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1. 发明授权

US5818364A High bit-rate huffman decoding 失效
标题翻译：高比特率huffman解码
公开(公告)号：US5818364A
公开(公告)日：1998-10-06
申请号：US666964
申请日：1996-06-19
申请人： Jeffrey A. Hintzman , Brian R. Jung
发明人： Jeffrey A. Hintzman , Brian R. Jung
IPC分类号： G06T9/00 , H03M7/00 , H03M7/40 , H04N1/419 , H04N7/26 , H04N7/30
CPC分类号： H04N19/60 , H04N19/13 , H04N19/91
摘要： A high bit rate Huffman decoder is provided for compressed data bit stream. In an exemplary embodiment, JPEG and MPEG data compression is explained. An oversized input data register receives sequential input data words to be decoded. Each new data word is appended to data already in the register by right shifting the new data word by the number of valid data bits in the register. A bitwise logical OR operation is performed to load an operative data register. The operative data register is left-shifted based upon the number of bits in a previous Huffman code word-coefficient pair. The left-most pair of the appropriate size is separated for examination. The separated bit strings are examined as representing the coefficient of the previous code word-coefficient pair and the current code word. The code word is used to access a Huffman lookup table. The lookup table provides the zeroes run length, coefficient size, and code word-coefficient pair length which is used for the next left shift. Header/marker and byte boundary information are separately padded to construct same width words as the input data words. Simultaneous shifting in parallel with the data word examination preserves the relative locations of the header/markers with the data.
摘要翻译：为压缩数据比特流提供了高比特率霍夫曼解码器。在示例性实施例中，解释JPEG和MPEG数据压缩。过大的输入数据寄存器接收要解码的顺序输入数据字。通过将新数据字右移到寄存器中的有效数据位数，每个新的数据字被附加到已经在寄存器中的数据。执行按位逻辑或运算来加载操作数据寄存器。操作数据寄存器基于先前霍夫曼码字系数对中的比特数进行左移。最左边的一对适当的大小被分开检查。分离的比特串被检查为表示先前的代码字 - 系数对和当前代码字的系数。代码字用于访问霍夫曼查询表。查找表提供用于下一个左移位的零运行长度，系数大小和码字系数对长度。标题/标记和字节边界信息被单独填充以构成与输入数据字相同的宽度字。与数据字检查同时移位同时保留标题/标记与数据的相对位置。

2. 发明授权

US5774403A PVT self aligning internal delay line and method of operation 失效
标题翻译： PVT自调心内部延时线及操作方法
公开(公告)号：US5774403A
公开(公告)日：1998-06-30
申请号：US873854
申请日：1997-06-12
申请人： Airell Clark, II , Billy E. Thayer , Daryl E. Anderson , Jeffrey A. Hintzman
发明人： Airell Clark, II , Billy E. Thayer , Daryl E. Anderson , Jeffrey A. Hintzman
IPC分类号： G06F1/06 , G11C7/22 , H03K5/13 , H03K5/135 , H03L7/00 , G11C8/00
CPC分类号： G11C7/22 , H03K5/131 , H03K5/135
摘要： An integrated circuit process, voltage and temperature fluctuation self-aligning internal delay line circuit and method of operation. A PVT related reference signal is compared to a set of reference signals generated from a system voltage. A delay line is varied based upon the comparison results, generating a delayed timing signal related to PVT fluctuations.
摘要翻译：集成电路过程，电压和温度波动自调心内部延迟线电路和操作方法。将PVT相关参考信号与从系统电压产生的一组参考信号进行比较。延迟线基于比较结果而变化，产生与PVT波动相关的延迟定时信号。

3. 发明授权

US08598659B2 Single finger gate transistor 失效
标题翻译：单指栅极晶体管
公开(公告)号：US08598659B2
公开(公告)日：2013-12-03
申请号：US11259335
申请日：2005-10-26
申请人： Chin Dixie Huang , Jeffrey A. Hintzman , Dennis James Schloeman , Hang Liao
发明人： Chin Dixie Huang , Jeffrey A. Hintzman , Dennis James Schloeman , Hang Liao
IPC分类号： H01L29/66
CPC分类号： H01L29/402 , H01L29/0696 , H01L29/42368 , H01L29/4238 , H01L29/66681 , H01L29/7816 , H01L29/7823
摘要： A transistor device includes a lightly doped layer of semiconductor material of a first type and a body region of semiconductor material of a second type. A source region of the first type is formed in the body region, the source region being more doped than the lightly doped layer. A drain region of the first type is formed in the lightly doped layer, the drain region being more doped than the lightly doped layer. A drift region of the lightly doped layer is further provided disposed between the body region and the drain region. Additionally, a gate electrode is provided surrounding the drain region. The gate electrode is partially disposed over a thin oxide and partially over a thick oxide, wherein the gate electrode extended over the thick oxide from the thin oxide controls the electric field in the drift region to increase the avalanche breakdown of the drain region.
摘要翻译：晶体管器件包括第一类型的半导体材料的轻掺杂层和第二类半导体材料的体区。第一类型的源区形成在体区中，源区比轻掺杂层更加掺杂。第一类型的漏极区形成在轻掺杂层中，漏区比轻掺杂层更加掺杂。进一步提供轻体掺杂层的漂移区域，设置在体区和漏区之间。此外，围绕漏极区域设置栅电极。栅电极部分地设置在薄氧化物上并且部分地设置在厚氧化物上，其中从薄氧化物延伸到厚氧化物上的栅极电极控制漂移区域中的电场，以增加漏极区域的雪崩击穿。

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