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1. 发明授权

US09224769B2 Pixel device, and radiation detecting module and apparatus having the same 有权
标题翻译：像素装置，以及具有该像素装置的放射线检测模块和装置
公开(公告)号：US09224769B2
公开(公告)日：2015-12-29
申请号：US13433985
申请日：2012-03-29
申请人： Jae-chul Park , Young Kim , Chang-jung Kim
发明人： Jae-chul Park , Young Kim , Chang-jung Kim
IPC分类号： G01T1/20 , H01L27/146 , H04N5/369 , G01T1/208 , A61B6/03
CPC分类号： H01L27/14609 , A61B6/037 , G01T1/2006 , G01T1/2018 , G01T1/208 , H01L27/14618 , H01L27/14663 , H01L2924/0002 , H04N5/3698 , H01L2924/00
摘要： A pixel device having an improved energy resolution includes at least one photodiode and at least one voltage supply unit for applying a voltage to the photodiode. The pixel device includes a voltage storage unit and a voltage adjusting unit. In a precharge mode, the voltage storage unit stores a first anode voltage. In a sensing mode, the voltage adjusting unit adjusts a second anode voltage of the anode of the photodiode to be the same as the first anode voltage stored in the voltage storage unit.
摘要翻译：具有改善的能量分辨率的像素装置包括至少一个光电二极管和用于向光电二极管施加电压的至少一个电压供应单元。像素装置包括电压存储单元和电压调节单元。在预充电模式中，电压存储单元存储第一阳极电压。在感测模式中，电压调节单元将光电二极管的阳极的第二阳极电压调整为与存储在电压存储单元中的第一阳极电压相同。

2. 发明授权

US08963096B2 X-ray detector including oxide semiconductor transistor 有权
标题翻译： X射线检测器包括氧化物半导体晶体管
公开(公告)号：US08963096B2
公开(公告)日：2015-02-24
申请号：US12926921
申请日：2010-12-17
申请人： Sun-il Kim , Jae-chul Park , Sang-wook Kim , Chang-jung Kim
发明人： Sun-il Kim , Jae-chul Park , Sang-wook Kim , Chang-jung Kim
IPC分类号： H01L27/146 , G01T1/24 , H01L31/08
CPC分类号： H01L31/085 , G01T1/24
摘要： Example embodiments are directed an X-ray detector including an oxide semiconductor transistor. The X-ray detector including the oxide semiconductor transistor includes an oxide semiconductor transistor and a signal storage capacitor in parallel to each other on a substrate. The oxide semiconductor transistor includes a channel formed of an oxide semiconductor material, and a photoconductor. A pixel electrode and a common electrode are formed on opposite surfaces of the photoconductor. The channel includes ZnO, or a compound including ZnO and at least one selected from a group consisting of gallium (Ga), indium (In), hafnium (Hf), and tin (Sn).
摘要翻译：示例性实施例涉及包括氧化物半导体晶体管的X射线检测器。包括氧化物半导体晶体管的X射线检测器包括在基板上彼此平行的氧化物半导体晶体管和信号存储电容器。氧化物半导体晶体管包括由氧化物半导体材料形成的沟道和感光体。像素电极和公共电极形成在感光体的相对表面上。该通道包括ZnO或包含ZnO和选自镓（Ga），铟（In），铪（Hf）和锡（Sn）中的至少一种的化合物。

