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1. 发明申请

US20090206265A1 Electron Bombarded Image Sensor Array Device and Its Manufacturing Method 有权
标题翻译：电子轰炸图像传感器阵列器件及其制造方法
公开(公告)号：US20090206265A1
公开(公告)日：2009-08-20
申请号：US11922104
申请日：2006-06-13
申请人： Daniela Georgeta Tomuta , Albert Hendrik Jan Meinen , Gezinus Ruiter , Jan Van Spijker
发明人： Daniela Georgeta Tomuta , Albert Hendrik Jan Meinen , Gezinus Ruiter , Jan Van Spijker
IPC分类号： G01T1/24 , H01L21/00
CPC分类号： H01J31/26 , H01L24/14 , H01L27/14618 , H01L27/14634 , H01L31/0203 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/15174 , H01L2924/15311 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The invention relates to an electron bombarded image sensor array device comprising a vacuum chamber having a photocathode capable of releasing electrons into said vacuum chamber when exposed to light impinging on said photocathode, a photocathode capable of releasing electrons into said vacuum chamber when exposed to light impinging on said photocathode, electric field means for accelerating said released electrons from said photocathode towards an anode spaced apart from said photocathode in a facing relationship to receive an electron image from said photocathode, said anode being constructed as a back-thinned image sensor array having electric connecting pads distributed according to a pattern along the surface area of said sensor facing away from said photocathode, a carrier on which said image sensor array is mounted, said carrier having electric connecting pads distributed according to a pattern to feed electric signals from said image sensor array outside said vacuum chamber and electric connecting means for electrically connecting at least one of said electric connecting pads of said image sensor array with at least one of said electric connecting pads of said carrier.
摘要翻译：本发明涉及一种电子轰击图像传感器阵列装置，其包括具有光电阴极的真空室，该真空室当暴露于入射到所述光电阴极上的光时，能够将电子释放到所述真空室中，当暴露于光入射时，能够将电子释放到所述真空室中的光电阴极在所述光电阴极上，电场装置用于将所述释放的电子从所述光电阴极朝向与所述光电阴极隔开的阳极以面对的关系加速，以接收来自所述光电阴极的电子图像，所述阳极被构造为具有电气的背面薄化图像传感器阵列根据图案沿着所述传感器的表面区域背离所述光电阴极分布的连接焊盘，安装有所述图像传感器阵列的载体，所述载体具有根据图案分布的电连接焊盘，以馈送来自所述图像传感器的电信号阵列外面的真空室a d电连接装置，用于将所述图像传感器阵列的所述电连接焊盘中的至少一个与所述载体的所述电连接焊盘中的至少一个电连接。

2. 发明授权

US08471444B2 Ion barrier membrane for use in a vacuum tube using electron multiplying, an electron multiplying structure for use in a vacuum tube using electron multiplying as well as a vacuum tube using electron multiplying provided with such an electron multiplying structure 有权
标题翻译：用于使用电子倍增的真空管中的离子阻挡膜，用于使用电子倍增的真空管中的电子倍增结构以及使用具有这种电子倍增结构的电子倍增管的真空管
公开(公告)号：US08471444B2
公开(公告)日：2013-06-25
申请号：US12559109
申请日：2009-09-14
申请人： Jan Van Spijker
发明人： Jan Van Spijker
IPC分类号： H01J43/00
CPC分类号： H01J43/246 , Y10T428/249921
摘要： An electron multiplying structure for use in a vacuum tube using electron multiplying comprises an input face to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face to be oriented in a facing relationship with a detection surface of the vacuum tube, as well as an ion barrier membrane for shielding off stray ions. The vacuum tube uses electron multiplying having a photocathode capable of releasing electrons into the vacuum chamber when exposed to light, electric field device for accelerating the released electrons from the photocathode towards an anode spaced apart from the photocathode in a facing relationship, as well as an electron multiplying structure. An ion barrier membrane is used in a vacuum tube and/or an electron multiplying structure. The ion barrier membrane is composed of at least one atomic layer containing graphene.
摘要翻译：使用电子倍增装置的真空管中使用的电子倍增结构包括：与真空管的入口窗面对面地取向的输入面，与真空检测面对置关系的输出面管，以及用于屏蔽杂散离子的离子屏障膜。真空管使用具有光电阴极的电子倍增，当暴露于光时，能够将电子释放到真空室中，电场装置用于将光电阴极释放的电子朝着与光电阴极隔开的阳极以面对关系加速，以及电子倍增结构。在真空管和/或电子倍增结构中使用离子屏障膜。离子阻挡膜由至少一个含有石墨烯的原子层组成。

