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1. 发明授权

US08354533B2 Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer 有权
标题翻译：含氮杂芳族配体 - 过渡金属配合物，包含络合物的缓冲层和包含缓冲层的有机薄膜晶体管
公开(公告)号：US08354533B2
公开(公告)日：2013-01-15
申请号：US13200321
申请日：2011-09-23
申请人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
发明人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
IPC分类号： C07F1/12 , H01L51/50
CPC分类号： C07F1/005 , H01L51/0084 , H01L51/102 , Y02E10/549 , Y10T428/26
摘要： Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same.
摘要翻译：示例性实施方案提供含氮杂芳族配体 - 过渡金属络合物，包含络合物的缓冲层，其可以改善电荷的注入和输送，有机薄膜晶体管和包括缓冲层的电子器件，其中注入的电子或空穴，并且层之间的电荷的传输被加速，从而提高其效率，及其制造方法。

2. 发明授权

US08114704B2 Method for fabricating an organic thin film transistor 有权
标题翻译：制造有机薄膜晶体管的方法
公开(公告)号：US08114704B2
公开(公告)日：2012-02-14
申请号：US12379856
申请日：2009-03-03
申请人： Do Hwan Kim , Hyun Sik Moon , Byung Wook Yoo , Sang Yoon Lee , Bang Lin Lee , Jeong Il Park , Eun Jeong Jeong
发明人： Do Hwan Kim , Hyun Sik Moon , Byung Wook Yoo , Sang Yoon Lee , Bang Lin Lee , Jeong Il Park , Eun Jeong Jeong
IPC分类号： H01L51/40
CPC分类号： H01L51/0533
摘要： Disclosed herein are a method for fabricating an organic thin film transistor, including treating the surfaces of a gate insulating layer and source/drain electrodes with a self-assembled monolayer (SAM)-forming compound through a one-pot reaction, and an organic thin film transistor fabricated by the method. According to example embodiments, the surface-treatment of the gate insulating layer and the source/drain electrodes may be performed in a single vessel through a single process.
摘要翻译：本文公开了一种用于制造有机薄膜晶体管的方法，包括通过一锅反应用自组装单层（SAM）形成化合物处理栅极绝缘层和源极/漏极的表面，以及有机薄膜通过该方法制造的薄膜晶体管。根据示例实施例，栅极绝缘层和源极/漏极的表面处理可以通过单个工艺在单个容器中进行。

3. 发明申请

US20080197346A1 Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer 有权
标题翻译：含氮杂芳族配体 - 过渡金属配合物，包含络合物的缓冲层和包含缓冲层的有机薄膜晶体管
公开(公告)号：US20080197346A1
公开(公告)日：2008-08-21
申请号：US11980349
申请日：2007-10-31
申请人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
发明人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
IPC分类号： H01L51/30 , C07F1/12
CPC分类号： C07F1/005 , H01L51/0084 , H01L51/102 , Y02E10/549 , Y10T428/26
摘要： Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same.
摘要翻译：示例性实施方案提供含氮杂芳族配体 - 过渡金属络合物，包含络合物的缓冲层，其可以改善电荷的注入和输送，有机薄膜晶体管和包括缓冲层的电子器件，其中注入的电子或空穴，并且层之间的电荷的传输被加速，从而提高其效率，及其制造方法。

4. 发明申请

US20060237869A1 Method for producing a fiber for an artificial hair by polyvinyl chloride/acryl-copolymer blends 审中-公开
标题翻译：通过聚氯乙烯/丙烯酸 - 共聚物共混物制造人造毛发纤维的方法
公开(公告)号：US20060237869A1
公开(公告)日：2006-10-26
申请号：US11407410
申请日：2006-04-19
申请人： Hyun-Sik Moon , Jee-Won Park
发明人： Hyun-Sik Moon , Jee-Won Park
IPC分类号： D01D5/30
CPC分类号： D01F6/48 , A41G3/0083 , D01D5/088 , D01D5/098 , D01F1/10 , D01F6/54
摘要： The present invention relates to a method for producing a fiber for an artificial hair comprising: (a) pre-mixing a polyvinyl chloride resin mixture which contain 90 to 96% by weight of a polyvinyl chloride resin, 3 to 7% by weight of a stabilizer and 1 to 3% by weight of a lubricant at 90 to 140° C., mixing 20 to 80% by weight of a polyvinyl chloride resin mixture and 20 to 80% by weight of acryl-copolymer to obtain a polyvinyl chloride/acryl-copolymer blends composition; (b) melt-extruding said mixed resin composition through an extruder at 100 to 210° C. to obtain a pellet; (c) inputting said pellet into an spinning machine, melt-spinning at 150 to 220° C. to obtain filament; (d) drawing said melt-spinned filament to have a fineness of 20 to 100 denier; and (e) passing said drawn filament through heat-setting machine of 100 to 150° C. to fix the property of the filament.
摘要翻译：本发明涉及一种人造毛发纤维的制造方法，其特征在于：（a）预先混合含有90〜96重量％的聚氯乙烯树脂的聚氯乙烯树脂混合物，3〜7重量％稳定剂和1至3重量％的润滑剂，在90至140℃下，混合20至80重量％的聚氯乙烯树脂混合物和20至80重量％的丙烯酸共聚物，得到聚氯乙烯/丙烯酸酯 - 共聚物混合物组成; （b）通过挤出机在100-210℃熔融挤出所述混合树脂组合物以获得颗粒; （c）将所述颗粒输入纺丝机中，在150-220℃熔融纺丝以获得长丝; （d）拉伸熔融纺丝的细丝，其细度为20至100旦尼尔; 和（e）将所拉伸的细丝通过热定型机100至150℃以固定丝的性质。

