专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08865519B2 Method of manufacturing silicon carbide structure 有权
标题翻译：制造碳化硅结构的方法
公开(公告)号：US08865519B2
公开(公告)日：2014-10-21
申请号：US13609622
申请日：2012-09-11
申请人： Joung Il Kim , Jae Seok Lim , Mi-Ra Yoon
发明人： Joung Il Kim , Jae Seok Lim , Mi-Ra Yoon
IPC分类号： H01L21/02
CPC分类号： C30B25/00 , C30B29/36 , C30B33/00 , C30B33/02 , H01L21/02376 , H01L21/02529 , H01L21/02664
摘要： A method of manufacturing a silicon carbide structure includes forming a silicon carbide layer by depositing silicon carbide on a base plate by chemical vapor deposition, removing the base plate, decreasing electrical conductivity by heat-treating the silicon carbide structure, and removing a thickness of 200 μm from an upper surface and a lower surface of the silicon carbide structure. In the present invention, silicon carbide is deposited by a CVD method, and the electrical conductivity of the silicon carbide is reduced to the electrical conductivity required for a protection ring of a plasma device through a post-treatment and a post-process. The electrical conductivity may be adjusted even without using separate additives.
摘要翻译：制造碳化硅结构的方法包括通过化学气相沉积在基板上沉积碳化硅来形成碳化硅层，去除基板，通过热处理碳化硅结构降低电导率，并去除厚度为200 从碳化硅结构的上表面和下表面。在本发明中，通过CVD法沉积碳化硅，通过后处理和后处理将碳化硅的电导率降低到等离子体装置的保护环所需的电导率。即使不使用单独的添加剂，也可以调节电导率。

2. 发明申请

US20130168697A1 SILICON CARBIDE STRUCTURE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：硅碳化物结构及其制造方法
公开(公告)号：US20130168697A1
公开(公告)日：2013-07-04
申请号：US13609622
申请日：2012-09-11
申请人： Joung Il Kim , Jae Seok Lim , Mi-Ra Yoon
发明人： Joung Il Kim , Jae Seok Lim , Mi-Ra Yoon
IPC分类号： H01L29/38 , H01L21/304 , H01L21/322 , H01L21/20
CPC分类号： C30B25/00 , C30B29/36 , C30B33/00 , C30B33/02 , H01L21/02376 , H01L21/02529 , H01L21/02664
摘要： A method of manufacturing a silicon carbide structure includes forming a silicon carbide layer by depositing silicon carbide on a base plate by chemical vapor deposition, removing the base plate, decreasing electrical conductivity by heat-treating the silicon carbide structure, and removing a thickness of 200 μm from an upper surface and a lower surface of the silicon carbide structure. In the present invention, silicon carbide is deposited by a CVD method, and the electrical conductivity of the silicon carbide is reduced to the electrical conductivity required for a protection ring of a plasma device through a post-treatment and a post-process. The electrical conductivity may be adjusted even without using separate additives.
摘要翻译：制造碳化硅结构的方法包括通过化学气相沉积在基板上沉积碳化硅来形成碳化硅层，去除基板，通过热处理碳化硅结构降低电导率，并去除厚度为200 妈妈从碳化硅结构的上表面和下表面。在本发明中，通过CVD法沉积碳化硅，通过后处理和后处理将碳化硅的电导率降低到等离子体装置的保护环所需的电导率。即使不使用单独的添加剂，也可以调节电导率。

3. 发明申请

US20120118376A1 SEALING MEMBER FOR PHOTOELECTRIC CONVERSION DEVICE, PHOTOELECTRIC CONVERSION DEVICE HAVING THE SAME AND METHOD OF PREPARING THE SAME 审中-公开
标题翻译：用于光电转换装置的密封构件，具有该光电转换装置的光电转换装置及其制备方法
公开(公告)号：US20120118376A1
公开(公告)日：2012-05-17
申请号：US13165594
申请日：2011-06-21
申请人： Seung-Hwan LEE , Jae-Seok LIM , Soon-Hak HWANG , Jung-Suk SONG
发明人： Seung-Hwan LEE , Jae-Seok LIM , Soon-Hak HWANG , Jung-Suk SONG
IPC分类号： H01L31/0203 , F16J15/10 , H01L31/18 , F16J15/06
CPC分类号： H01G9/2077 , C03C27/10 , H01G9/2031 , H01G9/2059 , H01G9/2068 , H01L51/5246 , Y02E10/542
摘要： A sealing member, a photoelectric conversion device having the same, and a method of preparing the same are disclosed. In one aspect, the sealing member for the photoelectric conversion device joins a first substrate and a second substrate, which face each other, and seals an electrolyte solution in a space therebetween. An edge of the sealing member may include a rounded portion and a radius of a circle including the rounded portion is about 50% or more of the width of the sealing member. The sealing member may serve to reduce leakage of the electrolyte solution due to lowered adhesion of the sealing member or a wrinkled sealing member, and thus, improve reliability of the photoelectric conversion device.
摘要翻译：公开了一种密封构件，具有该密封构件的光电转换装置及其制备方法。一方面，用于光电转换装置的密封构件将彼此面对的第一基板和第二基板接合在其间的空间中密封电解质溶液。密封构件的边缘可以包括圆形部分，并且包括圆形部分的圆的半径为密封构件的宽度的约50％或更多。密封构件可以由于密封构件或起皱密封构件的粘合性降低而减少电解质溶液的泄漏，从而提高光电转换装置的可靠性。

4. 发明申请

US20110114166A1 Photoelectric conversion device 审中-公开
标题翻译：光电转换装置
公开(公告)号：US20110114166A1
公开(公告)日：2011-05-19
申请号：US12662193
申请日：2010-04-05
申请人： Yi-Hyun Chang , Seung-Hwan Lee , Jae-Seok Lim
发明人： Yi-Hyun Chang , Seung-Hwan Lee , Jae-Seok Lim
IPC分类号： H01L31/0224 , H01L31/02
CPC分类号： H01G9/2077 , H01G9/2031 , H01G9/2059 , Y02E10/542
摘要： A photoelectric conversion device capable of increasing an adhesive force between substrates is provided. The photoelectric conversion device includes a first and second substrates facing each other, a photoelectrode including a first transparent conductive layer and formed on a surface of the first substrate facing the second substrate, a counter electrode including a second transparent conductive layer and formed on a surface of the second substrate facing the first substrate, a semiconductor layer formed on the photoelectrode and including a photosensitive dye that generates electrons when excited by light, an electrolyte disposed between the semiconductor layer and the counter electrode, and a sealing member disposed between the first and second transparent conductive layers. At least one of the first and second transparent conductive layers has a first stepped portion in which the sealing member is disposed. The sealing member seals a space between the first and second transparent conductive layers. Accordingly, an adhesive force and a sealing force between the sealing member and the light receiving substrate may be increased.
摘要翻译：提供了能够增加基板之间的粘合力的光电转换装置。光电转换装置包括彼此面对的第一和第二基板，包括第一透明导电层并形成在与第二基板相对的第一基板的表面上的光电极，包括第二透明导电层的对电极形成在表面上所述第二衬底面对所述第一衬底，形成在所述光电极上的半导体层，并且包括在被光激发时产生电子的光敏染料，设置在所述半导体层和所述对电极之间的电解质，以及密封构件，第二透明导电层。第一透明导电层和第二透明导电层中的至少一个具有设置有密封构件的第一台阶部。密封构件密封第一和第二透明导电层之间的空间。因此，可以增加密封构件和光接收基板之间的粘合力和密封力。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式