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1. 发明申请

US20070105303A1 Methods of forming a plurality of circuit components and methods of forming a plurality of structures suspended elevationally above a substrate 失效
标题翻译：形成多个电路部件的方法和形成在基板上方悬垂的多个结构的方法
公开(公告)号：US20070105303A1
公开(公告)日：2007-05-10
申请号：US11646051
申请日：2006-12-26
申请人： Brett Busch , Fred Fishburn , James Rominger
发明人： Brett Busch , Fred Fishburn , James Rominger
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/0207 , H01L27/10852
摘要： A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material. Then, the sacrificial retaining structure is removed from the substrate, and then capacitor dielectric material and conductive second capacitor electrode material are formed over the outer sidewall surfaces of the first capacitor electrode material formed within the first and second sets of capacitor openings.
摘要翻译：在电容器电极形成材料内形成多个电容器电极开口。第一组开口形成为在电容器电极形成材料内比第二组开口更大的深度。在其中形成导电的第一电容器电极材料。牺牲保持结构在第一电容器电极材料和电容器电极形成材料两者之上形成高度，从而使一些电容器电极形成材料暴露。在保持结构就位的情况下，有效地暴露出第一电容器电极材料的外侧壁表面的至少一些电容器电极形成材料被从衬底上蚀刻。然后，从衬底去除牺牲保持结构，然后在形成在第一组和第二组电容器开口内的第一电容器电极材料的外侧壁表面上形成电容器电介质材料和导电的第二电容器电极材料。

2. 发明申请

US20060148190A1 Methods of forming a plurality of capacitors 失效
标题翻译：形成多个电容器的方法
公开(公告)号：US20060148190A1
公开(公告)日：2006-07-06
申请号：US11362063
申请日：2006-02-24
申请人： Brett Busch , Fred Fishburn , James Rominger
发明人： Brett Busch , Fred Fishburn , James Rominger
IPC分类号： H01L21/20 , H01L21/3205
CPC分类号： D01F8/14 , D01F1/04 , D01F6/62 , Y10T428/2933
摘要： A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material. Then, the sacrificial retaining structure is removed from the substrate, and then capacitor dielectric material and conductive second capacitor electrode material are formed over the outer sidewall surfaces of the first capacitor electrode material formed within the first and second sets of capacitor openings.
摘要翻译：在电容器电极形成材料内形成多个电容器电极开口。第一组开口形成为在电容器电极形成材料内比第二组开口更大的深度。在其中形成导电的第一电容器电极材料。牺牲保持结构在第一电容器电极材料和电容器电极形成材料两者之上形成高度，从而使一些电容器电极形成材料暴露。在保持结构就位的情况下，有效地暴露出第一电容器电极材料的外侧壁表面的至少一些电容器电极形成材料被从衬底上蚀刻。然后，从衬底去除牺牲保持结构，然后在形成在第一组和第二组电容器开口内的第一电容器电极材料的外侧壁表面上形成电容器电介质材料和导电的第二电容器电极材料。

3. 发明授权

US07202127B2 Methods of forming a plurality of capacitors 有权
标题翻译：形成多个电容器的方法
公开(公告)号：US07202127B2
公开(公告)日：2007-04-10
申请号：US10928931
申请日：2004-08-27
申请人： Brett W. Busch , Fred D. Fishburn , James Rominger
发明人： Brett W. Busch , Fred D. Fishburn , James Rominger
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/0207 , H01L27/10852
摘要： A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material. Then, the sacrificial retaining structure is removed from the substrate, and then capacitor dielectric material and conductive second capacitor electrode material are formed over the outer sidewall surfaces of the first capacitor electrode material formed within the first and second sets of capacitor openings.
摘要翻译：在电容器电极形成材料内形成多个电容器电极开口。第一组开口形成为在电容器电极形成材料内比第二组开口更大的深度。在其中形成导电的第一电容器电极材料。牺牲保持结构在第一电容器电极材料和电容器电极形成材料两者之上形成高度，从而使一些电容器电极形成材料暴露。在保持结构就位的情况下，有效地暴露出第一电容器电极材料的外侧壁表面的至少一些电容器电极形成材料被从衬底上蚀刻。然后，从衬底去除牺牲保持结构，然后在形成在第一组和第二组电容器开口内的第一电容器电极材料的外侧壁表面上形成电容器电介质材料和导电的第二电容器电极材料。

