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1. 发明申请

US20090317641A1 METHODS OF PROCESSING A THERMAL INTERFACE MATERIAL 有权
标题翻译：加热热界面材料的方法
公开(公告)号：US20090317641A1
公开(公告)日：2009-12-24
申请号：US12145364
申请日：2008-06-24
申请人： Lakshmi Supriya , Jessica Weninger , Leonel Arana , Lateef Mustapha
发明人： Lakshmi Supriya , Jessica Weninger , Leonel Arana , Lateef Mustapha
IPC分类号： B32B9/04 , B29C65/02
CPC分类号： F28F7/00 , H01L23/3735 , H01L23/3737 , H01L23/433 , H01L24/30 , H01L24/33 , H01L2224/73253 , H01L2924/01006 , H01L2924/01012 , H01L2924/01033 , H01L2924/01056 , Y10T156/10 , Y10T428/31663
摘要： Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s).
摘要翻译：公开了处理热界面材料以实现热界面材料的容易拾取和放置而不降低完成的半导体封装的热性能的方法。一种方法包括在热界面材料的一个或多个表面上施加非粘合剂层，将热界面材料与一种或多种组分接合，使其间的非粘合剂层相互接触，并施加热量以将非粘合剂层改变为增加热界面材料和界面部件之间的热接触。

2. 发明申请

US20070228111A1 Microelectronic package and method of forming same 审中-公开
标题翻译：微电子封装及其形成方法
公开(公告)号：US20070228111A1
公开(公告)日：2007-10-04
申请号：US11393184
申请日：2006-03-29
申请人： Ganesh Vasudevanpillai , Mukul Renavikar , Jessica Weninger
发明人： Ganesh Vasudevanpillai , Mukul Renavikar , Jessica Weninger
IPC分类号： B23K31/00 , B23K31/02
CPC分类号： B23K1/0016 , H01L24/13 , H01L24/16 , H01L24/81 , H01L2224/81801 , H01L2224/8181
摘要： A method of forming a microelectronic package, a microelectronic package formed according to the method, and a system including the microelectronic package. The method comprises: providing a die-substrate combination including: providing a die having die bumping sites thereon each including a layer comprising a stabilizing element; providing a substrate having substrate bumping sites thereon; before heating, placing a solder on at least one of the die bumping sites and the substrate bumping sites, the solder including a first solder element and a second solder element; and placing the die and the substrate in registration with one another to sandwich the solder therebetween. The method further comprises forming a plurality of joint structures including heating the die-substrate combination to reflow the solder. Each of the joint structures includes: IMC grains comprising the stabilizing element and the first solder element; and solidified solder comprising the first solder element and the second solder element. Preferably, the stabilizing element comprises Au, the first solder element comprises In, and the second solder element comprises Sn.
摘要翻译：一种形成微电子封装的方法，根据该方法形成的微电子封装以及包括微电子封装的系统。该方法包括：提供模具 - 基板组合，包括：提供具有模具凸起位置的模具，每个模具包括包含稳定元件的层; 提供其上具有衬底凸起位置的衬底; 在加热之前，将焊料放置在所述裸片凸起部位和所述基板凸起部位中的至少一个上，所述焊料包括第一焊料元件和第二焊料元件; 并将模具和基板彼此对准以将焊料夹在其间。该方法还包括形成多个接头结构，包括加热模具 - 基底组合以回流焊料。每个接头结构包括：包含稳定元件和第一焊料元件的IMC晶粒; 以及包含第一焊料元件和第二焊料元件的固化焊料。优选地，稳定元件包括Au，第一焊料元件包括In，第二焊料元件包括Sn。

3. 发明申请

US20090004500A1 MULTILAYER PREFORM FOR FAST TRANSIENT LIQUID PHASE BONDING 审中-公开
标题翻译：用于快速瞬态液相接合的多层预取
公开(公告)号：US20090004500A1
公开(公告)日：2009-01-01
申请号：US11768575
申请日：2007-06-26
申请人： Daewoong Suh , Jessica Weninger
发明人： Daewoong Suh , Jessica Weninger
IPC分类号： B32B15/01 , B23K35/02 , B32B37/02
CPC分类号： B23K35/0238 , B23K35/001 , B23K35/262 , B23K2101/40 , B32B15/01 , H01L24/29 , H01L24/83 , H01L2224/2908 , H01L2224/83825 , Y10T29/49904 , Y10T428/12222
摘要： In some embodiments, a multilayer preform for fast transient liquid phase bonding is presented. In this regard, a method is introduced consisting of forming a plurality of first alloy layers, forming a plurality of second alloy layers, wherein the second alloy has a melting temperature that is higher than the melting temperature of the first alloy, and placing the first and second alloy layers together in an alternating sequence such that there is one more layer of the first alloy than of the second alloy and that the top and bottom layers of the formation are of the first alloy. Other embodiments are also disclosed and claimed.
摘要翻译：在一些实施例中，提出了一种用于快速瞬态液相键合的多层预成型件。在这方面，引入一种方法，其包括形成多个第一合金层，形成多个第二合金层，其中第二合金的熔融温度高于第一合金的熔融温度，并且将第一合金层和第二合金层以交替的顺序连在一起，使得第一合金比第二合金多一层，并且地层的顶层和底层是第一合金。还公开并要求保护其他实施例。

