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1. 发明授权

US07902046B2 Thin buffer layers for SiGe growth on mismatched substrates 有权
标题翻译：用于SiGe在不匹配衬底上生长的薄缓冲层
公开(公告)号：US07902046B2
公开(公告)日：2011-03-08
申请号：US11524499
申请日：2006-09-19
申请人： Yu-Hsuan Kuo , James S. Harris, Jr.
发明人： Yu-Hsuan Kuo , James S. Harris, Jr.
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： C30B33/02 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532
摘要： Growth of SiGe on a significantly lattice mismatched substrate (e.g., Si) is provided by depositing a SiGe buffer layer at a growth temperature, then annealing the resulting structure at a temperature higher than the growth temperature. Additional buffer layers can be included following the same steps. The SiGe buffer is significantly lattice mismatched with respect to the substrate, and is preferably substantially lattice matched with a SiGe device to be grown on top of the buffer. The resulting buffer structure is relatively thin and provides low defect density, and low surface roughness. Disadvantages of thick graded buffer layers, such as high cost, high surface roughness, mechanical fragility, and CTE mismatch, are thereby avoided.
摘要翻译：通过在生长温度下沉积SiGe缓冲层，然后在高于生长温度的温度下对所得到的结构进行退火来提供SiGe在显着晶格错配衬底（例如Si）上的生长。可以按照相同的步骤包括附加的缓冲层。 SiGe缓冲液相对于衬底显着地晶格失配，并且优选地与要在缓冲器顶部生长的SiGe器件基本上晶格匹配。得到的缓冲结构相对较薄，提供低缺陷密度和低表面粗糙度。从而避免了诸如高成本，高表面粗糙度，机械脆性和CTE不匹配等厚梯度缓冲层的缺点。

2. 发明授权

US07645626B2 Multiple GaInNAs quantum wells for high power applications 有权
标题翻译：用于大功率应用的多个GaInNAs量子阱
公开(公告)号：US07645626B2
公开(公告)日：2010-01-12
申请号：US11027436
申请日：2004-12-30
申请人： Wonill Ha , Vincent Gambin , James S. Harris
发明人： Wonill Ha , Vincent Gambin , James S. Harris
IPC分类号： H01L21/00
CPC分类号： H01S5/18305 , B82Y20/00 , H01S5/3201 , H01S5/3211 , H01S5/32366 , H01S5/34306 , H01S2302/00
摘要： In connection with an optical-electronic semiconductor device, improved photoluminescent output is provided at wavelengths approaching and beyond 1.3 μm. According to one aspect, a multiple quantum well strain compensated structure is formed using a GaInNAs-based quantum well laser diode with GaNAs-based barrier layers. By growing tensile-strained GaNAs barrier layers, a larger active region with multiple quantum wells can be formed increasing the optical gain of the device. In example implementations, both edge emitting laser devices and vertical cavity surface emitting laser (VCSEL) devices can be grown with at least several quantum wells, for example, nine quantum wells, and with room temperature emission approaching and beyond 1.3 μm.
摘要翻译：关于光电子半导体器件，在接近和超过1.3μm的波长处提供改进的光致发光输出。根据一个方面，使用具有基于GaNA的阻挡层的基于GaInNA的量子阱激光二极管形成多量子阱应变补偿结构。通过生长拉应变GaNAs势垒层，可以形成具有多个量子阱的较大有源区域，从而增加器件的光学增益。在示例实现中，边缘发射激光器件和垂直腔表面发射激光器（VCSEL）器件可以用至少几个量子阱，例如九个量子阱，并且室温发射接近并超过1.3μm而生长。

