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1. 发明授权

US5410185A Internal bridging contact 失效
标题翻译：内部桥接接触
公开(公告)号：US5410185A
公开(公告)日：1995-04-25
申请号：US170659
申请日：1993-12-20
申请人： Jenn L. Yeh
发明人： Jenn L. Yeh
IPC分类号： H01L21/768 , H01L23/522 , H01L23/48
CPC分类号： H01L21/76895 , H01L23/5221 , H01L2924/0002
摘要： A bridging contact between internal contacts in a semiconductor integrated circuit is formed which is insulated from any connection to an intervening feature. A first dielectric layer is deposited over the contacts and the intervening feature, followed by an etch stop layer. The etch stop layer is patterned to form an etch stop mask and a second dielectric layer is deposited over the first dielectric layer and the patterned etch stop. The first and second dielectric layers are etched to form a trench opening and a pair of communicating passageways in the dielectric layers which expose the internal contacts. The etch stop mask protects and controls the vertical and horizontal dimensions of the resultant dielectric insulator that protects the intervening feature. Metal is deposited in the opening and passageways to form a bridging contact between the contacts. The bridging contact is electrically isolated from the intervening feature by the dielectric insulator remaining over and around the intervening feature.
摘要翻译：形成半导体集成电路中的内部触点之间的桥接接触，其与任何与中间特征的连接绝缘。第一电介质层沉积在触点和中间特征之后，随后是蚀刻停止层。蚀刻停止层被图案化以形成蚀刻停止掩模，并且第二介电层沉积在第一介电层和图案化蚀刻停止点上。蚀刻第一和第二电介质层以在电介质层中形成沟槽开口和一对连通通道，其暴露内部触点。蚀刻停止掩模保护并控制所得介电绝缘体的垂直和水平尺寸，以保护中间特征。金属沉积在开口和通道中以在触点之间形成桥接接触。桥接接触件通过绝缘体绝缘体与中间特征电隔离，保持在中间特征之上和周围。

2. 发明授权

US4832789A Semiconductor devices having multi-level metal interconnects 失效
标题翻译：具有多级金属互连的半导体器件
公开(公告)号：US4832789A
公开(公告)日：1989-05-23
申请号：US179176
申请日：1988-04-08
申请人： William T. Cochran , Agustin M. Garcia , Graham W. Hills , Jenn L. Yeh
发明人： William T. Cochran , Agustin M. Garcia , Graham W. Hills , Jenn L. Yeh
IPC分类号： H01L21/302 , H01L21/00 , H01L21/033 , H01L21/3065 , H01L21/3213 , H01L21/60 , H01L21/768 , H01L23/522
CPC分类号： H01L21/76802 , H01L21/0332
摘要： A self-assigned, self-planarized metallization scheme for multilevel interconnections using self-aligned windows in integrated circuits is described. Trenches are etched into a dielectric and then, using an etch stop layer on top of the dielectric to prevent unwanted etching of the dielectric, self-aligned windows which expose portions of the substrate are etched in the dielectric. Self-aligned windows can also be formed without a mask.

3. 发明授权

US3853115A Dining arrangement 失效
标题翻译：餐饮安排
公开(公告)号：US3853115A
公开(公告)日：1974-12-10
申请号：US39933473
申请日：1973-09-20
申请人： JENN L
发明人： JENN L
IPC分类号： A47J37/06 , B08B15/00 , F24C15/20 , F24C7/04
CPC分类号： F24C15/2042 , A47B2200/06 , A47J37/06 , B08B15/007
摘要： A restaurant dining arrangement is provided with a plurality of tables for the seating of patrons and the broiling of meat or the like in open air broilers at the tables. Power driven fan means are provided to draw air laterally across the broiler for removing smoke and odor laden gases caused by broiling meat on the broiler and moving these gases through a conduit to the exterior of the room having therein the tables. The tables are subdivided between a stationary portion for seating at least most of the patrons and a portable portion having therein the broiler and fan means, which portable portion may be moved selectively between stationary table portions for the cooking of meat, so that a small number of portable portions may serve a large number of stationary table portions.
摘要翻译：餐厅用餐安排设置有多个桌子，用于在餐桌上的露天肉鸡中安放顾客和肉类等。提供动力驱动的风扇装置以横向横穿肉鸡的空气，以便除去由肉鸡肉鸡引起的烟雾和气味气体，并将这些气体通过导管移动到其中具有桌子的房间的外部。桌子被细分成至少大多数顾客的固定部分和具有其中的肉鸡和风扇装置的便携部分，便携式部分可以选择性地在用于烹饪肉的固定台部之间移动，使得少数的便携式部分可以服务于大量的静止台部分。

4. 发明授权

US5169802A Internal bridging contact 失效
标题翻译：内部桥接接触
公开(公告)号：US5169802A
公开(公告)日：1992-12-08
申请号：US716050
申请日：1991-06-17
申请人： Jenn L. Yeh
发明人： Jenn L. Yeh
IPC分类号： H01L21/768 , H01L23/522
CPC分类号： H01L21/76895 , H01L23/5221 , H01L2924/0002
摘要： A bridging contact between internal contacts in a semiconductor integrated circuit is formed which is insulated from any connection to an intervening feature. A first dielectric layer is deposited over the contacts and the intevening feature, followed by an etch stop layer. The etch stop layer is patterned to form an etch stop mask and a second dielectric layer is deposited over the first dielectric layer and the patterned etch stop. The first and second dielectric layers are etched to form a trench opening and a pair of communicating passageways in the dielectric layers which expose the internal contacts. The etch stop mask protects and controls the vertical and horizontal dimensions of the resultant dielectric insulator that protects the intervening feature. Metal is deposited in the opening and passageways to form a bridging contact between the contacts. The bridging contact is electrically isolated from the intervening feature by the dielectric insulator remaining over and around the intervening feature.
摘要翻译：形成半导体集成电路中的内部触点之间的桥接接触，其与任何与中间特征的连接绝缘。第一介电层沉积在触点和整体特征之后，随后是蚀刻停止层。蚀刻停止层被图案化以形成蚀刻停止掩模，并且第二介电层沉积在第一介电层和图案化蚀刻停止点上。蚀刻第一和第二电介质层以在电介质层中形成沟槽开口和一对连通通道，其暴露内部触点。蚀刻停止掩模保护并控制所得介电绝缘体的垂直和水平尺寸，以保护中间特征。金属沉积在开口和通道中以在触点之间形成桥接接触。桥接接触件通过绝缘体绝缘体与中间特征电隔离，保持在中间特征之上和周围。

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