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1. 发明授权

US08526829B1 System, method and apparatus for clockless PPM optical communications 有权
标题翻译：用于无时钟PPM光通信的系统，方法和装置
公开(公告)号：US08526829B1
公开(公告)日：2013-09-03
申请号：US12868378
申请日：2010-08-25
申请人： Daniel Yap , Irina Ionova
发明人： Daniel Yap , Stanislav I Ionov
IPC分类号： H04B10/04
CPC分类号： H04B10/524 , H04L25/4902
摘要： A PPM transmitter includes an optical clock generator for generating equally-spaced optical pulses with a sampling period T; an encoder for transforming an incoming waveform U(t) into a linear combination V(t) of U(t) and a delayed output V(t−kT) according to a rule V(t)=U(t)+aV(t−kT), where k is a positive integer, V(t) is voltage generated by the encoder and a is a coefficient; and an optical delay generator for delaying optical pulses generated by the optical clock generator in proportion to the voltage V(t), such that Δtn=bV(t), where b is another coefficient and where Δtn is the amount of delay imposed by the optical delay generator. The PPM transmitter functions with a PPM receiver for communicating data without the need to transmit or otherwise provide a clock signal. The PPM receiver decodes an original series of the delayed optical pulses Q(t) and a second series Q(t−ckT) delayed by ckT where c is a coefficient.
摘要翻译： PPM发射机包括用于产生具有采样周期T的等间隔的光脉冲的光时钟发生器; 用于根据规则V（t）= U（t）+ aV（t）将输入波形U（t）变换为U（t）的线性组合V（t）和延迟输出V（t-kT） t-kT），其中k是正整数，V（t）是由编码器产生的电压，a是系数; 以及光延迟发生器，用于与光电时钟发生器产生的光脉冲成比例地延迟电压V（t），使得Deltatn = bV（t），其中b是另一个系数，并且其中Deltatn是由光延迟发生器。 PPM发射机具有用于传送数据的PPM接收机，而不需要传输或以其他方式提供时钟信号。 PPM接收机解码延迟的光脉冲Q（t）的原始序列和延迟ckT的第二序列Q（t-ckT），其中c是系数。

2. 发明授权

US08900896B1 Implantation before epitaxial growth for photonic integrated circuits 有权
标题翻译：光子集成电路外延生长之前的植入
公开(公告)号：US08900896B1
公开(公告)日：2014-12-02
申请号：US13030094
申请日：2011-02-17
申请人： Yakov Royter , Rajesh D. Rajavel , Irina Ionova , Sophi Ionova
发明人： Yakov Royter , Rajesh D. Rajavel , Stanislav I. Ionov
IPC分类号： H01L21/00
CPC分类号： G02B6/13 , B82Y20/00 , G02F1/01708 , G02F2201/063 , G02F2202/06 , G02F2202/102 , H01L21/2654 , H01S5/026
摘要： Fabrication of a photonic integrated circuit (PIC) including active elements such as a semiconductor optical amplifier (SOA) and passive elements such as a floating rib waveguide. Selective area doping through ion implantation or thermal diffusion before semiconductor epitaxial growth is used in order to define the contact and lateral current transport layers for each active device, while leaving areas corresponding to the passive devices undoped. InP wafers are used as the substrate which may be selectively doped with silicon.
摘要翻译：包括诸如半导体光放大器（SOA）和无源元件（诸如浮动肋波导）的有源元件的光子集成电路（PIC）的制造。使用在半导体外延生长之前通过离子注入或热扩散的选择性区域掺杂以便限定每个有源器件的接触和横向电流传输层，同时留下对应于被动器件未被掺杂的区域。 InP晶片用作可选择性掺杂硅的衬底。

3. 发明授权

US07932512B1 Implantation before epitaxial growth for photonic integrated circuits 有权
标题翻译：光子集成电路外延生长之前的植入
公开(公告)号：US07932512B1
公开(公告)日：2011-04-26
申请号：US11528797
申请日：2006-09-27
申请人： Yakov I. Royter , Rajesh D. Rajavel , Stanislav I. Ionov , Irina Ionova, legal representative , Sophi Ionova, legal representative
发明人： Yakov I. Royter , Rajesh D. Rajavel , Stanislav I. Ionov
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： G02B6/13 , B82Y20/00 , G02F1/01708 , G02F2201/063 , G02F2202/06 , G02F2202/102 , H01L21/2654 , H01S5/026
摘要： Fabrication of a photonic integrated circuit (PIC) including active elements such as a semiconductor optical amplifier (SOA) and passive elements such as a floating rib waveguide. Selective area doping through ion implantation or thermal diffusion before semiconductor epitaxial growth is used in order to define the contact and lateral current transport layers for each active device, while leaving areas corresponding to the passive devices undoped. InP wafers are used as the substrate which may be selectively doped with silicon.
摘要翻译：包括诸如半导体光放大器（SOA）和无源元件（诸如浮动肋波导）的有源元件的光子集成电路（PIC）的制造。使用在半导体外延生长之前通过离子注入或热扩散的选择性区域掺杂以便限定每个有源器件的接触和横向电流传输层，同时留下对应于被动器件未被掺杂的区域。 InP晶片用作可选择性掺杂硅的衬底。

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