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    • 1. 发明授权
    • Differential current sensor device and method
    • 差动电流传感器装置及方法
    • US07994766B2
    • 2011-08-09
    • US12130164
    • 2008-05-30
    • Jader Alves De Lima FilhoWallace A. Pimenta
    • Jader Alves De Lima FilhoWallace A. Pimenta
    • G05F1/573G05F1/575
    • H02M3/158H02M2001/0009
    • A current sensor having a pair of sense transistors is disclosed. The sense transistors sense a current conducted by a power transistor of a voltage regulator. The ratio in size between the power transistor and the sense transistors corresponds to a scaling factor M. Each sense transistor has an associated series connected sense resistor. The two sense resistors are unbalanced and provide a differential voltage based on the sensed current at the sense transistor to a transconductor. The transconductor has heavy emitter degeneration to provide an output current substantially proportional to the current conducted by the primary power transistor, the proportion determined by the scaling factor M and a ratio of the emitter degeneration and sense resistors.
    • 公开了一种具有一对感测晶体管的电流传感器。 感测晶体管感测由电压调节器的功率晶体管传导的电流。 功率晶体管和感测晶体管之间的尺寸比对应于缩放因子M.每个感测晶体管具有相关联的串联连接的检测电阻器。 两个感测电阻器是不平衡的,并且基于在感测晶体管处的感测电流到跨导器提供差分电压。 跨导体具有重的发射极退化,以提供基本上与主功率晶体管传导的电流成比例的输出电流,由比例因子M确定的比例以及发射极退化和检测电阻的比率。
    • 2. 发明申请
    • DIFFERENTIAL CURRENT SENSOR DEVICE AND METHOD
    • 差分电流传感器装置及方法
    • US20090295353A1
    • 2009-12-03
    • US12130164
    • 2008-05-30
    • Jader Alves De Lima FilhoWallace A. Pimenta
    • Jader Alves De Lima FilhoWallace A. Pimenta
    • G05F1/00
    • H02M3/158H02M2001/0009
    • A current sensor having a pair of sense transistors is disclosed. The sense transistors sense a current conducted by a power transistor of a voltage regulator. The ratio in size between the power transistor and the sense transistors corresponds to a scaling factor M. Each sense transistor has an associated series connected sense resistor. The two sense resistors are unbalanced and provide a differential voltage based on the sensed current at the sense transistor to a transconductor. The transconductor has heavy emitter degeneration to provide an output current substantially proportional to the current conducted by the primary power transistor, the proportion determined by the scaling factor M and a ratio of the emitter degeneration and sense resistors.
    • 公开了一种具有一对感测晶体管的电流传感器。 感测晶体管感测由电压调节器的功率晶体管传导的电流。 功率晶体管和感测晶体管之间的尺寸比对应于缩放因子M.每个感测晶体管具有相关联的串联连接的检测电阻器。 两个感测电阻器是不平衡的,并且基于在感测晶体管处的感测电流到跨导器提供差分电压。 跨导体具有重的发射极退化,以提供基本上与主功率晶体管传导的电流成比例的输出电流,由比例因子M确定的比例以及发射极退化和检测电阻的比率。
    • 3. 发明授权
    • Low power voltage reference
    • 低功率参考电压
    • US07486129B2
    • 2009-02-03
    • US11681067
    • 2007-03-01
    • Stefano PietriJader Alves De Lima FilhoAlfredo Olmos
    • Stefano PietriJader Alves De Lima FilhoAlfredo Olmos
    • G05F1/10G05F3/02
    • G05F3/262G05F3/245
    • A voltage reference includes a first cell configured to receive a first proportional to absolute temperature (PTAT) current and a second cell configured to receive a second PTAT current. The first cell includes a diode-connected stack of insulated-gate field-effect transistors (IGFETs). The diode-connected stack of IGFETs includes a first transistor that is configured to be biased in a triode weak inversion region. The second cell includes a diode-connected stack of IGFETs and a serially coupled resistor. A magnitude of the second PTAT current is based on a drain-to-source voltage of the first transistor and a value of the serially coupled resistor. The voltage reference provides a reference voltage at a reference node of the second cell based on the second PTAT current.