3. 发明授权

US07515777B2 Silicon-based Ge/SiGe optical interconnects 失效
标题翻译：基于硅的Ge / SiGe光学互连
公开(公告)号：US07515777B2
公开(公告)日：2009-04-07
申请号：US11524505
申请日：2006-09-19
申请人： Yu-Hsuan Kuo , James S. Harris, Jr. , David A. B. Miller
发明人： Yu-Hsuan Kuo , James S. Harris, Jr. , David A. B. Miller
IPC分类号： G02F1/035 , G02F1/295 , G02F1/017 , G02B6/12
CPC分类号： G02F1/017 , B82Y20/00 , G02B6/12004 , G02B2006/12142 , G02F1/01708 , G02F2001/01766 , G02F2201/124 , G02F2203/02 , G02F2203/023 , G02F2203/026 , H01L21/02381 , H01L21/0245 , H01L21/02507 , H01L21/02532 , H01L21/0262 , H01L29/155 , H01L29/165 , H01L31/035236 , H01L31/035254 , H01L31/1037 , H01L31/105
摘要： SiGe quantum wells where the well material has a lowest conduction band energy minimum at k=0 (the Γ point of the first Brillouin zone) are provided. Quantum well structures that satisfy this condition have “Kane-like” bands at and near k=0 which can provide physical effects useful for various device applications, especially optical modulators. In the Si1-xGex material system, this condition on the band structure is satisfied for x greater than about 0.7. The quantum well barrier composition may or may not have Kane-like bands. Optical modulators and/or detectors according to the invention are suitable for inclusion in waveguide-based optical interconnects. Such interconnects can be on-chip interconnects or chip to chip interconnects.
摘要翻译： SiGe量子阱，其中阱材料在k = 0处具有最低导带能量最小值（第一布里渊区域的伽马点）。满足该条件的量子阱结构在k = 0附近具有“Kane样”带，其可以提供对各种器件应用，特别是光学调制器有用的物理效应。在Si1-xGex材料体系中，对于大于约0.7的x，满足条带结构条件。量子阱屏障组合物可以具有或不具有凯恩样条带。根据本发明的光调制器和/或检测器适用于纳入基于波导的光学互连。这种互连可以是片上互连或芯片到芯片互连。

4. 发明授权

US06903364B1 Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication 失效
标题翻译：使用具有降低的相分离的III族氮化物材料体系和制造方法的半导体结构
公开(公告)号：US06903364B1
公开(公告)日：2005-06-07
申请号：US09442077
申请日：1999-11-16
申请人： Toru Takayama , Takaaki Baba , James S. Harris, Jr.
发明人： Toru Takayama , Takaaki Baba , James S. Harris, Jr.
IPC分类号： H01L29/201 , H01L31/103 , H01L33/32 , H01S5/323 , H01S5/343 , H01L33/00
CPC分类号： H01L29/201 , B82Y20/00 , H01L31/1035 , H01L33/32 , H01S5/22 , H01S5/32 , H01S5/32341 , H01S5/34333 , H01S2304/00
摘要： Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BlnGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BlnGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BlnGaAlN material system of an opposite conduction type formed substantially without phase separation.
摘要翻译：公开了用于半导体结构（包括激光二极管，晶体管和光电检测器）的III族 - 氮化物四元和五元材料体系和方法，其减少或消除相分离并提供增加的发射效率。在示例性实施例中，半导体结构包括使用基本上不相分离形成的第一导电类型的BlnGaAlN材料体系的第一三元或四元或五元层材料层，以及基本上不相分离的BlnGaAlN材料体系的四元或五元素材料活性层，以及使用基本上不相分离形成的相反导电类型的BlnGaAlN材料系统的第三三元，四元或五元素材料层。