3. 发明授权

US08605610B2 Method and apparatus for link adaptive multicast/broadcast transmission and reception 失效
标题翻译：用于链路自适应组播/广播发送和接收的方法和装置
公开(公告)号：US08605610B2
公开(公告)日：2013-12-10
申请号：US12731370
申请日：2010-03-25
申请人： Sung-Hyun Hwang , Jin Soo Wang , Jae Chul Park , Yun Hee Kim
发明人： Sung-Hyun Hwang , Jin Soo Wang , Jae Chul Park , Yun Hee Kim
IPC分类号： H04L12/26 , H04H20/71 , H04W72/04
CPC分类号： H04L1/0028 , H04H20/42 , H04H20/71 , H04L1/0026 , H04L1/1607 , H04L25/0224 , H04L2001/0093
摘要： A method and apparatus for adaptively transmitting the same data, i.e., multicast/broadcast data, according to channel quality to a receiving group including one or more terminals that request the same service in a wireless network. A base station obtains feedback on channel quality indications (CQIs) from a plurality of terminals, selects a transmission technique that satisfies desired service quality based on the CQIs, and transmits data to the terminals included in a receiving group by using the selected transmission technique. The CQIs to be transmitted from the terminals in the receiving group to the base station are transmitted through a previously allocated common CQI feedback channel. In the present invention, in order to reduce a CQI feedback channel capacity, the base station does not allocate a common CQI feedback channel with respect to each reception terminal and allocates radio resources according to CQI levels. As radio resources are allocated according to CQI levels, a CQI feedback channel capacity may not be increased even when the number of terminals in the receiving group is increased and adaptive transmission may be efficiently performed.
摘要翻译：一种用于根据信道质量将相同数据即组播/广播数据自适应发送到包括在无线网络中请求相同服务的一个或多个终端的接收组的方法和装置。基站从多个终端获取对信道质量指示（CQI）的反馈，基于CQI选择满足期望的服务质量的传输技术，并且通过使用所选择的传输技术将数据发送到包括在接收组中的终端。通过先前分配的公共CQI反馈信道来发送从接收组中的终端发送到基站的CQI。在本发明中，为了降低CQI反馈信道容量，基站不对每个接收终端分配公共CQI反馈信道，根据CQI等级分配无线资源。由于根据CQI等级分配无线资源，所以即使接收组中的终端数量增加，也可以有效地进行自适应传输，CQI反馈信道容量也不会增加。

4. 发明授权

US08507906B2 CMOS image sensor and method of manufacturing the same 有权
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US08507906B2
公开(公告)日：2013-08-13
申请号：US12591909
申请日：2009-12-04
申请人： Sung-ho Park , I-hun Song , Wook Lee , Sang-wook Kim , Sun-il Kim , Jae-chul Park
发明人： Sung-ho Park , I-hun Song , Wook Lee , Sang-wook Kim , Sun-il Kim , Jae-chul Park
IPC分类号： H01L31/032 , H01L21/00
CPC分类号： H01L27/14636 , H01L27/1225 , H01L27/14609 , H01L27/14612 , H01L27/14641 , H01L27/14645 , H01L27/14689
摘要： Provided is a complementary metal oxide semiconductor (CMOS) image sensor having a structure capable of increasing areas of photodiodes in unit pixels and expanding light receiving areas of the photodiodes. In the CMOS image sensor, transfer transistors may be formed on the photodiode, and reset transistors, source follower transistors, and selection transistors may be formed on a layer on which the transfer transistors are not formed. In such a CMOS image sensor, the areas of the photodiodes may be increased in unit pixels so that a size of the unit pixels may be reduced and sensitivity of the pixel may be improved.
摘要翻译：提供了具有能够增加单位像素中的光电二极管的面积并扩大光电二极管的光接收面积的结构的互补金属氧化物半导体（CMOS）图像传感器。在CMOS图像传感器中，可以在光电二极管上形成传输晶体管，并且可以在不形成传输晶体管的层上形成复位晶体管，源极跟随器晶体管和选择晶体管。在这样的CMOS图像传感器中，可以以单位像素增加光电二极管的面积，从而可以减小单位像素的尺寸，并且可以提高像素的灵敏度。

5. 发明授权

US08373237B2 Transistor and method of manufacturing the same 有权
标题翻译：晶体管及其制造方法
公开(公告)号：US08373237B2
公开(公告)日：2013-02-12
申请号：US12458251
申请日：2009-07-07
申请人： Sung-ho Park , Chang-jung Kim , I-hun Song , Sang-wook Kim , Jae-chul Park
发明人： Sung-ho Park , Chang-jung Kim , I-hun Song , Sang-wook Kim , Jae-chul Park
IPC分类号： H01L27/088
CPC分类号： H01L29/785 , H01L21/8221 , H01L27/0688 , H01L29/66795 , H01L29/7869
摘要： Example embodiments provide a transistor and a method of manufacturing the same. The transistor may include a channel layer formed of an oxide semiconductor and a gate having a three-dimensional structure. A plurality of the transistors may be stacked in a perpendicular direction to a substrate. At least some of the plurality of transistors may be connected to each other.
摘要翻译：示例性实施例提供晶体管及其制造方法。晶体管可以包括由氧化物半导体形成的沟道层和具有三维结构的栅极。多个晶体管可以沿垂直于衬底的方向堆叠。多个晶体管中的至少一些可以彼此连接。

