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    • 1. 发明授权
    • Electro-dielectro-phoretic display device and method thereof
    • 电介质显示装置及其方法
    • US08018430B2
    • 2011-09-13
    • US11948242
    • 2007-11-30
    • Jae-young ChoiJai-yong Han
    • Jae-young ChoiJai-yong Han
    • G09G3/34
    • G02F1/167G02F2001/1676G02F2001/1678G02F2203/34
    • Electrophoretic particles and dielectrophoretic particles are included together in a unit pixel. Each of the electrophoretic particles and the dielectrophoretic particles includes two kinds of particles having different electric properties. The electrophoretic particles include positively charged particles and negatively charged particles. The dielectrophoretic particles include particles having low dielectric constant and particles having high dielectric constant. A first electric field for moving the electrophoretic particles and a second electric field for moving the dielectrophoretic particles are applied to the unit pixel. The second electric field has an asymmetric gradient in the direction where the dielectrophoretic particles move to determine movement directions of the dielectrophoretic particles having different dielectric constants.
    • 电泳粒子和介电电泳粒子一起包含在单位像素中。 电泳粒子和介电电泳粒子各自包含具有不同电特性的两种粒子。 电泳粒子包括带正电的粒子和带负电粒子。 介电电泳颗粒包括具有低介电常数的颗粒和具有高介电常数的颗粒。 用于移动电泳颗粒的第一电场和用于移动介电电泳颗粒的第二电场施加到单位像素。 第二电场在介电电泳颗粒移动的方向上具有不对称梯度,以确定具有不同介电常数的介电电泳颗粒的移动方向。
    • 4. 发明授权
    • Silicon film, crystalline film and method for manufacturing the same
    • 硅膜,结晶膜及其制造方法
    • US07563660B2
    • 2009-07-21
    • US11326171
    • 2006-01-06
    • Jai-Yong Han
    • Jai-Yong Han
    • H01L21/00
    • H01L21/02667H01L21/02532H01L21/2022
    • A silicon film, crystalline film and method for manufacturing the same are provided. The silicon film and/or crystalline film may be an epitaxy-formed layer. A method for manufacturing a silicon film and/or crystalline film may include forming a insulating substrate, forming a buffer layer using a material selected from the group consisting of metals, compounds and/or oxides on the insulating substrate, crystallizing the buffer layer by annealing, and forming a crystalline and/or silicon film by epitaxy. Silicon and crystalline films manufactured by the method provided may have greater crystallinity, greater uniformity and/or higher charge carrier mobility.
    • 提供了硅膜,结晶膜及其制造方法。 硅膜和/或结晶膜可以是外延形成层。 制造硅膜和/或结晶膜的方法可以包括形成绝缘基板,在绝缘基板上使用选自金属,化合物和/或氧化物的材料形成缓冲层,通过退火使缓冲层结晶 ,并通过外延形成晶体和/或硅膜。 通过所提供的方法制造的硅和晶体膜可以具有更大的结晶度,更大的均匀性和/或更高的电荷载流子迁移率。