3. 发明授权

US08269187B2 Electron bombarded image sensor array device and its manufacturing method 有权
标题翻译：电子轰击图像传感器阵列器件及其制造方法
公开(公告)号：US08269187B2
公开(公告)日：2012-09-18
申请号：US11922104
申请日：2006-06-13
申请人： Daniela Georgeta Tomuta , Albert Hendrik Jan Meinen , Gezinus Ruiter , Jan Van Spijker
发明人： Daniela Georgeta Tomuta , Albert Hendrik Jan Meinen , Gezinus Ruiter , Jan Van Spijker
IPC分类号： G01T1/185
CPC分类号： H01J31/26 , H01L24/14 , H01L27/14618 , H01L27/14634 , H01L31/0203 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2924/00014 , H01L2924/15174 , H01L2924/15311 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The invention relates to an electron bombarded image sensor array device comprising a vacuum chamber having a photocathode capable of releasing electrons into said vacuum chamber when exposed to light impinging on said photocathode, a photocathode capable of releasing electrons into said vacuum chamber when exposed to light impinging on said photocathode, electric field means for accelerating said released electrons from said photocathode towards an anode spaced apart from said photocathode in a facing relationship to receive an electron image from said photocathode, said anode being constructed as a back-thinned image sensor array having electric connecting pads distributed according to a pattern along the surface area of said sensor facing away from said photocathode, a carrier on which said image sensor array is mounted, said carrier having electric connecting pads distributed according to a pattern to feed electric signals from said image sensor array outside said vacuum chamber and electric connecting means for electrically connecting at least one of said electric connecting pads of said image sensor array with at least one of said electric connecting pads of said carrier.
摘要翻译：本发明涉及一种电子轰击图像传感器阵列装置，其包括具有光电阴极的真空室，该真空室当暴露于入射到所述光电阴极上的光时，能够将电子释放到所述真空室中，当暴露于光入射时，能够将电子释放到所述真空室中的光电阴极在所述光电阴极上，电场装置用于将所述释放的电子从所述光电阴极朝向与所述光电阴极隔开的阳极以面对的关系加速，以接收来自所述光电阴极的电子图像，所述阳极被构造为具有电气的背面薄化图像传感器阵列根据图案沿着所述传感器的表面区域背离所述光电阴极分布的连接焊盘，安装有所述图像传感器阵列的载体，所述载体具有根据图案分布的电连接焊盘，以馈送来自所述图像传感器的电信号阵列外面的真空室a d电连接装置，用于将所述图像传感器阵列的所述电连接焊盘中的至少一个与所述载体的所述电连接焊盘中的至少一个电连接。

