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1. 发明申请

US20110228444A1 LOAD SYSTEM FOR AN MCAP ENERGY STORAGE MODULE 失效
标题翻译：用于MCAP能量存储模块的负载系统
公开(公告)号：US20110228444A1
公开(公告)日：2011-09-22
申请号：US12726890
申请日：2010-03-18
申请人： James Chyi LAI , Kai Chun Fong
发明人： James Chyi LAI , Kai Chun Fong
IPC分类号： H01G4/38
CPC分类号： H01G9/26 , H01G2/106 , H01G4/38 , H01G11/10 , Y02E60/13
摘要： This invention discloses a load system for loading an Mcap energy storage module to an apparatus, comprising: a storage unit and a load unit. The storage unit further comprises: a first housing part and a seal for sealing the first housing part. The first housing part includes four side walls, a bottom wall and a first opening. A plurality of Mcap cell are disposed in the first housing part through the first opening. A first electrode formed in a side wall. A second electrode formed in another side wall facing the first side wall. The load unit comprises a second housing part and a seal for sealing the second housing part. The storage unit is loaded into the second housing part through the second opening.
摘要翻译：本发明公开了一种用于将Mcap能量存储模块加载到设备的负载系统，包括：存储单元和负载单元。存储单元还包括：第一壳体部分和用于密封第一壳体部分的密封件。第一壳体部分包括四个侧壁，底壁和第一开口。多个Mcap电池通过第一开口设置在第一壳体部分中。形成在侧壁中的第一电极。形成在面向第一侧壁的另一个侧壁中的第二电极。负载单元包括第二壳体部分和用于密封第二壳体部分的密封件。存储单元通过第二开口装入第二壳体部分。

2. 发明授权

US07847586B2 Integrate circuit chip with magnetic devices 有权
标题翻译：集成电路芯片与磁性器件
公开(公告)号：US07847586B2
公开(公告)日：2010-12-07
申请号：US11841193
申请日：2007-08-20
申请人： Tom Allen Agan , James Chyi Lai
发明人： Tom Allen Agan , James Chyi Lai
IPC分类号： H03K19/173 , H01L25/00
CPC分类号： H03K19/168 , G11C11/15 , G11C11/16
摘要： A logic gate array is provided. The logic gate comprises a silicon substrate, a first logic gate layer on top of the silicon substrate, a second logic gate layer on top of the first logic gate layer, and a routing layer between the first and second logic gate layers for routing magnetic gates in the first and second logic gate layers, wherein the first logic gate layer, the second logic gate layer, and the routing layer are electrically connected by vias.
摘要翻译：提供逻辑门阵列。逻辑门包括硅衬底，在硅衬底的顶部上的第一逻辑门层，在第一逻辑门层顶部的第二逻辑门层，以及用于布线磁栅的第一和第二逻辑门层之间的布线层在第一和第二逻辑门层中，其中第一逻辑门层，第二逻辑门层和布线层通过通孔电连接。

3. 发明授权

US07821771B2 Apparatus for storing electrical energy 有权
标题翻译：用于存储电能的装置
公开(公告)号：US07821771B2
公开(公告)日：2010-10-26
申请号：US12101309
申请日：2008-04-11
申请人： James Chyi Lai
发明人： James Chyi Lai
IPC分类号： H01G9/00
CPC分类号： H01G7/00 , H01G7/06 , H01L28/84
摘要： An apparatus for storing electrical energy is provided. The apparatus includes a first magnetic layer, a second magnetic layer, and a dielectric layer. The first magnetic layer has a first surface with saw tooth roughness; the second magnetic layer has a second surface with saw tooth roughness; and the dielectric layer is configured between the first magnetic layer and the second magnetic layer. The dielectric layer is arranged to store electrical energy; the first magnetic layer and the second magnetic layer are arranged to prevent electrical energy leakage; and the saw tooth roughness on the first surface and the second surface is designed to increase the capacitance of the apparatus.
摘要翻译：提供一种用于存储电能的装置。该装置包括第一磁性层，第二磁性层和介电层。第一磁性层具有锯齿粗糙度的第一表面; 第二磁性层具有锯齿粗糙度的第二表面; 并且介电层配置在第一磁性层和第二磁性层之间。电介质层被布置成存储电能; 布置第一磁性层和第二磁性层以防止电能泄漏; 并且第一表面和第二表面上的锯齿粗糙度被设计成增加装置的电容。