4. 发明申请

US20080035703A1 Oxidation resistant solder preform 审中-公开
标题翻译：耐氧化焊料预制件
公开(公告)号：US20080035703A1
公开(公告)日：2008-02-14
申请号：US11502057
申请日：2006-08-09
申请人： Daewoong Suh , Jessica Weninger
发明人： Daewoong Suh , Jessica Weninger
IPC分类号： B23K35/14 , B23K35/12
CPC分类号： B23K35/262 , B23K35/0238 , B23K35/3033 , B23K35/322
摘要： A solder preform includes a solder material, a diffusion barrier disposed adjacent to a surface of the solder material, and an oxidation barrier disposed adjacent to the diffusion barrier wherein the diffusion barrier is interposed between the solder material and the oxidation barrier. The solder preform can be disposed adjacent to a bonding surface of a thermal component, and the solder material heated at least to its melting temperature and then cooled below its melting temperature, bonding the solder material with the bonding surface of the thermal component. A flux-free bonding interface can be maintained between the thermal component and the solder preform.
摘要翻译：焊料预成型体包括焊料材料，邻近焊料材料表面设置的扩散阻挡层，以及与扩散阻挡层相邻设置的氧化屏障，其中扩散阻挡层介于焊料材料和氧化屏障之间。焊料预制件可以设置在热部件的接合表面附近，并且焊料材料至少加热至其熔化温度，然后冷却到其熔融温度以下，将焊料材料与热部件的接合表面粘结。可以在热组件和焊料预制件之间保持无助焊接合界面。

5. 发明授权

US08383459B2 Methods of processing a thermal interface material 有权
标题翻译：处理热界面材料的方法
公开(公告)号：US08383459B2
公开(公告)日：2013-02-26
申请号：US12145364
申请日：2008-06-24
申请人： Lakshmi Supriya , Jessica Weninger , Leonel Arana , Lateef Mustapha
发明人： Lakshmi Supriya , Jessica Weninger , Leonel Arana , Lateef Mustapha
IPC分类号： H01L21/00
CPC分类号： F28F7/00 , H01L23/3735 , H01L23/3737 , H01L23/433 , H01L24/30 , H01L24/33 , H01L2224/73253 , H01L2924/01006 , H01L2924/01012 , H01L2924/01033 , H01L2924/01056 , Y10T156/10 , Y10T428/31663
摘要： Methods are disclosed to process a thermal interface material to achieve easy pick and placement of the thermal interface material without lowering thermal performance of a completed semiconductor package. One method involves applying a non-adhesive layer on one or more surfaces of the thermal interface material, interfacing the thermal interface material with one or more components to interface the non-adhesive layer therebetween, and applying heat to alter the non-adhesive layer to increase thermal contact between the thermal interface material and the interfacing component(s).
摘要翻译：公开了处理热界面材料以实现热界面材料的容易拾取和放置而不降低完成的半导体封装的热性能的方法。一种方法包括在热界面材料的一个或多个表面上施加非粘合剂层，将热界面材料与一种或多种组分接合，使其间的非粘合剂层相互接触，并施加热量以将非粘合剂层改变为增加热界面材料和界面部件之间的热接触。

6. 发明申请

US20080233682A1 METHODS OF FORMING A CORED METALLIC THERMAL INTERFACE MATERIAL AND STRUCTURES FORMED THEREBY 审中-公开
标题翻译：形成金属热界面材料的方法及其形成的结构
公开(公告)号：US20080233682A1
公开(公告)日：2008-09-25
申请号：US11688629
申请日：2007-03-20
申请人： Daewoong Suh , Jessica Weninger
发明人： Daewoong Suh , Jessica Weninger
IPC分类号： H01L21/00
CPC分类号： H01L23/3736 , H01L23/3735 , H01L23/42 , H01L2224/16225 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/73253 , H01L2924/00011 , H01L2924/00014 , H01L2924/00 , H01L2224/0401
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include forming a core portion of a TIM, wherein the core portion comprises a high thermal conductivity and does not comprise indium, and forming an outer portion of the TIM on the core portion.
摘要翻译：描述形成微电子器件的方法和相关结构。这些方法可以包括形成TIM的芯部分，其中芯部分包括高导热性并且不包含铟，并且在芯部分上形成TIM的外部部分。

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