4. 发明申请

US20100066245A1 ION BARRIER MEMBRANE FOR USE IN A VACUUM TUBE USING ELECTRON MULTIPLYING, AN ELECTRON MULTIPLYING STRUCTURE FOR USE IN A VACUUM TUBE USING ELECTRON MULTIPLYING AS WELL AS A VACUUM TUBE USING ELECTRON MULTIPLYING PROVIDED WITH SUCH AN ELECTRON MULTIPLYING STRUCTURE 有权
标题翻译：在使用电子扩散的真空管中使用的离子膜膜，用于使用电子扩散的真空管中的电子扩散结构，作为使用通过电子扩散提供的真空管进行电子扩散，具有这种电子扩散结构
公开(公告)号：US20100066245A1
公开(公告)日：2010-03-18
申请号：US12559109
申请日：2009-09-14
申请人： Jan VAN SPIJKER
发明人： Jan VAN SPIJKER
IPC分类号： H01J43/06 , B32B3/26
CPC分类号： H01J43/246 , Y10T428/249921
摘要： The invention relates to an electron multiplying structure for use in a vacuum tube using electron multiplying, the electron multiplying structure comprising an input face intended to be oriented in a facing relationship with an entrance window of the vacuum tube, an output face intended to be oriented in a facing relationship with a detection surface of the vacuum tube, as well as an ion barrier membrane for shielding off stray ions.The invention also relates to an vacuum tube using electron multiplying having a photocathode capable of releasing electrons into said vacuum chamber when exposed to light, electric field means for accelerating said released electrons from said photocathode towards an anode spaced apart from said photocathode in a facing relationship, as well as an electron multiplying structure according to the invention disposed in said vacuum chamber between said photocathode and said anode.The invention also relates to an ion barrier membrane for use in a vacuum tube and/or an electron multiplying structure according to the invention.It is an object of the invention is to provide an improved electron multiplying structure having an improved performance in term of shielding capabilities against stray ions and reduced loss of emitted electrons. For this purpose, the electron multiplying structure according to the invention is characterized in that said ion barrier membrane is composed of at least one atomic layer containing graphene.
摘要翻译：本发明涉及一种用于使用电子倍增的真空管中的电子倍增结构，该电子倍增结构包括一个输入面，该输入面旨在以与真空管的入口窗面对面的方式定向，与真空管的检测表面的面对关系以及用于屏蔽杂散离子的离子屏障膜。本发明还涉及使用电子倍增的真空管，其具有能够在暴露于光时将电子释放到所述真空室中的光电阴极，用于将所述释放的电子从所述光电阴极朝向与所述光电阴极隔开的阳极以面对关系加速以及设置在所述真空室中的根据本发明的电子倍增结构，位于所述光电阴极和所述阳极之间。本发明还涉及用于根据本发明的真空管和/或电子倍增结构中的离子阻挡膜。本发明的目的是提供一种改进的电子倍增结构，其具有针对杂散离子的屏蔽能力改善的性能，并减少发射电子的损失。为此，根据本发明的电子倍增结构的特征在于，所述离子阻挡膜由至少一个含有石墨烯的原子层组成。

5. 发明申请

US20090045325A1 Electron bombarded image sensor array device as well as such an image sensor array 审中-公开
标题翻译：电子轰击图像传感器阵列器件以及这样的图像传感器阵列
公开(公告)号：US20090045325A1
公开(公告)日：2009-02-19
申请号：US11922103
申请日：2006-06-13
申请人： Daniela Georgeta Tomuta , Albert Hendrik Jan Meinen , Gezinus Ruiter , Jan Van Spijker
发明人： Daniela Georgeta Tomuta , Albert Hendrik Jan Meinen , Gezinus Ruiter , Jan Van Spijker
IPC分类号： H01J40/14
CPC分类号： H01L27/14601 , H01J31/26 , H01J31/49 , H01L27/14618 , H01L27/14634 , H01L27/1464 , H01L2924/0002 , H01L2924/00
摘要： The invention relates to an electron bombarded image sensor array device comprising a vacuum chamber having a photocathode capable of releasing electrons into said vacuum chamber when exposed to electromagnetic radiation impinging on said photocathode, electric field means for accelerating said released electrons from said photocathode towards an anode spaced apart from said photocathode in a facing relationship to receive an electron image from said photocathode, said anode being constructed as an back thinned image sensor array having electric connecting pads and being mounted to a carrier using mounting means, said carrier having electric connecting pads to feed electric signals from said image sensor array finally outside said vacuum chamber. The invention also relates to an image sensor array to be used in such a device.
摘要翻译：本发明涉及一种电子轰击图像传感器阵列装置，其包括具有光电阴极的真空室，该真空室能够在暴露于入射到所述光电阴极上的电磁辐射时将电子释放到所述真空室中，用于将所述释放的电子从所述光电阴极加速至阳极的电场装置与所述光电阴极间隔开以从所述光电阴极接收电子图像，所述阳极被构造为具有电连接焊盘并且使用安装装置安装到载体的背部薄化图像传感器阵列，所述载体具有电连接焊盘将来自所述图像传感器阵列的电信号最后馈送到所述真空室外。本发明还涉及在这种装置中使用的图像传感器阵列。

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