5. 发明授权

US08362471B2 Aromatic enediyne derivative, organic semiconductor thin film, electronic device and methods of manufacturing the same 有权
标题翻译：芳香族烯衍生物，有机半导体薄膜，电子器件及其制造方法
公开(公告)号：US08362471B2
公开(公告)日：2013-01-29
申请号：US12929078
申请日：2010-12-29
申请人： Eun Jeong Jeong , Hyun Sik Moon , Jeong Ii Park , Sang Yoon Lee
发明人： Eun Jeong Jeong , Hyun Sik Moon , Jeong Ii Park , Sang Yoon Lee
IPC分类号： H01L35/24
CPC分类号： H01L51/0056 , C07D495/04 , C07F7/0812 , H01L51/0058 , H01L51/0074 , H01L51/0094 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： Disclosed are a novel aromatic enediyne derivative, an organic semiconductor thin film using the same, and an electronic device. Example embodiments pertain to an aromatic enediyne derivative which enables the formation of a chemically and electrically stable and reliable semiconductor thin film using a solution process, e.g., spin coating and/or spin casting, at about room temperature when applied to devices, an organic semiconductor thin film using the same, and an electronic device including the organic semiconductor thin film. A thin film having a relatively large area may be formed through a solution process, therefore simplifying the manufacturing process and decreasing the manufacturing cost. Moreover, it is possible to provide an organic semiconductor that may be effectively applied to various fields including organic thin film transistors, electroluminescent devices, solar cells, and memory.
摘要翻译：公开了一种新型芳族烯二炔衍生物，使用其的有机半导体薄膜和电子器件。示例性实施方案涉及芳族烯二炔衍生物，其能够在施加到器件时在大约室温下使用溶液方法（例如旋涂和/或旋转浇铸）形成化学和电稳定且可靠的半导体薄膜，有机半导体使用其的薄膜，以及包括有机半导体薄膜的电子器件。可以通过溶液工艺形成具有相对较大面积的薄膜，从而简化制造工艺并降低制造成本。此外，可以提供可有效地应用于有机薄膜晶体管，电致发光器件，太阳能电池和存储器等各种领域的有机半导体。

6. 发明申请

US20120083069A1 ORGANIC THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20120083069A1
公开(公告)日：2012-04-05
申请号：US13314633
申请日：2011-12-08
申请人： Do Hwan KIM , Jung Seok HAHN , Sang Yoon LEE , Bon Won KOO , Hyun Sik MOON
发明人： Do Hwan KIM , Jung Seok HAHN , Sang Yoon LEE , Bon Won KOO , Hyun Sik MOON
IPC分类号： H01L51/40
CPC分类号： H01L51/0512 , H01L51/0012 , H01L51/0037 , H01L51/0529
摘要： Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device.
摘要翻译：公开了一种有机薄膜晶体管及其制造方法，其中结晶有机粘合剂层位于有机绝缘层和源/漏电极的表面上或源/漏电极的表面上。有机薄膜晶体管可以在有机半导体和绝缘层之间的界面处或在有机半导体层和电极之间的界面处的二维几何晶格匹配和界面稳定性得到改善，从而改善了器件的电性能。

7. 发明授权

US08134145B2 Organic electronic device 有权
标题翻译：有机电子设备
公开(公告)号：US08134145B2
公开(公告)日：2012-03-13
申请号：US11654585
申请日：2007-01-18
申请人： Sang Yoon Lee , Jung Seok Hahn , Kook Min Han , Bon Won Koo , Hyun Sik Moon
发明人： Sang Yoon Lee , Jung Seok Hahn , Kook Min Han , Bon Won Koo , Hyun Sik Moon
IPC分类号： H01L51/30 , H01L51/40
CPC分类号： H01L51/0048 , B82Y10/00 , H01L51/0003 , H01L51/0021 , H01L51/0036 , H01L51/0525 , H01L51/0541 , H01L51/0545 , H01L51/105 , Y02E10/549
摘要： Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.
摘要翻译：公开了一种有机电子器件，其中半导体层和源极/漏极可以由适合于室温湿法的相同类型的材料形成，因此具有彼此相似的表面特性，从而降低接触电阻在半导体层和源极/漏极之间。用于形成半导体层和源/漏电极的材料可以是通过以预定或给定的量向有机半导体材料中添加碳基纳米颗粒而获得的有机半导体型材料。因此，半导体或导体的导电性可以根据碳基纳米颗粒的量而变化。