4. 发明授权

US07445990B2 Methods of forming a plurality of capacitors 失效
标题翻译：形成多个电容器的方法
公开(公告)号：US07445990B2
公开(公告)日：2008-11-04
申请号：US11362063
申请日：2006-02-24
申请人： Brett W. Busch , Fred D. Fishburn , James Rominger
发明人： Brett W. Busch , Fred D. Fishburn , James Rominger
IPC分类号： H01L21/8242
CPC分类号： D01F8/14 , D01F1/04 , D01F6/62 , Y10T428/2933
摘要： A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material. Then, the sacrificial retaining structure is removed from the substrate, and then capacitor dielectric material and conductive second capacitor electrode material are formed over the outer sidewall surfaces of the first capacitor electrode material formed within the first and second sets of capacitor openings.
摘要翻译：在电容器电极形成材料内形成多个电容器电极开口。第一组开口形成为在电容器电极形成材料内比第二组开口更大的深度。在其中形成导电的第一电容器电极材料。牺牲保持结构在第一电容器电极材料和电容器电极形成材料两者之上形成高度，从而使一些电容器电极形成材料暴露。在保持结构就位的情况下，有效地暴露出第一电容器电极材料的外侧壁表面的至少一些电容器电极形成材料被从衬底上蚀刻。然后，从衬底去除牺牲保持结构，然后在形成在第一组和第二组电容器开口内的第一电容器电极材料的外侧壁表面上形成电容器电介质材料和导电的第二电容器电极材料。

5. 发明授权

US07413952B2 Methods of forming a plurality of circuit components and methods of forming a plurality of structures suspended elevationally above a substrate 失效
标题翻译：形成多个电路部件的方法和形成在基板上方悬垂的多个结构的方法
公开(公告)号：US07413952B2
公开(公告)日：2008-08-19
申请号：US11646051
申请日：2006-12-26
申请人： Brett W. Busch , Fred D. Fishburn , James Rominger
发明人： Brett W. Busch , Fred D. Fishburn , James Rominger
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/0207 , H01L27/10852
摘要： A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material. Then, the sacrificial retaining structure is removed from the substrate, and then capacitor dielectric material and conductive second capacitor electrode material are formed over the outer sidewall surfaces of the first capacitor electrode material formed within the first and second sets of capacitor openings.
摘要翻译：在电容器电极形成材料内形成多个电容器电极开口。第一组开口形成为在电容器电极形成材料内比第二组开口更大的深度。在其中形成导电的第一电容器电极材料。牺牲保持结构在第一电容器电极材料和电容器电极形成材料两者之上形成高度，从而使一些电容器电极形成材料暴露。在保持结构就位的情况下，有效地暴露出第一电容器电极材料的外侧壁表面的至少一些电容器电极形成材料被从衬底上蚀刻。然后，从衬底去除牺牲保持结构，然后在形成在第一组和第二组电容器开口内的第一电容器电极材料的外侧壁表面上形成电容器电介质材料和导电的第二电容器电极材料。

6. 发明申请

US20060051918A1 Methods of forming a plurality of capacitors 有权
公开(公告)号：US20060051918A1
公开(公告)日：2006-03-09
申请号：US10928931
申请日：2004-08-27
申请人： Brett Busch , Fred Fishburn , James Rominger
发明人： Brett Busch , Fred Fishburn , James Rominger
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/0207 , H01L27/10852
摘要： A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material. Then, the sacrificial retaining structure is removed from the substrate, and then capacitor dielectric material and conductive second capacitor electrode material are formed over the outer sidewall surfaces of the first capacitor electrode material formed within the first and second sets of capacitor openings.

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