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1. 发明授权

US08564493B2 Y-type hexagonal ferrite, fabrication method thereof, and antenna apparatus using the same 有权
标题翻译： Y型六角铁氧体，其制造方法以及使用其的天线装置
公开(公告)号：US08564493B2
公开(公告)日：2013-10-22
申请号：US12844059
申请日：2010-07-27
申请人： Joong Hee Lee , Young Ho Han , Il Jeong Park
发明人： Joong Hee Lee , Young Ho Han , Il Jeong Park
IPC分类号： H01Q1/00 , H01F1/34
CPC分类号： H01Q1/38 , C01G49/0018 , C01G49/009 , C01G51/006 , C01P2006/10 , C01P2006/42 , C03C8/02
摘要： A method of making Y-type hexagonal ferrite and an antenna using the same are provided. Y-type hexagonal ferrite includes a base ferrite composed of iron oxide, barium carbonate and cobalt oxide, and silicate glass ranging from 0.5 to 5 weight percent added to 100 weight percent of base ferrite. An antenna apparatus includes a magnetic carrier and an antenna pattern formed thereon. The magnetic carrier is formed of such Y-type hexagonal ferrite, and the antenna pattern resonates in a specific frequency band when electric power is supplied. To fabricate the Y-type hexagonal ferrite, a calcination process is performed in which iron oxide, barium carbonate and cobalt oxide are combined into base ferrite at a given calcination temperature after being mixed. A sintering process is performed to sinter the base ferrite and the silicate glass at a given sintering temperature which is lower than the calcination temperature after adding the silicate glass to the base ferrite.
摘要翻译：提供制造Y型六角铁氧体的方法和使用其的天线。 Y型六角铁氧体包括由氧化铁，碳酸钡和氧化钴组成的基础铁氧体，和添加至基重铁氧体100重量％的0.5至5重量％的硅酸盐玻璃。天线装置包括形成在其上的磁性载体和天线图案。磁性载体由这种Y型六角铁氧体形成，并且当供电时天线图案在特定频带内谐振。为了制造Y型六方晶系铁氧体，在混合后，在给定的煅烧温度下进行氧化铁，碳酸钡，氧化钴与碱铁氧体组合的烧成工序。在将硅酸盐玻璃添加到基体铁氧体之后，进行烧结工序，烧结基体铁氧体和硅酸盐玻璃，烧结温度比煅烧温度低。

2. 发明申请

US20110025572A1 Y-TYPE HEXAGONAL FERRITE, FABRICATION METHOD THEREOF, AND ANTENNA APPARATUS USING THE SAME 有权
标题翻译： Y型六角铁矿，其制造方法和使用其的天线装置
公开(公告)号：US20110025572A1
公开(公告)日：2011-02-03
申请号：US12844059
申请日：2010-07-27
申请人： Joong Hee LEE , Young Ho HAN , Il Jeong PARK
发明人： Joong Hee LEE , Young Ho HAN , Il Jeong PARK
IPC分类号： H01Q1/00 , C03C14/00
CPC分类号： H01Q1/38 , C01G49/0018 , C01G49/009 , C01G51/006 , C01P2006/10 , C01P2006/42 , C03C8/02
摘要： A method of making Y-type hexagonal ferrite and an antenna using the same are provided. Y-type hexagonal ferrite includes a base ferrite composed of iron oxide, barium carbonate and cobalt oxide, and silicate glass ranging from 0.5 to 5 weight percent added to 100 weight percent of base ferrite. An antenna apparatus includes a magnetic carrier and an antenna pattern formed thereon. The magnetic carrier is formed of such Y-type hexagonal ferrite, and the antenna pattern resonates in a specific frequency band when electric power is supplied. To fabricate the Y-type hexagonal ferrite, a calcination process is performed in which iron oxide, barium carbonate and cobalt oxide are combined into base ferrite at a given calcination temperature after being mixed. A sintering process is performed to sinter the base ferrite and the silicate glass at a given sintering temperature which is lower than the calcination temperature after adding the silicate glass to the base ferrite.
摘要翻译：提供制造Y型六角铁氧体的方法和使用其的天线。 Y型六角铁氧体包括由氧化铁，碳酸钡和氧化钴组成的基础铁氧体，和添加至基重铁氧体100重量％的0.5至5重量％的硅酸盐玻璃。天线装置包括形成在其上的磁性载体和天线图案。磁性载体由这种Y型六角铁氧体形成，并且当供电时天线图案在特定频带内谐振。为了制造Y型六方晶系铁氧体，在混合后，在给定的煅烧温度下进行氧化铁，碳酸钡，氧化钴与碱铁氧体组合的烧成工序。在将硅酸盐玻璃添加到基体铁氧体之后，进行烧结工序，烧结基体铁氧体和硅酸盐玻璃，烧结温度比煅烧温度低。

3. 发明授权

US06325676B1 Gas etchant composition and method for simultaneously etching silicon oxide and polysilicon, and method for manufacturing semiconductor device using the same 有权
标题翻译：用于同时蚀刻氧化硅和多晶硅的气体蚀刻剂组成和方法，以及使用其制造半导体器件的方法
公开(公告)号：US06325676B1
公开(公告)日：2001-12-04
申请号：US09534971
申请日：2000-03-27
申请人： Kwang Jin Jung , Il Jeong Park
发明人： Kwang Jin Jung , Il Jeong Park
IPC分类号： H01L2100
CPC分类号： H01L28/91 , H01L21/31055 , H01L21/31116 , H01L21/32115 , H01L21/32137 , H01L27/10814 , H01L28/84
摘要： A gas etchant composition and a method for simultaneously etching-back silicon oxide and polysilicon at substantially similar etching rates are used for manufacturing semiconductor devices. The gas etchant composition to be utilized for dry-etching includes carbon tetrafluoride gas and nitrogen gas mixed at a ratio of 25-40:1, while its etching rate ratio of polysilicon to silicon oxide is 0.8-1.2:1. Since polysilicon and silicon oxide are simultaneously etched by a single etching equipment utilizing the gas etchant composition in a single process, a composite layer having both polysilicon and silicon oxide can be effectively removed to obtain a resulting surface having a good profile. As a result, the formation of a polysilicon bridge caused by detachments of polysilicon particles in subsequent manufacturing processes can be prevented.
摘要翻译：用于制造半导体器件的气体蚀刻剂组合物和用于以基本相似的蚀刻速率同时蚀刻硅氧化物和多晶硅的方法。用于干蚀刻的气体蚀刻剂组合物包括以25-40:1的比例混合的四氟化碳气体和氮气，而多晶硅与氧化硅的蚀刻速率比为0.8-1.2:1。由于通过在单一工艺中利用气体蚀刻剂组合物的单一蚀刻设备同时蚀刻多晶硅和氧化硅，所以可以有效地去除具有多晶硅和氧化硅的复合层，以获得具有良好外形的所得表面。结果，可以防止在随后的制造工艺中由多晶硅颗粒分离引起的多晶硅桥的形成。

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