5. 发明授权

US06798809B1 GaInNAsSb quantum well semiconductor devices 有权
标题翻译： GaInNAsSb量子阱半导体器件
公开(公告)号：US06798809B1
公开(公告)日：2004-09-28
申请号：US10196077
申请日：2002-07-16
申请人： Vincent Gambin , Wonill Ha , James S. Harris
发明人： Vincent Gambin , Wonill Ha , James S. Harris
IPC分类号： H01S500
CPC分类号： H01S5/18305 , B82Y20/00 , H01S5/3201 , H01S5/3211 , H01S5/32366 , H01S5/34306 , H01S2302/00
摘要： In connection with an optical-electronic semiconductor device, improved photoluminescent output is provided at wavelengths beyond 1.3 m. According to one aspect, Sb is used in, e.g. the active region of a GaInNAs-based quantum well laser diode with GaNAs-based barrier layers. Adding a small amount of Sb increases photoluminescence of the device while increasing the wavelength. Sb is used both as a surfactant, improving N and In incorporation into the active region, and an alloy constituent for red-shifting the wavelength of the device. In example implementations, both edge emitting laser devices and vertical cavity surface emitting laser (VCSEL) devices can be grown with room temperature emission from 1.3 to 1.6 &mgr;m.
摘要翻译：结合光电子半导体器件，在超过1.3μm的波长处提供改进的光致发光输出。根据一个方面，Sb用于例如具有GaNAs的势垒层的基于GaInNA的量子阱激光二极管的有源区。添加少量的Sb会增加器件的光致发光，同时增加波长。 Sb都用作表面活性剂，改善N和In结合到有源区中，以及用于红移器件的波长的合金成分。在示例性实现中，边缘发射激光器件和垂直腔表面发射激光器（VCSEL）器件可以在1.3至1.6μm的室温发射下生长。

6. 发明授权

US06653706B1 Low temperature grown optical detector 失效
标题翻译：低温生长光检测器
公开(公告)号：US06653706B1
公开(公告)日：2003-11-25
申请号：US09567179
申请日：2000-05-08
申请人： David A. B. Miller , James S. Harris, Jr.
发明人： David A. B. Miller , James S. Harris, Jr.
IPC分类号： H01C3100
CPC分类号： H01L31/1852 , H01L31/09 , H01L31/1085 , Y02E10/544
摘要： A high efficiency optical interconnect (OI) deposited directly on a silicon based IC by a low temperature process that utilizes a heterogeneous crystalline structure of a III-V compound material to convert light pulses into electrical signals. The high efficiency is established by pulsing the light beams with a shorter duration than the life time of the generated carriers and by reducing the structural volume and consequently the internal capacitance of the III-V compound to a functional height of approximately 1 micron. The analog MSM characteristic of the OI is bypassed by differential two-beam signal processing, wherein the intensity difference of two synchronous light beams is transformed in two parallel OI's into two electrical signals that compensate in a central node. The resulting polarity in the node switches either a PMOS or a NMOS transistor, which connect either a positive or negative voltage to the output node.
摘要翻译：通过利用III-V复合材料的异质晶体结构的低温工艺将直接沉积在硅基IC上的高效光学互连（OI）将光脉冲转换成电信号。通过以比产生的载流子的寿命短的持续时间脉冲光束和通过将III-V族化合物的内部电容降低到大约1微米的功能高度来建立高效率。 OI的模拟MSM特性被差分双波束信号处理旁路，其中两个同步光束的强度差在两个并行OI中变换成两个电信号，在中心节点进行补偿。在节点中产生的极性切换PMOS或NMOS晶体管，其将正电压或负电压连接到输出节点。

