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    • 4. 发明授权
    • Adjusting lithium oxide concentration in wafers using a two-phase lithium-rich source
    • 使用两相锂离子源调节晶圆中的氧化锂浓度
    • US06652644B1
    • 2003-11-25
    • US10113377
    • 2002-03-29
    • Gregory D. MillerJanos Lazar
    • Gregory D. MillerJanos Lazar
    • C30B100
    • C30B33/00C30B29/30
    • In one embodiment, lithium oxide concentration in wafers is adjusted by placing the wafers in a vessel. Vapor of a lithium oxide source is provided and absorbed by the wafers, thereby adjusting the lithium oxide concentration in the wafers. In another embodiment, a two-phase lithium-rich source is placed between wafers such that space in the process chamber is efficiently utilized. In another embodiment, the wafers to be processed are placed in a section of a process chamber (e.g., process tube). Lithium oxide is introduced on end of the process chamber. Carrier gas is also introduced on that end of the process chamber to carry the lithium oxide into the section of the process chamber where the wafers are located. By adjusting the partial pressure of lithium oxide in the process chamber, the rate at which lithium oxide is absorbed by the wafers is controlled.
    • 在一个实施例中,通过将晶片放置在容器中来调节晶片中的氧化锂浓度。 氧化锂源的蒸气由晶片提供和吸收,从而调节晶片中的氧化锂浓度。 在另一个实施例中,将两相富锂源放置在晶片之间,使得处理室中的空间被有效地利用。 在另一个实施例中,要处理的晶片被放置在处理室(例如,处理管)的一部分中。 在处理室的末端引入氧化锂。 载气也被引入处理室的端部,以将氧化锂运送到处理室的位于晶片的部分。 通过调节处理室中氧化锂的分压,控制氧化锂被晶片吸收的速率。
    • 7. 发明授权
    • Method and apparatus for adjusting lithium oxide concentration in wafers
    • 用于调整晶片中氧化锂浓度的方法和装置
    • US06893498B1
    • 2005-05-17
    • US10113825
    • 2002-03-29
    • Gregory D. MillerLudwig GalambosJanos LazarGabriel Risk
    • Gregory D. MillerLudwig GalambosJanos LazarGabriel Risk
    • C30B29/06C30B31/08
    • C30B31/08C30B29/06
    • In one embodiment, lithium oxide concentration in wafers is adjusted by placing the wafers in a vessel. Vapor of a lithium oxide source is provided and absorbed by the wafers, thereby adjusting the lithium oxide concentration in the wafers. In another embodiment, a two-phase lithium-rich source is placed between wafers such that space in the process chamber is efficiently utilized. In another embodiment, the wafers to be processed are placed in a section of a process chamber (e.g., process tube). Lithium oxide is introduced on end of the process chamber. Carrier gas is also introduced on that end of the process chamber to carry the lithium oxide into the section of the process chamber where the wafers are located. By adjusting the partial pressure of lithium oxide in the process chamber, the rate at which lithium oxide is absorbed by the wafers is controlled.
    • 在一个实施例中,通过将晶片放置在容器中来调节晶片中的氧化锂浓度。 氧化锂源的蒸气由晶片提供和吸收,从而调节晶片中的氧化锂浓度。 在另一个实施例中,将两相富锂源放置在晶片之间,使得处理室中的空间被有效地利用。 在另一个实施例中,要处理的晶片被放置在处理室(例如,处理管)的一部分中。 在处理室的末端引入氧化锂。 载气也被引入处理室的端部,以将氧化锂运送到处理室的位于晶片的部分。 通过调节处理室中氧化锂的分压,控制氧化锂被晶片吸收的速率。