130004726A1 Light Guide Plate, and Method and Apparatus of Manufacturing Same 审中-公开
标题翻译：导光板及其制造方法和装置
公开(公告)号：US20130004726A1
公开(公告)日：2013-01-03
申请号：US13583855
申请日：2011-01-18
申请人： Doo Jin Park , Ji Hwan Park
发明人： Doo Jin Park , Ji Hwan Park
IPC分类号： B32B3/30 , B29C35/08 , C08J7/04
CPC分类号： B29D11/00663 , B29C33/42 , B29C35/0888 , B29C59/046 , B29C2035/0827 , B32B37/1027 , B32B38/06 , B32B2310/0831 , B32B2333/12 , B32B2551/00 , G02B6/0053 , G02B6/0065 , Y10T428/24612
摘要： The present invention relates to a light guide plate, and a method and apparatus of manufacturing the same. The light guide plate includes; a transparent substrate including an active area and a dummy area defined in the periphery of the active area, wherein a groove for coupling other members is defined in the dummy area; and a pattern layer disposed on one surface of the substrate. The pattern layer is not disposed on the dummy area of the substrate, but disposed on the active area of the substrate. Since the pattern layer is formed on only the active are of the substrate using a spinless process, a material for forming the pattern layer may not be wasted to reduce material costs. Also, since a plurality of grooves are formed in the substrate before the pattern layer is formed on the substrate, conventional limitations, whereby it is difficult to perform a groove forming process due to a pattern layer cured by forming a plurality of grooves after the pattern layer is formed, may be overcome.
摘要翻译：本发明涉及一种导光板及其制造方法和装置。导光板包括：所述透明基板包括有源区域和限定在所述有效区域的周边中的虚设区域，其中用于耦合其它构件的沟槽限定在所述虚拟区域中; 以及设置在基板的一个表面上的图案层。图案层不设置在基板的虚拟区域上，而是设置在基板的有源区域上。由于图案层仅使用无纺工艺形成在基板的有源部分上，所以形成图案层的材料可能不会浪费以降低材料成本。此外，由于在图案层形成在基板上之前在基板中形成多个凹槽，这是常规的限制，由于通过在图案之后形成多个凹槽而使图案层固化而难以进行凹槽形成处理形成层，可以克服。

8. 发明授权

US07883984B2 Method of manufacturing flash memory device 失效
标题翻译：制造闪存设备的方法
公开(公告)号：US07883984B2
公开(公告)日：2011-02-08
申请号：US12620811
申请日：2009-11-18
申请人： Ji-Hwan Park
发明人： Ji-Hwan Park
IPC分类号： H01L21/20 , H01L21/8242 , H01L21/336
CPC分类号： H01L27/11521
摘要： A method of manufacturing a flash memory device may include forming a trench, defining at least a common source region, on a semiconductor substrate, forming a gate poly over the semiconductor substrate, performing an ion implantation process employing a first photoresist pattern and the gate poly as a mask, wherein the ion implantation process forms a source/drain junction on the semiconductor substrate, forming a recess common source region in the trench by using a second photoresist pattern, and performing an ion implantation process on the recess common source region.
摘要翻译：一种制造闪速存储器件的方法可以包括在半导体衬底上形成至少限定公共源极区域的沟槽，在半导体衬底上形成栅极多晶硅，执行使用第一光致抗蚀剂图案的离子注入工艺和栅极聚作为掩模，其中所述离子注入工艺在所述半导体衬底上形成源极/漏极结，通过使用第二光致抗蚀剂图案在所述沟槽中形成凹陷共同源极区域，以及对所述凹部公共源极区域执行离子注入工艺。

9. 发明申请

US20090315087A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20090315087A1
公开(公告)日：2009-12-24
申请号：US12486876
申请日：2009-06-18
申请人： Ji-Hwan Park
发明人： Ji-Hwan Park
IPC分类号： H01L31/112 , H01L31/18
CPC分类号： H01L27/14609 , H01L27/14689
摘要： A method for manufacturing an image sensor includes forming an isolation area in a semiconductor substrate, forming a plurality of gate insulating layers and a plurality of gates over a transistor area of the semiconductor substrate, forming a photodiode over the semiconductor substrate between the gates and the isolation area, forming a nitride layer over the semiconductor substrate such that tensile stress is applied to the transistor area of the semiconductor substrate, forming a floating diffusion layer over the semiconductor substrate between the gates, and removing the nitride layer over the photodiode, and forming an oxide layer over the photodiode.
摘要翻译：一种用于制造图像传感器的方法，包括在半导体衬底中形成隔离区域，在半导体衬底的晶体管区域上形成多个栅极绝缘层和多个栅极，在栅极和栅极之间的半导体衬底上形成光电二极管隔离区域，在半导体衬底上形成氮化物层，使得拉伸应力施加到半导体衬底的晶体管区域，在栅极之间的半导体衬底上形成浮动扩散层，并且去除光电二极管上的氮化物层，并形成在光电二极管上的氧化层。

10. 发明申请

US20090114962A1 Image Sensor and Method for Manufacturing Thereof 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20090114962A1
公开(公告)日：2009-05-07
申请号：US12256514
申请日：2008-10-23
申请人： Ji Hwan Park
发明人： Ji Hwan Park
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14687
摘要： Disclosed are an image sensor and a method for manufacturing the same. The image sensor can include a first pixel including a first photodiode and a first gate; a second pixel adjacent the first pixel and including a second photodiode and a second gate; and a barrier layer between the first photodiode and the second photodiode. The barrier layer can be formed by implanting ions into a semiconductor substrate at a region between adjacent photodiodes. A shallow trench isolation (STI) can be omitted in the regions between adjacent photodiodes by using the ion-implanted barrier layer to isolate the photodiodes from each other.
摘要翻译：公开了一种图像传感器及其制造方法。图像传感器可以包括包括第一光电二极管和第一栅极的第一像素; 与所述第一像素相邻并包括第二光电二极管和第二栅极的第二像素; 以及第一光电二极管和第二光电二极管之间的阻挡层。可以通过在相邻的光电二极管之间的区域将离子注入到半导体衬底中来形成阻挡层。通过使用离子注入的阻挡层将光电二极管彼此隔离，可以在相邻的光电二极管之间的区域中省略浅沟槽隔离（STI）。

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