7. 发明授权

US06380531B1 Wavelength tunable narrow linewidth resonant cavity light detectors 失效
标题翻译：波长可调窄线宽谐振腔光检测器
公开(公告)号：US06380531B1
公开(公告)日：2002-04-30
申请号：US09451470
申请日：1999-11-30
申请人： Fred Sugihwo , James S. Harris, Jr.
发明人： Fred Sugihwo , James S. Harris, Jr.
IPC分类号： H01L3100
CPC分类号： B82Y20/00 , G01J3/02 , G01J3/0256 , G01J3/26 , G02B26/001 , G02B26/02 , H01L31/02325 , H01L31/035236 , H01L31/101
摘要： A light detector comprising a photodetector disposed within an etalon or microcavity. The light detector is sensitive to light having a wavelength resonant with the etalon. Preferably, the etalon is a solid state microcavity having distributed bragg reflectors. The photodetector may be a photodiode, phototransistor or the like. The etalon has a front reflector with reflectivity Rf and a back reflector with reflectivity Rb. The photodetector has a double-pass absorption of A. In the present invention, Rf, Rb, and A are selected such that Rf=Rb(1−A). The combination of the back reflector and absorbing photodetector is indistinguishable from a single reflector of reflectivity Rf. Therefore, the light detector behaves like an etalon with matched reflectors. Preferably, Rf is greater than 0.95 and Rb is greater than 0.98. The photodetector can have a relatively thin absorption layer, thereby providing high speed capability. Even with a low absorption, the photodetector provides high quantum efficiency since it is within the etalon. Preferably, the front reflector is movable such that an etalon cavity length is adjustable. This provides for adjustment of the wavelength at which the light detector is sensitive.
摘要翻译：一种光检测器，包括设置在标准具或微腔内的光电检测器。光检测器对具有与标准具共振的波长的光敏感。优选地，标准具是具有分布式布拉格反射器的固态微腔。光电检测器可以是光电二极管，光电晶体管等。标准具具有反射率为Rf的前反射器和具有反射率Rb的后反射器。光电检测器具有A的双程吸收。在本发明中，选择Rf，Rb和A使得Rf = Rb（1-A）。背反射器和吸收光电探测器的组合与反射率Rf的单个反射器无法区分。因此，光检测器的行为就像具有匹配反射器的标准具。优选地，Rf大于0.95，Rb大于0.98。光电检测器可以具有相对较薄的吸收层，从而提供高速能力。即使具有低吸收，光电探测器也提供高量子效率，因为它在标准具内。优选地，前反射器是可移动的，使得标准具腔长度可调。这提供了光检测器敏感的波长的调整。

8. 发明授权

US6111643A Apparatus, system and method for determining wear of an article 失效
公开(公告)号：US6111643A
公开(公告)日：2000-08-29
申请号：US959610
申请日：1997-10-28
申请人： Frederick M. Discenzo , James S. Harris
发明人： Frederick M. Discenzo , James S. Harris
IPC分类号： B60C11/24 , G01B11/06 , G01D5/353 , H01R39/58 , G01B9/02
CPC分类号： F16D66/02 , B60C11/24 , G01B11/06 , G01D5/268 , G01M11/086 , H01R39/58 , F16D2066/001
摘要： A system for determining wear of an article including an optical fiber for transmitting light from a light source. The optical fiber is embedded in the article, and operatively coupled to an interferometric system. The interferometric system is operatively coupled to a processor. The interferometric system provides the processor with information relating to wear of the optical fiber, and the processor determines wear of the article rate of wear and remaining useful life of the article based on the information relating to wear of the optical fiber.