    • 电压参考包括被配置为接收第一与绝对温度(PTAT)成比例的电流的第一单元和被配置为接收第二PTAT电流的第二单元。 第一个单元包括二极管连接的绝缘栅场效应晶体管(IGFET)堆叠。 IGFET的二极管连接的堆叠包括被配置为偏置在三极管弱反转区域中的第一晶体管。 第二单元包括二极管连接的IGFET堆叠和串联电阻器。 第二PTAT电流的大小基于第一晶体管的漏极 - 源极电压和串联电阻器的值。 电压参考基于第二PTAT电流在第二单元的参考节点处提供参考电压。
    • 4. 发明申请
    • LOW POWER VOLTAGE REFERENCE
    • 低功率电压参考
    • US20080218253A1
    • 2008-09-11
    • US11681067
    • 2007-03-01
    • STEFANO PIETRIJader Alves De Lima FilhoAlfredo Olmos
    • STEFANO PIETRIJader Alves De Lima FilhoAlfredo Olmos
    • G05F1/10
    • G05F3/262G05F3/245
    • A voltage reference includes a first cell configured to receive a first proportional to absolute temperature (PTAT) current and a second cell configured to receive a second PTAT current. The first cell includes a diode-connected stack of insulated-gate field-effect transistors (IGFETs). The diode-connected stack of IGFETs includes a first transistor that is configured to be biased in a triode weak inversion region. The second cell includes a diode-connected stack of IGFETs and a serially coupled resistor. A magnitude of the second PTAT current is based on a drain-to-source voltage of the first transistor and a value of the serially coupled resistor. The voltage reference provides a reference voltage at a reference node of the second cell based on the second PTAT current.
    • 电压基准包括被配置为接收第一与绝对温度(PTAT)成比例的电流的第一单元和被配置为接收第二PTAT电流的第二单元。 第一个单元包括二极管连接的绝缘栅场效应晶体管(IGFET)堆叠。 IGFET的二极管连接的堆叠包括被配置为偏置在三极管弱反转区域中的第一晶体管。 第二单元包括二极管连接的IGFET堆叠和串联电阻器。 第二PTAT电流的大小基于第一晶体管的漏极 - 源极电压和串联电阻器的值。 电压参考基于第二PTAT电流在第二单元的参考节点处提供参考电压。
    • 5. 发明授权
    • Current sensor device
    • 电流传感器装置
    • US07586367B2
    • 2009-09-08
    • US11739933
    • 2007-04-25
    • Jader Alves De Lima Filho
    • Jader Alves De Lima Filho
    • G06F7/12
    • G01R19/0092H02M3/156H02M2001/0009
    • A current sensor senses the current at a sense transistor and generates an output current that is an accurate proportional representation of the current at the sense transistor. Furthermore, the sensed current is relatively independent of the resistive load of the feedback path at feedback control module to which it is applied. In one embodiment, the feedback control module uses the sensed current in a DC-DC voltage converter to regulate a voltage. The current sensor employs a pair of operational amplifiers to match a voltage at a current electrode of a transistor that generates the output current to a voltage at a current electrode of the sense transistor, such that an effective resistance of the transistor generating the output current is significantly higher than the resistive load of the feedback control module, thereby ensuring that the output current is relatively independent of the resistive load of the feedback control module.
    • 电流传感器感测感测晶体管上的电流,并产生输出电流,其是在感测晶体管处的电流的精确比例表示。 此外,感测的电流相对独立于其所应用的反馈控制模块处的反馈路径的电阻负载。 在一个实施例中,反馈控制模块使用DC-DC电压转换器中的感测电流来调节电压。 电流传感器使用一对运算放大器来将产生输出电流的晶体管的电流电极上的电压与感测晶体管的电流电极处的电压相匹配,使得产生输出电流的晶体管的有效电阻为 显着高于反馈控制模块的电阻负载,从而确保输出电流相对独立于反馈控制模块的电阻负载。
    • 7. 发明申请
    • CURRENT SENSOR DEVICE
    • 电流传感器装置
    • US20080265850A1
    • 2008-10-30
    • US11739933
    • 2007-04-25
    • Jader Alves De Lima Filho
    • Jader Alves De Lima Filho
    • G05F1/00
    • G01R19/0092H02M3/156H02M2001/0009
    • A current sensor senses the current at a sense transistor and generates an output current that is an accurate proportional representation of the current at the sense transistor. Furthermore, the sensed current is relatively independent of the resistive load of the feedback path at feedback control module to which it is applied. In one embodiment, the feedback control module uses the sensed current in a DC-DC voltage converter to regulate a voltage. The current sensor employs a pair of operational amplifiers to match a voltage at a current electrode of a transistor that generates the output current to a voltage at a current electrode of the sense transistor, such that an effective resistance of the transistor generating the output current is significantly higher than the resistive load of the feedback control module, thereby ensuring that the output current is relatively independent of the resistive load of the feedback control module.
    • 电流传感器感测感测晶体管上的电流,并产生输出电流,其是在感测晶体管处的电流的精确比例表示。 此外,感测的电流相对独立于其所应用的反馈控制模块处的反馈路径的电阻负载。 在一个实施例中,反馈控制模块使用DC-DC电压转换器中的感测电流来调节电压。 电流传感器使用一对运算放大器来将产生输出电流的晶体管的电流电极上的电压与感测晶体管的电流电极处的电压相匹配,使得产生输出电流的晶体管的有效电阻为 显着高于反馈控制模块的电阻负载,从而确保输出电流相对独立于反馈控制模块的电阻负载。