4. 发明授权

US07807492B2 Magnetoresistive random access memory with improved layout design and process thereof 有权
标题翻译：具有改进的布局设计及其工艺的磁阻随机存取存储器
公开(公告)号：US07807492B2
公开(公告)日：2010-10-05
申请号：US11533126
申请日：2006-09-19
申请人： Vicki Wilson , Guoqing Zhan , James Chyi Lai
发明人： Vicki Wilson , Guoqing Zhan , James Chyi Lai
IPC分类号： H01L21/00
CPC分类号： H01L27/222
摘要： A MRAM memory and process thereof is described. A GMR magnetic layer is patterned to form a memory bit layer and an intermediate conductive layer. The intermediate conductive layer is disposed between two conductive layers such that shallow metal plugs can be utilized to interconnect the intermediate conductive layer and the conductive layers. Thus, a conventional deep tungsten plug process, interconnecting two conductive layers, is eliminated.
摘要翻译：描述MRAM存储器及其处理。图案化GMR磁性层以形成记忆位层和中间导电层。中间导电层设置在两个导电层之间，使得浅金属插塞可用于互连中间导电层和导电层。因此，消除了互连两个导电层的常规深钨塞工艺。

5. 发明申请

US20100194331A1 ELECTRICAL DEVICE HAVING A POWER SOURCE WITH A MAGNETIC CAPACITOR AS AN ENERGY STORAGE DEVICE 审中-公开
标题翻译：具有作为能量存储装置的磁电容器的电源的电气装置
公开(公告)号：US20100194331A1
公开(公告)日：2010-08-05
申请号：US12366264
申请日：2009-02-05
申请人： James Chyi LAI , Kai Chun FONG
发明人： James Chyi LAI , Kai Chun FONG
IPC分类号： H02J7/00 , H05K7/00
CPC分类号： H01L28/60 , H01G4/008 , H01L23/58 , H01L23/642 , H01L23/66 , H01L24/48 , H01L25/0657 , H01L28/40 , H01L2223/6677 , H01L2224/04042 , H01L2224/16 , H01L2224/32145 , H01L2224/48227 , H01L2225/0651 , H01L2924/00011 , H01L2924/00014 , H01L2924/14 , H01L2924/15311 , H01L2924/19041 , H02S40/38 , H01L2924/00 , H01L2224/0401 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention discloses an electrical device. The electrical device comprises an integrated circuit chip with a positive terminal and a negative terminal, wherein the integrated circuit chip has an energy management function; and a magnetic capacitor connecting with the integrated circuit chip, the magnetic capacitor stores electrical power and provides the electrical power to the integrated circuit chip, wherein the magnetic capacitor comprises: a first magnetic section connects with the positive terminal; a second magnetic section connects with the negative terminal; and a dielectric section configured between the first magnetic section and the second magnetic section; wherein the dielectric section is arranged to store the electrical power.
摘要翻译：本发明公开了一种电气装置。电气装置包括具有正端子和负极端子的集成电路芯片，其中集成电路芯片具有能量管理功能; 以及与所述集成电路芯片连接的磁电容器，所述磁电容器存储电力并向所述集成电路芯片提供电力，其中所述磁电容器包括：与所述正极端子连接的第一磁性部分; 第二磁区与负极端子连接; 以及介电部，其构造在所述第一磁性部和所述第二磁性部之间。其中所述电介质部分被布置成存储所述电力。

6. 发明申请

US20100193906A1 Integrated Circuit Package for Magnetic Capacitor 审中-公开
标题翻译：磁电容器集成电路封装
公开(公告)号：US20100193906A1
公开(公告)日：2010-08-05
申请号：US12365986
申请日：2009-02-05
申请人： James Chyi Lai , Kai Chun Fong
发明人： James Chyi Lai , Kai Chun Fong
IPC分类号： H01L27/06
CPC分类号： H01L23/58 , H01G2/06 , H01L24/48 , H01L25/16 , H01L2224/48227 , H01L2924/00014 , H01L2924/01019 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19104 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： An integrated circuit package for magnetic capacitor including a substrate, an integrated circuit and a magnetic capacitor unit is disclosed. The substrate has a first surface and an opposite second surface. The integrated circuit is connected to the second surface of the substrate. The magnetic capacitor unit has a positive terminal and a negative terminal connected to the substrate.
摘要翻译：公开了一种用于包括衬底，集成电路和磁电容器单元的磁电容器的集成电路封装。衬底具有第一表面和相对的第二表面。集成电路连接到基板的第二表面。磁性电容器单元具有连接到基板的正极端子和负极端子。

