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1. 发明授权

US06512260B2 Metal capacitor in damascene structures 有权
标题翻译：金属电容器在镶嵌结构
公开(公告)号：US06512260B2
公开(公告)日：2003-01-28
申请号：US10107482
申请日：2002-03-28
申请人： Chen-Chiu Hsue , Shyh-Dar Lee , Jen-Hann Tsai
发明人： Chen-Chiu Hsue , Shyh-Dar Lee , Jen-Hann Tsai
IPC分类号： H01L218242
CPC分类号： H01L28/55 , H01L21/76801 , H01L21/76807 , H01L21/76838
摘要： A metal capacitor in damascene structures is provided. A first Cu wire and a second Cu wire are located in a first insulator. A first sealing layer is located on the first and the second Cu wires. A second insulator is located on the first sealing layer. A third insulator is located on the second insulator, and acting as an etch stop layer. A first Cu plug and a second Cu plug are located in the first sealing layer, the second insulator and the third insulator. A capacitor is located on the third insulator and the first Cu plug, the capacitor having an upper electrode, a capacitor dielectric and a bottom electrode with the same pattern each other, wherein the bottom electrode is connected to the first Cu wire through the first Cu plug. A conducting wire is located on the third insulator and the second Cu plug, wherein the conducting wire is connected to the second Cu wire through the second Cu plug. A fourth insulator is located on the conducting wire. A fifth insulator with a flat surface is located on the upper electrode, the fourth insulator and the third insulator. A plurality of dual damascene structures including a third plug, a fourth Cu plug, a third Cu wire and a fourth Cu wire are located in the fifth insulator, wherein an upper electrode of the capacitor is connected to the third Cu wire through the third Cu plug, and the conducting wire is connected to the fourth Cu wire through the fourth Cu plug. A second sealing layer is located on the third and fourth Cu wires.
摘要翻译：提供镶嵌结构中的金属电容器。第一Cu线和第二Cu线位于第一绝缘体中。第一密封层位于第一和第二Cu线上。第二绝缘体位于第一密封层上。第三绝缘体位于第二绝缘体上并用作蚀刻停止层。第一Cu插塞和第二Cu插头位于第一密封层，第二绝缘体和第三绝缘体中。电容器位于第三绝缘体和第一Cu插头上，电容器具有上电极，电容器电介质和具有相同图案的底电极，其中底电极通过第一Cu连接到第一Cu线插头。导线位于第三绝缘体和第二Cu插头上，其中导线通过第二Cu插头连接到第二Cu线。第四绝缘体位于导线上。具有平坦表面的第五绝缘体位于上电极，第四绝缘体和第三绝缘体上。包括第三插头，第四Cu插头，第三Cu线和第四Cu线的多个双镶嵌结构位于第五绝缘体中，其中电容器的上电极通过第三Cu连接到第三Cu线插头，并且导线通过第四Cu插头连接到第四Cu线。第二密封层位于第三和第四铜丝上。

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