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    • 9. 发明申请
    • COMPOSITION HAVING ENHANCED CORROSION RESISTANCE AND PH BUFFERING PROPERTY FOR ANTIFREEZE LIQUID OR COOLANT
    • 具有增强耐腐蚀性和防止液体或冷却液的PH缓冲性能的组合物
    • US20140223929A1
    • 2014-08-14
    • US14346716
    • 2012-01-31
    • Jae Yoon ParkChang Yeol JoDong Yeol Choi
    • Jae Yoon ParkChang Yeol JoDong Yeol Choi
    • C09K5/20
    • C09K5/20C23F11/08
    • A composition for the antifireeze liquid or the coolant includes a cyclo hexane dicarboxylic acid, an azole- or thiazole-based inhibitor, and a metal from an element of group 2, group 5, group 6, or group 7. The composition of the present invention has increased corrosion resistance at a lower density by not containing organic additives, and has a better pH buffering property due to enhanced thermal oxidation stability at a high temperature. Even after a long-term operation for over 200000 km, the composition of the present invention maintains a metal corrosion resistance capability, the appearance of a water pump impeller and the inside of a radiator tube including aluminum remains decent, and the composition has a superior corrosion resistance effect with respect to internal metal parts even after an operational test, thereby allowing use of the composition for the antifreeze liquid or the coolant having a long life.
    • 用于防冻液体或冷却剂的组合物包括环己烷二羧酸,唑类或噻唑类抑制剂和来自第2组,第5组,第6组或第7组的元素的金属。本发明的组合物 本发明通过不含有机添加剂而在较低密度下提高了耐腐蚀性,并且由于在高温下的热氧化稳定性的提高而具有更好的pH缓冲性能。 即使经过长达二十万公里的长时间运行,本发明的组合物仍具有耐金属腐蚀能力,水泵叶轮的外观以及包含铝的散热器管的内部保持不变,并且组合物具有优异的 即使在操作试验之后,对于内部金属部件也具有耐腐蚀性,从而可以使用寿命长的防冻液或冷却剂用组合物。
    • 10. 发明授权
    • Organic thin film transistor and method for manufacturing the same
    • 有机薄膜晶体管及其制造方法
    • US08735870B2
    • 2014-05-27
    • US11644243
    • 2006-12-22
    • Chang Wook HanJae Yoon Lee
    • Chang Wook HanJae Yoon Lee
    • H01L29/08
    • H01L51/0512H01L51/0533H01L51/0545H01L51/105
    • An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.
    • 公开了一种有机薄膜晶体管及其制造方法,其可以通过降低在有机半导体层和源极/漏极之间的接触区域中发生的接触电阻来提高器件性能。 有机薄膜晶体管包括形成在基板上的栅极电极,形成在栅电极上的栅极绝缘层,与栅极电极的两个边缘重叠并形成在栅极绝缘层上的源极和漏极电极,形成在栅极绝缘层上的有机半导体层 包括源极/漏极的栅极绝缘层,在栅极绝缘层和源极/漏极之间形成的具有亲水性的第一粘合剂层和在有机半导体层和栅极绝缘层之间形成的具有疏水性的第二粘合剂层 。