7. 发明授权

US07745893B2 Magnetic transistor structure 有权
标题翻译：磁晶体管结构
公开(公告)号：US07745893B2
公开(公告)日：2010-06-29
申请号：US11539284
申请日：2006-10-06
申请人： James Chyi Lai , Tom Allen Agan
发明人： James Chyi Lai , Tom Allen Agan
IPC分类号： H01L29/78
CPC分类号： H01F10/325 , B82Y25/00 , H01F10/3268 , H01L43/08
摘要： A magnetic transistor includes a first magnetic section, a second magnetic section, a conductive section, a first metal terminal, and a second metal terminal. The conductive section is disposed between and is in direct contact with both the first and second magnetic section. The first metal terminal is disposed on one end of an opposite surface to the conductive section of the first magnetic section. The second metal terminal is disposed on one end approximately diagonal to the first metal terminal on an opposite surface to the conductive section of the second magnetic section. While the magnetic transistor structure is turned on, a current flows through the first magnetic section and the second magnetic section via the conductive section.
摘要翻译：磁性晶体管包括第一磁性部分，第二磁性部分，导电部分，第一金属端子和第二金属端子。导电部分设置在第一和第二磁性部分之间并且与第一和第二磁性部分直接接触。第一金属端子设置在与第一磁性部分的导电部分相反的表面的一端。第二金属端子设置在与第二磁性部分的导电部分相反的表面上与第一金属端子大致对角的一端上。当磁晶体管结构导通时，电流经由导电部分流过第一磁性部分和第二磁性部分。

8. 发明申请

US20090257150A1 Apparatus for Storing Electrical Energy 有权
标题翻译：储存电能的装置
公开(公告)号：US20090257150A1
公开(公告)日：2009-10-15
申请号：US12101309
申请日：2008-04-11
申请人： James Chyi Lai
发明人： James Chyi Lai
IPC分类号： G11B5/33
CPC分类号： H01G7/00 , H01G7/06 , H01L28/84
摘要： An apparatus for storing electrical energy is provided. The apparatus includes a first magnetic layer, a second magnetic layer, and a dielectric layer. The first magnetic layer has a first surface with saw tooth roughness; the second magnetic layer has a second surface with saw tooth roughness; and the dielectric layer is configured between the first magnetic layer and the second magnetic layer. The dielectric layer is arranged to store electrical energy; the first magnetic layer and the second magnetic layer are arranged to prevent electrical energy leakage; and the saw tooth roughness on the first surface and the second surface is designed to increase the capacitance of the apparatus.
摘要翻译：提供一种用于存储电能的装置。该装置包括第一磁性层，第二磁性层和介电层。第一磁性层具有锯齿粗糙度的第一表面; 第二磁性层具有锯齿粗糙度的第二表面; 并且介电层配置在第一磁性层和第二磁性层之间。电介质层被布置成存储电能; 布置第一磁性层和第二磁性层以防止电能泄漏; 并且第一表面和第二表面上的锯齿粗糙度被设计成增加装置的电容。

9. 发明申请

US20090051386A1 Integrate Circuit Chip with Magnetic Devices 有权
标题翻译：集成电路芯片与磁性器件
公开(公告)号：US20090051386A1
公开(公告)日：2009-02-26
申请号：US11841193
申请日：2007-08-20
申请人： Tom Allen Agan , James Chyi Lai
发明人： Tom Allen Agan , James Chyi Lai
IPC分类号： H03K19/173
CPC分类号： H03K19/168 , G11C11/15 , G11C11/16
摘要： A logic gate array is provided. The logic gate comprises a silicon substrate, a first logic gate layer on top of the silicon substrate, a second logic gate layer on top of the first logic gate layer, and a routing layer between the first and second logic gate layers for routing magnetic gates in the first and second logic gate layers, wherein the first logic gate layer, the second logic gate layer, and the routing layer are electrically connected by vias.
摘要翻译：提供逻辑门阵列。逻辑门包括硅衬底，在硅衬底的顶部上的第一逻辑门层，在第一逻辑门层顶部的第二逻辑门层，以及用于布线磁栅的第一和第二逻辑门层之间的布线层在第一和第二逻辑门层中，其中第一逻辑门层，第二逻辑门层和布线层通过通孔电连接。

10. 发明授权

US07436218B2 Magnetic AND/NOR circuit 失效
标题翻译：磁AND / NOR电路
公开(公告)号：US07436218B2
公开(公告)日：2008-10-14
申请号：US11549337
申请日：2006-10-13
申请人： Tom Allen Agan , James Chyi Lai
发明人： Tom Allen Agan , James Chyi Lai
IPC分类号： H03K19/20
CPC分类号： H03K19/18
摘要： A magnetic AND/NOR circuit has a first, a second, a third, and a fourth magnetic transistor. These four magnetic transistors as ordinary transistors that can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The ‘AND’ and ‘NOR’ logic functions of the binary system can be implemented by the control of these metal devices.
摘要翻译：磁AND / NOR电路具有第一，第二，第三和第四磁性晶体管。这四个磁性晶体管是通过分别设置在磁性晶体管周围的几个金属器件的控制而导通或截止的普通晶体管。二进制系统的“AND”和“NOR”逻辑功能可以通过这些金属器件的控制来实现。

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