专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5129962A Tacky, no-clean thermally dissipated soldering flux 失效
标题翻译：坚固，无清洁的热耗散助焊剂
公开(公告)号：US5129962A
公开(公告)日：1992-07-14
申请号：US781567
申请日：1991-10-22
申请人： Barbara L. Gutierrez , Janet M. Sickler
发明人： Barbara L. Gutierrez , Janet M. Sickler
IPC分类号： B23K35/36 , H05K3/34
CPC分类号： B23K35/3618 , B23K35/3612 , H05K3/3489
摘要： A no-clean, thermally dissipated soldering flux is shown which includes hydroabietal alcohol as a flux base, an organic activator and an organic diluent. The hydroabietal alcohol provides a tacky medium which holds a precisely aligned chip in place both during placement and reflow. The nature of the formula renders a reducing atmosphere unnecessary. The composition is thermally dissipated during soldering and leaves no undesirable residue which would require a post-cleaning step.

2. 发明授权

US4630356A Method of forming recessed oxide isolation with reduced steepness of the birds' neck 失效
标题翻译：形成凹陷氧化物隔离的方法，具有降低的脖子陡度
公开(公告)号：US4630356A
公开(公告)日：1986-12-23
申请号：US777800
申请日：1985-09-19
申请人： Rosemary Christie , Bao-Tai Hwang , San-Mei Ku , Janet M. Sickler
发明人： Rosemary Christie , Bao-Tai Hwang , San-Mei Ku , Janet M. Sickler
IPC分类号： H01L21/76 , H01L21/306 , H01L21/308 , H01L21/316 , H01L21/762 , H01L21/467 , H01L21/94
CPC分类号： H01L21/7621 , H01L21/3081
摘要： Disclosed is a method of forming in a monocrystalline silicon body an optimum recessed oxide isolation structure with reduced steepness of the bird's neck. Starting from a monocrystalline silicon body, there is formed thereon a layered structure of first silicon dioxide, polycrystalline silicon, second silicon dioxide and silicon nitride, in that order. The layers are patterned to form openings in the structure at the areas where it is desired to form the oxide isolation pattern within the silicon body. The exposed areas of the silicon body are anisotropically reactive ion etched to an initial portion of the desired depth obtaining the corresponding portion of the trench having substantially vertical walls. Then by chemical etching the trench is extended to a final portion of the desired depth obtaining inwardly sloped walls in the final portion. The body is then thermally oxidized until the desired oxide isolation penetrates to the desired depth within the silicon body.
摘要翻译：公开了一种在单晶硅体中形成具有降低的脖子陡度的最佳凹陷氧化物隔离结构的方法。从单晶硅体开始，依次形成第一二氧化硅，多晶硅，第二二氧化硅和氮化硅的分层结构。这些层被图案化以在期望在硅体内形成氧化物隔离图案的区域的结构中形成开口。硅体的暴露区域是各向异性反应离子蚀刻到期望深度的初始部分，获得具有基本垂直壁的沟槽的相应部分。然后通过化学蚀刻将沟槽延伸到所需深度的最后部分，从而获得最终部分中的向内倾斜的壁。然后将身体热氧化直到所需的氧化物隔离渗入硅体内所需的深度。

3. 发明授权

US5127571A Water soluble soldering preflux and method of application 失效
标题翻译：水溶性焊接前驱体及其应用方法
公开(公告)号：US5127571A
公开(公告)日：1992-07-07
申请号：US785725
申请日：1991-10-31
申请人： Barbara L. Gutierrez , Janet M. Sickler
发明人： Barbara L. Gutierrez , Janet M. Sickler
IPC分类号： B23K35/36 , H05K3/28
CPC分类号： H05K3/282 , B23K35/3612 , B23K35/3613 , B23K35/3618
摘要： Water soluble soldering preflux compositions are shown which include gum arabic, modified polysaccharides and other natural resins as a carrier, an oxidation inhibitor and water. The compositions are useful in the assembly of precisely aligned electrical components during multiple step, electronic card assembly techniques. Use of the preflux compositions according to the method of the invention permits a flexible, site-specific method for joining electronic components to a printed circuit board with a fewer number of steps.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式