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    • 10. 发明授权
    • Wide band gap bipolar transistor with reduced thermal runaway
    • 宽带双极晶体管具有减少的热失控
    • US06989581B2
    • 2006-01-24
    • US10497814
    • 2002-12-23
    • Timothy Jonathan Phillips
    • Timothy Jonathan Phillips
    • H01L27/082
    • H01L29/66318H01L29/1004H01L29/7371
    • A bipolar transistor with vertical geometry comprises a base region (1) provided with a base contact (21), emitter and collector regions (2,3) arranged to extract minority carriers from the base region, and an excluding structure for counteracting entry of minority carriers into the base region via the base contact, wherein the base region has a bandgap of greater than 0.5 eV and a doping level greater than 1017 cm−3. As shown the base includes an excluding heterojunction (4) preventing entry of carriers from the base contact (21), but alternatively the base region could comprise a “high-low” doping homojunction. The construction shows improved resistance to thermal runaway even in multi-finger transistors. It is particularly useful for high power, high frequency transistors, e.g. base on gallium indium arsenide. The collector region preferably has a heterostructure.
    • 具有垂直几何形状的双极晶体管包括设置有基极触点(21)的基极区域(1),布置成从基极区域提取少数载流子的发射极和集电极区域(2,3),以及用于抵消少数进入的排除结构 载体经由基极接触进入基极区域,其中基极区域具有大于0.5eV的带隙和大于10μS-3的掺杂水平。 如图所示,底座包括防止载体从基极触点(21)进入的排除异质结(4),但是也可选择地,基极区域可以包括“高 - 低”掺杂均质结。 该结构即使在多指状晶体管中也显示出改善的耐热失控性。 它对于大功率高频晶体管是特别有用的。 基于砷化铟镓。 收集区优选具有异质结构。