8. 发明申请

US20120018713A1 Nitrogen-containing heteroaromatic ligand-transition metal complexes, buffer layer comprising the complexes and organic thin film transistor comprising the buffer layer 有权
标题翻译：含氮杂芳族配体 - 过渡金属配合物，包含络合物的缓冲层和包含缓冲层的有机薄膜晶体管
公开(公告)号：US20120018713A1
公开(公告)日：2012-01-26
申请号：US13200321
申请日：2011-09-23
申请人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
发明人： Hyun Sik Moon , Do Hwan Kim , Jong Jin Park , Jung Seok Hahn
IPC分类号： H01L51/30 , B32B7/00 , C07F1/12
CPC分类号： C07F1/005 , H01L51/0084 , H01L51/102 , Y02E10/549 , Y10T428/26
摘要： Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same.
摘要翻译：示例性实施方案提供含氮杂芳族配体 - 过渡金属络合物，包含络合物的缓冲层，其可以改善电荷的注入和输送，有机薄膜晶体管和包括缓冲层的电子器件，其中注入的电子或空穴，并且层之间的电荷的传输被加速，从而提高其效率，及其制造方法。

9. 发明授权

US07884358B2 Aromatic enediyne derivative, organic semiconductor thin film, electronic device and methods of manufacturing the same 有权
公开(公告)号：US07884358B2
公开(公告)日：2011-02-08
申请号：US11806742
申请日：2007-06-04
申请人： Eun Jeong Jeong , Hyun Sik Moon , Jeong Il Park , Sang Yoon Lee
发明人： Eun Jeong Jeong , Hyun Sik Moon , Jeong Il Park , Sang Yoon Lee
IPC分类号： H01L35/24
CPC分类号： H01L51/0056 , C07D495/04 , C07F7/0812 , H01L51/0058 , H01L51/0074 , H01L51/0094 , H01L51/0545 , Y02E10/549 , Y02P70/521
摘要： Disclosed are a novel aromatic enediyne derivative, an organic semiconductor thin film using the same, and an electronic device. Example embodiments pertain to an aromatic enediyne derivative which enables the formation of a chemically and electrically stable and reliable semiconductor thin film using a solution process, e.g., spin coating and/or spin casting, at about room temperature when applied to devices, an organic semiconductor thin film using the same, and an electronic device including the organic semiconductor thin film. A thin film having a relatively large area may be formed through a solution process, therefore simplifying the manufacturing process and decreasing the manufacturing cost. Moreover, it is possible to provide an organic semiconductor that may be effectively applied to various fields including organic thin film transistors, electroluminescent devices, solar cells, and memory.

10. 发明授权

US07763885B2 Organic thin film transistor having surface-modified carbon nanotubes 有权
标题翻译：具有表面改性碳纳米管的有机薄膜晶体管
公开(公告)号：US07763885B2
公开(公告)日：2010-07-27
申请号：US11898977
申请日：2007-09-18
申请人： Kook Min Han , Kyu Yeol In , Jong Jin Park , Hyun Sik Moon , Sang Yoon Lee
发明人： Kook Min Han , Kyu Yeol In , Jong Jin Park , Hyun Sik Moon , Sang Yoon Lee
IPC分类号： H01L51/10
CPC分类号： H01L51/0049 , B82Y10/00 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545 , H01L51/0566 , Y10S977/745
摘要： An organic thin film transistor may comprise an organic semiconductor layer having surface-modified carbon nanotubes and an electrically-conductive polymer. The surfaces of the carbon nanotubes may be modified with curable functional groups, comprising oxirane groups and anhydride groups. A room-temperature solution process may be used to provide a relatively uniform and relatively highly-adhesive organic semiconductor layer in a simple and economical manner. Additionally, the organic thin film transistor having the organic semiconductor layer may have relatively high charge carrier mobility and relatively low threshold voltage.
摘要翻译：有机薄膜晶体管可以包括具有表面改性的碳纳米管和导电聚合物的有机半导体层。碳纳米管的表面可以用可固化官能团改性，包括环氧乙烷基团和酸酐基团。可以使用室温溶液法以简单和经济的方式提供相对均匀且相对高度粘合的有机半导体层。另外，具有有机半导体层的有机薄膜晶体管可以具有相对高的载流子迁移率和相对低的阈值电压。

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