9. 发明授权

US5909303A Optical modulator and optical modulator array 失效
标题翻译：光调制器和光调制器阵列
公开(公告)号：US5909303A
公开(公告)日：1999-06-01
申请号：US778817
申请日：1997-01-03
申请人： John A. Trezza , Martin Morf , James S. Harris
发明人： John A. Trezza , Martin Morf , James S. Harris
IPC分类号： G02F1/015 , G02F1/21 , G02F1/03
CPC分类号： G02F1/218 , G02F2001/0157 , G02F2001/213
摘要： A reversible and conservative photon routing switch is implemented as a room temperature, optical, vertical cavity X-gate (also sometimes known as a Fredkin gate). Such gates are primitive structures into which all logic functions can be decomposed. The construction of the device makes it uniquely suited to dense packed arrays of optoelectronic components for optical routing and logic. In one of the switching states, light incident on the device from either side of the wafer will pass through the device (the device is bi-directionally transmissive). In the other switching state, light incident from either side of the wafer will be reflected. Switching can be performed using either electrical or optical control. Thus incident photons are either routed through the device or reflected from the device. The characteristics of the device operation for both transmission and reflection are designed to be nearly identical regardless of whether the incident light impinges upon the top of the device or the bottom of the device (after passing through the substrate). This ability to have input light from either side makes the device reversible. This dual reversible and conservative nature along with the vertical cavity format allows for dense two dimensional arrays of devices to be formed on a single substrate. Furthermore, because the incident photon stream is recoverable in both the on and off states and can be recovered from either the top or the bottom of the wafer, device layers can be vertically stacked. Thus the device is useful for 3-D device geometry in which optical outputs from one set of devices can be directly used as the inputs to other sets of devices.
摘要翻译：可逆和保守的光子路由开关实现为室温，光学，垂直腔X型门（有时也称为Fredkin门）。这种门是原始结构，所有的逻辑功能都可以分解到其中。该器件的结构使其独特地适用于用于光路由和逻辑的光电组件的密集封装阵列。在切换状态之一中，从晶片的任一侧入射到器件上的光将穿过器件（器件是双向透射的）。在另一个切换状态下，从晶片的任一侧入射的光将被反射。可以使用电气或光学控制来执行切换。因此，入射光子被路由穿过设备或从设备反射。无论入射光入射到器件的顶部还是器件的底部（通过衬底）之后，传输和反射两者的器件操作的特性被设计为几乎相同。这种从任一侧输入光线的能力使设备可逆。这种双重可逆性和保守性以及垂直腔形式允许在单个衬底上形成致密的二维阵列阵列。此外，由于入射光子流可以在导通和截止状态下恢复，并且可以从晶片的顶部或底部恢复，所以器件层可以垂直堆叠。因此，该装置对于三维装置几何形状是有用的，其中来自一组装置的光学输出可以直接用作其他装置组的输入。

10. 发明授权

US4939557A (110) GaAs microwave FET 失效
标题翻译：（110）GaAs微波FET
公开(公告)号：US4939557A
公开(公告)日：1990-07-03
申请号：US311903
申请日：1989-02-15
申请人： Yi-Ching Pao , James S. Harris
发明人： Yi-Ching Pao , James S. Harris
IPC分类号： H01L29/04 , H01L29/423 , H01L29/812
CPC分类号： H01L29/8128 , H01L29/045 , H01L29/42316
摘要： A field effect transistor (FET) structure suitable for use at microwave frequencies is fabricated on a planar surface of a semi-insulating single crystal GaAs substrate which has been cut and polished to present the (110) surface. This orientation is selected because of its non-polar and other unique surface and interface properties. The (110) crystal axis is tilted from the normal of the planar surface in the direction to expose more of the (111) Ga face about 5.degree. to facilitate molecular beam epitaxial (MBE) growth of smooth, defect-free thin films. An elongate gate electrode is formed along the bottom of an anisotropically etched trench having a pair of longitudinal sidewalls, one vertical and the other tilted outwardly. The trench is selectively oriented on the substrate to facilitate such anisotropic etching. Source and drain electrodes are respectively formed proximate the outwardly tilted and vertical trench sidewalls thereby forming a FET with a higher drain-to-gate breakdown voltage combined with lower parasitic resistance between the source and gate electrode. The invention has demonstrated potential for high speed digital circuits as well a microwave power FET applications.
摘要翻译：在半绝缘单晶GaAs衬底的平面上制造适用于微波频率的场效应晶体管（FET）结构，其被切割和抛光以呈现（110）表面。由于其非极性和其他独特的表面和界面性质，选择此取向。（110）晶轴从平面的法线方向倾斜，以使（111）Ga面的多数暴露于约5°，以促进平滑无缺陷薄膜的分子束外延（MBE）生长。沿着各向异性蚀刻的沟槽的底部形成细长的栅电极，其具有一对纵向侧壁，一个垂直的另一个向外倾斜。沟槽选择性地定向在衬底上以促进这种各向异性蚀刻。源电极和漏电极分别形成在向外倾斜和垂直沟槽侧壁附近，从而形成具有较高漏极 - 栅极击穿电压的FET，并与源电极和栅电极之间的较低寄生电阻相结合。本发明已经证明了高速数字电路以及微波功率FET应用的潜力。

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