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1. 发明授权

US07989736B2 System for heat treatment of semiconductor device 有权
标题翻译：半导体器件热处理系统
公开(公告)号：US07989736B2
公开(公告)日：2011-08-02
申请号：US11598447
申请日：2006-11-13
申请人： Wang Jun Park , Jung Bae Kim , Young Jae Ahn , Hyoung June Kim , Dong Hoon Shin
发明人： Wang Jun Park , Jung Bae Kim , Young Jae Ahn , Hyoung June Kim , Dong Hoon Shin
IPC分类号： H01L21/02 , F27B9/12 , F27B9/36 , F27B9/39
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67173 , H01L21/67207 , H01L21/67236
摘要： Disclosed is a heat treatment system for semiconductor devices. The heat treatment system is used in a heat treatment process for semiconductor devices, such as a crystallization process for an amorphous silicon thin film or a dopant activation process for a poly-crystalline silicon thin film formed on a surface of a glass substrate of a flat display panel including a liquid crystal display (LCD) or an organic light emitting device (OLED). The heat treatment system transfers a semiconductor device after uniformly preheating the semiconductor device in order to prevent deformation of the semiconductor device during the heat treatment process, rapidly performs the heat treatment process under the high temperature condition by heating the semiconductor device using a lamp heater and induction heat derived from induced electromotive force, and unloads the semiconductor device after uniformly cooling the semiconductor device such that the semiconductor device is prevented from being deformed when the heat treatment process has been finished. The heat treatment system rapidly performs the heat treatment process while preventing deformation of the semiconductor device by gradually heating or cooling the semiconductor device.
摘要翻译：公开了一种用于半导体器件的热处理系统。热处理系统用于半导体器件的热处理工艺，例如非晶硅薄膜的结晶工艺或形成在平坦的玻璃基板的表面上的多晶硅薄膜的掺杂剂活化工艺显示面板包括液晶显示器（LCD）或有机发光器件（OLED）。热处理系统在对半导体器件进行均匀预热之后传递半导体器件，以防止在热处理过程中半导体器件的变形，通过使用灯加热器加热半导体器件，在高温条件下快速地执行热处理工艺，以及由感应电动势产生的感应热，并且在均匀冷却半导体器件之后卸载半导体器件，使得当热处理过程结束时，防止半导体器件变形。热处理系统通过逐渐加热或冷却半导体器件来快速地执行热处理过程，同时防止半导体器件的变形。

2. 发明申请

US20090170248A1 METHOD FOR MANUFACTURING THIN FILM TRANSISTOR 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US20090170248A1
公开(公告)日：2009-07-02
申请号：US12341488
申请日：2008-12-22
申请人： Hyoung June Kim , Dong Hoon Shin , Su Kyoung Lee , Jung Min Lee , Wang Jun Park , Sung Ryoung Ryu , Hoon Kim
发明人： Hyoung June Kim , Dong Hoon Shin , Su Kyoung Lee , Jung Min Lee , Wang Jun Park , Sung Ryoung Ryu , Hoon Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/4908 , H01L27/1277 , H01L29/66757 , H01L29/78675
摘要： A method for manufacturing a thin film transistor with improved current characteristics and high electron mobility. According to the method, when an amorphous silicon thin film is crystallized into a polycrystalline silicon thin film by metal-induced crystallization, annealing conditions of the amorphous silicon thin film and the amount of a metal catalyst doped into the amorphous silicon thin film are optimized to reduce the regions of a metal silicide distributed at grain boundaries of the polycrystalline silicon thin film. In addition, oxygen (O2) gas or water (H2O) vapor is supplied to form a passivation film on the surface of the polycrystalline silicon thin film.
摘要翻译：一种具有改善的电流特性和高电子迁移率的薄膜晶体管的制造方法。根据该方法，当非晶硅薄膜通过金属诱导结晶结晶化为多晶硅薄膜时，非晶硅薄膜的退火条件和掺杂到非晶硅薄膜中的金属催化剂的量被优化为减少分布在多晶硅薄膜的晶界处的金属硅化物的区域。此外，供应氧（O 2）气体或水（H 2 O）蒸气以在多晶硅薄膜的表面上形成钝化膜。

3. 发明授权

US07800726B2 Polarizing plate containing polymer ball mixed anti-glare layer and liquid crystal display using the same 有权
标题翻译：含聚合物球混合防眩光层的偏光板和使用其的液晶显示器
公开(公告)号：US07800726B2
公开(公告)日：2010-09-21
申请号：US11889997
申请日：2007-08-17
申请人： Hyoung June Kim
发明人： Hyoung June Kim
IPC分类号： G02F1/1335
CPC分类号： G02B5/3033 , G02B1/105 , G02B1/14 , G02B5/0215 , G02B5/0221 , G02B5/0242 , G02B5/0278 , G02F1/133502 , G02F1/133528 , G02F2201/50
摘要： A polarizing plate, which can achieve improved brightness with a reduced total-reflection region by appropriately regulating the height or interval of protrusions formed at a surface of the polarizing plate, thereby reducing eye fatigue, and a liquid crystal display device using the polarizing plate are disclosed. The polarizing plate includes a polarizing film, a protective layer formed at a lower surface of the polarizing film, and an anti-glare layer formed at an upper surface of the polarizing film, the anti-glare layer containing a plurality of polymer balls mixed therein such that protrusions, having substantially the same height as one another, are formed at a surface of the anti-glare layer by a predetermined interval.
摘要翻译：一种偏光板，其通过适当地调节形成在偏振片表面的突起的高度或间隔，从而减少眼睛疲劳，从而可以通过减小的全反射区域来实现改善的亮度，以及使用偏振片的液晶显示装置披露偏光板包括偏振膜，形成在偏振膜的下表面的保护层和形成在偏振膜的上表面的防眩层，防眩层含有多个混合在其中的聚合物球使得在防眩层的表面上以预定间隔形成具有彼此基本相同的高度的突起。