6. 发明申请

US20120318989A1 PIXEL DEVICE, AND RADIATION DETECTING MODULE AND APPARATUS HAVING THE SAME 有权
标题翻译：像素装置和辐射检测模块以及具有该装置的装置
公开(公告)号：US20120318989A1
公开(公告)日：2012-12-20
申请号：US13433985
申请日：2012-03-29
申请人： Jae-chul Park , Young Kim , Chang-jung Kim
发明人： Jae-chul Park , Young Kim , Chang-jung Kim
IPC分类号： G01T1/20 , H01L27/146 , H01L31/00
CPC分类号： H01L27/14609 , A61B6/037 , G01T1/2006 , G01T1/2018 , G01T1/208 , H01L27/14618 , H01L27/14663 , H01L2924/0002 , H04N5/3698 , H01L2924/00
摘要： A pixel device having an improved energy resolution includes at least one photodiode and at least one voltage supply unit for applying a voltage to the photodiode. The pixel device includes a voltage storage unit and a voltage adjusting unit. In a precharge mode, the voltage storage unit stores a first anode voltage. In a sensing mode, the voltage adjusting unit adjusts a second anode voltage of the anode of the photodiode to be the same as the first anode voltage stored in the voltage storage unit.
摘要翻译：具有改善的能量分辨率的像素装置包括至少一个光电二极管和用于向光电二极管施加电压的至少一个电压供应单元。像素装置包括电压存储单元和电压调节单元。在预充电模式中，电压存储单元存储第一阳极电压。在感测模式中，电压调节单元将光电二极管的阳极的第二阳极电压调整为与存储在电压存储单元中的第一阳极电压相同。

7. 发明申请

US20120295399A1 OXIDE-BASED THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME, ZINC OXIDE ETCHANT, AND A METHOD OF FORMING THE SAME 审中-公开
标题翻译：基于氧化物的薄膜晶体管，其制造方法，氧化锌蚀刻剂及其形成方法
公开(公告)号：US20120295399A1
公开(公告)日：2012-11-22
申请号：US13559959
申请日：2012-07-27
申请人： Chang-jung KIM , Young-soo Park , Eun-ha Lee , Jae-chul Park
发明人： Chang-jung KIM , Young-soo Park , Eun-ha Lee , Jae-chul Park
IPC分类号： H01L21/336 , C09K13/06 , C09K13/08 , H01L21/36
CPC分类号： C09K13/06 , H01L21/467 , H01L29/7869
摘要： Provided is a zinc (Zn) oxide-based thin film transistor that may include a gate, a gate insulating layer on the gate, a channel including zinc oxide and may be on a portion of the gate insulating layer, and a source and drain contacting respective sides of the channel. The zinc (Zn) oxide-based thin film transistor may further include a recession in the channel between the source and the drain, and a zinc oxide-based etchant may be used to form the recession.
摘要翻译：提供一种锌（Zn）氧化物基薄膜晶体管，其可以包括栅极，栅极上的栅极绝缘层，包含氧化锌的沟道，并且可以在栅极绝缘层的一部分上，以及源极和漏极接触渠道的各边。锌（Zn）氧化物基薄膜晶体管还可以包括在源极和漏极之间的沟道中的凹陷，并且可以使用氧化锌基蚀刻剂来形成凹陷。