4. 发明授权

US07932138B2 Method for manufacturing thin film transistor 有权
标题翻译：制造薄膜晶体管的方法
公开(公告)号：US07932138B2
公开(公告)日：2011-04-26
申请号：US12341488
申请日：2008-12-22
申请人： Hyoung June Kim , Dong Hoon Shin , Su Kyoung Lee , Jung Min Lee , Wang Jun Park , Sung Ryoung Ryu , Hoon Kim
发明人： Hyoung June Kim , Dong Hoon Shin , Su Kyoung Lee , Jung Min Lee , Wang Jun Park , Sung Ryoung Ryu , Hoon Kim
IPC分类号： H01L21/00
CPC分类号： H01L29/4908 , H01L27/1277 , H01L29/66757 , H01L29/78675
摘要： A method for manufacturing a thin film transistor with improved current characteristics and high electron mobility. According to the method, when an amorphous silicon thin film is crystallized into a polycrystalline silicon thin film by metal-induced crystallization, annealing conditions of the amorphous silicon thin film and the amount of a metal catalyst doped into the amorphous silicon thin film are optimized to reduce the regions of a metal silicide distributed at grain boundaries of the polycrystalline silicon thin film. In addition, oxygen (O2) gas or water (H2O) vapor is supplied to form a passivation film on the surface of the polycrystalline silicon thin film.
摘要翻译：一种具有改善的电流特性和高电子迁移率的薄膜晶体管的制造方法。根据该方法，当非晶硅薄膜通过金属诱导结晶结晶化为多晶硅薄膜时，非晶硅薄膜的退火条件和掺杂到非晶硅薄膜中的金属催化剂的量被优化为减少分布在多晶硅薄膜的晶界处的金属硅化物的区域。此外，供应氧（O 2）气体或水（H 2 O）蒸气以在多晶硅薄膜的表面上形成钝化膜。

5. 发明申请

US20080049174A1 Polarizing plate and liquid crystal display device using the same 有权
标题翻译：偏光板和液晶显示装置使用相同
公开(公告)号：US20080049174A1
公开(公告)日：2008-02-28
申请号：US11889997
申请日：2007-08-17
申请人： Hyoung June Kim
发明人： Hyoung June Kim
IPC分类号： G02F1/1335 , G02B5/30
CPC分类号： G02B5/3033 , G02B1/105 , G02B1/14 , G02B5/0215 , G02B5/0221 , G02B5/0242 , G02B5/0278 , G02F1/133502 , G02F1/133528 , G02F2201/50
摘要： A polarizing plate, which can achieve improved brightness with a reduced total-reflection region by appropriately regulating the height or interval of protrusions formed at a surface of the polarizing plate, thereby reducing eye fatigue, and a liquid crystal display device using the polarizing plate are disclosed. The polarizing plate includes a polarizing film, a protective layer formed at a lower surface of the polarizing film, and an anti-glare layer formed at an upper surface of the polarizing film, the anti-glare layer containing a plurality of polymer balls mixed therein such that protrusions, having substantially the same height as one another, are formed at a surface of the anti-glare layer by a predetermined interval.
摘要翻译：一种偏光板，其通过适当地调节形成在偏振片表面的突起的高度或间隔，从而减少眼睛疲劳，从而可以通过减小的全反射区域来实现改善的亮度，以及使用偏振片的液晶显示装置披露偏光板包括偏振膜，形成在偏振膜的下表面的保护层和形成在偏振膜的上表面的防眩层，防眩层含有多个混合在其中的聚合物球使得在防眩层的表面上以预定间隔形成具有彼此基本相同的高度的突起。

6. 发明授权

US06747254B2 Apparatuses for heat-treatment of semiconductor films under low temperature 有权
标题翻译：低温半导体薄膜热处理设备
公开(公告)号：US06747254B2
公开(公告)日：2004-06-08
申请号：US10146504
申请日：2002-05-14
申请人： Hyoung June Kim , Dong Hoon Shin
发明人： Hyoung June Kim , Dong Hoon Shin
IPC分类号： H05B610
CPC分类号： H05B6/105 , H01L21/67109
摘要： The present invention relates to apparatuses for continuous and efficient heat-treatment of semiconductor films upon thermally susceptible non-conducting substrates at a minimum thermal budget, and more particularly, to a polycrystalline silicon thin-film transistors (poly-Si TFTs) and PN diodes on glass substrates for various applications of liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), and solar cells. According to the apparatuses of the present invention, the semiconductor films can be heat-treated without damaging the thermally susceptible substrates: e.g., crystallization of amorphous silicon films at the minimum thermal budget acceptable for the use of glass, enhancing kinetics of dopant activation at the minimum thermal budget acceptable for the use of glass.
摘要翻译：本发明涉及用于在热敏非导电衬底上以最小热预算连续且有效地对半导体膜进行热处理的装置，更具体地说，涉及多晶硅薄膜晶体管（多晶硅TFT）和PN二极管在用于液晶显示器（LCD），有机发光二极管（OLED）和太阳能电池的各种应用的玻璃基板上。根据本发明的装置，可以对半导体膜进行热处理，而不损害热敏基片：例如，在玻璃的使用可接受的最小热预算下，非晶硅薄膜的结晶化，增强在玻璃的掺杂剂激活的动力学玻璃使用的最低热预算可接受。

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