8. 发明申请

US20120260103A1 SECURITY CIRCUIT USING AT LEAST TWO FINITE STATE MACHINE UNITS AND METHODS USING THE SAME 审中-公开
标题翻译：使用至少两个有限状态机器单元的安全电路及其使用方法
公开(公告)号：US20120260103A1
公开(公告)日：2012-10-11
申请号：US13494534
申请日：2012-06-12
申请人： Kyung-Wan NAM , Jae-Chul PARK
发明人： Kyung-Wan NAM , Jae-Chul PARK
IPC分类号： G06F21/00
CPC分类号： G11C8/16 , G11C8/18 , G11C8/20
摘要： A security circuit using at least two finite state machine units for storing data to and reading data from a multiport memory in a pipelined manner and an intermediate memory, for facilitating transfer of data between the at least two finite state machines. The security circuit may be used to perform key setup and/or data ciphering faster. The security circuit may operate in any environment where the key is changed every frame, for example, a wireless LAN application and the security circuit may operate in conjunction with, or as part of, a MAC controller.
摘要翻译：一种使用至少两个有限状态机单元的安全电路，用于以流水线方式将数据存储到多端口存储器中并从其中读取数据，以及用于便于在至少两个有限状态机之间传送数据。安全电路可以用于更快地执行密钥建立和/或数据加密。安全电路可以在每个帧改变密钥的任何环境中操作，例如无线LAN应用，并且安全电路可以与MAC控制器结合或者作为MAC控制器的一部分来操作。

9. 发明授权

US08158978B2 Inverter, logic circuit including an inverter and methods of fabricating the same 有权
标题翻译：逆变器，包括逆变器的逻辑电路及其制造方法
公开(公告)号：US08158978B2
公开(公告)日：2012-04-17
申请号：US12805190
申请日：2010-07-16
申请人： Sang-wook Kim , Young-soo Park , Jae-chul Park
发明人： Sang-wook Kim , Young-soo Park , Jae-chul Park
IPC分类号： H01L29/12 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H03K19/094 , H03K19/20
CPC分类号： H01L21/823462 , H01L21/84 , H01L27/0883
摘要： An inverter, a logic circuit including the inverter and method of fabricating the same are provided. The inverter includes a load transistor of a depletion mode, and a driving transistor of an enhancement mode, which is connected to the load transistor. The load transistor may have a first oxide layer as a first channel layer. The driving transistor may have a second oxide layer as a second channel layer.
摘要翻译：提供了一种逆变器，包括逆变器的逻辑电路及其制造方法。逆变器包括耗尽模式的负载晶体管和连接到负载晶体管的增强模式的驱动晶体管。负载晶体管可以具有作为第一沟道层的第一氧化物层。驱动晶体管可以具有作为第二沟道层的第二氧化物层。

10. 发明申请

US20110309259A1 Large-scale X-ray detectors and methods of manufacturing the same 有权
标题翻译：大型X射线探测器及其制造方法
公开(公告)号：US20110309259A1
公开(公告)日：2011-12-22
申请号：US12929203
申请日：2011-01-07
申请人： Sun-il Kim , Jae-chul Park , Sang-wook Kim , Chang-jung Kim
发明人： Sun-il Kim , Jae-chul Park , Sang-wook Kim , Chang-jung Kim
IPC分类号： G01T1/24 , H01L31/18
CPC分类号： G01T1/24 , H01L24/24 , H01L24/73 , H01L27/14609 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14676 , H01L27/14687 , H01L31/085 , H01L2224/16225 , H01L2924/12043 , H01L2924/14 , H01L2924/15788 , H01L2924/00
摘要： Large-scale X-ray detectors and methods of manufacturing the same are provided, the large-scale X-ray detectors include a photoconductor layer configured to generate electrical charges according to an incident X-ray using an entire area of the photoconductor layer, a common electrode on an upper surface of the photoconductor layer, a plurality of pixel electrodes, configured to convert the electrical charges into electrical signals, on a lower surface of the photoconductor layer and divided into a plurality of groups, and a plurality of application-specific integrated circuits (ASICs) each corresponding to one of the groups. Each ASIC is configured to process the electrical signals conveyed via the pixel electrodes in the corresponding group. The ASICs process the electrical signals so that seamless image information is collectively generated by the ASICs with respect to the entire area of the photoconductor layer.
摘要翻译：提供了大规模X射线检测器及其制造方法，大规模X射线检测器包括：光电导体层，被配置为根据入射的X射线使用光电导体层的整个面积产生电荷; 所述光电导体层的上表面上的公共电极，被配置为将所述电荷转换为电信号的多个像素电极，在所述感光体层的下表面上并分成多个组，以及多个应用特定集成电路（ASIC），每个对应于该组中的一个。每个ASIC被配置为处理通过相应组中的像素电极传送的电信号。 ASIC处理电信号，使得ASIC相对于感光体层的整个区域共同地产生无缝图像信息。

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