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1. 发明申请

US20150115345A1 VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 审中-公开
标题翻译：垂直存储器件及其制造方法
公开(公告)号：US20150115345A1
公开(公告)日：2015-04-30
申请号：US14519285
申请日：2014-10-21
申请人： Etienne Nowak , Dae-Sin Kim , Hye-Young Kwon , Jae-Ho Kim , Jin-Woo Park , Ji-Woong Sue
发明人： Etienne Nowak , Dae-Sin Kim , Hye-Young Kwon , Jae-Ho Kim , Jin-Woo Park , Ji-Woong Sue
IPC分类号： H01L27/115 , H01L21/31
CPC分类号： H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： A vertical memory device includes a channel, a conductive pattern, gate electrodes, a bit line and a conductive line. A plurality of the channels and the conductive patterns extend in a vertical direction from a top surface of a substrate. The gate electrodes surround outer sidewalls of the channels and the conductive patterns. The gate electrodes are stacked in the vertical direction to be spaced apart from each other. The bit line is electrically connected to the channels. The conductive line is electrically connected to the conductive patterns.
摘要翻译：垂直存储器件包括通道，导电图案，栅电极，位线和导线。多个通道和导电图案从衬底的顶表面沿垂直方向延伸。栅电极围绕通道的外侧壁和导电图案。栅电极在垂直方向上堆叠以彼此间隔开。位线电连接到通道。导线与导电图形电连接。

2. 发明授权

US08823072B2 Floating gate type nonvolatile memory device and related methods of manufacture and operation 有权
标题翻译：浮门式非易失性存储器件及相关制造和操作方法
公开(公告)号：US08823072B2
公开(公告)日：2014-09-02
申请号：US13074219
申请日：2011-03-29
申请人： Jae Ho Kim , Sung-Hwan Jang , Hye-Young Kwon , Sunil Shim , Hyun-Sil Oh
发明人： Jae Ho Kim , Sung-Hwan Jang , Hye-Young Kwon , Sunil Shim , Hyun-Sil Oh
IPC分类号： H01L29/788 , H01L27/115 , H01L29/423
CPC分类号： H01L29/7889 , H01L27/11551 , H01L27/11556 , H01L29/42324
摘要： A floating gate type nonvolatile memory device comprises a semiconductor layer, wordlines crossing over the semiconductor layer, and a memory element disposed between the wordlines and facing the semiconductor layer.
摘要翻译：浮栅型非易失性存储器件包括半导体层，跨越半导体层的字线和设置在字线之间并且面向半导体层的存储元件。

3. 发明申请

US20110211392A1 CELL STRING OF A MEMORY CELL ARRAY AND METHOD OF ERASING THE SAME 审中-公开
标题翻译：存储单元阵列的单元格字符串及其擦除方法
公开(公告)号：US20110211392A1
公开(公告)日：2011-09-01
申请号：US12961647
申请日：2010-12-07
申请人： Jae-Ho Kim , Jae-Kwan Park , Byung-Jun Hwang , Sung-Bo Shim , Hye-Young Kwon
发明人： Jae-Ho Kim , Jae-Kwan Park , Byung-Jun Hwang , Sung-Bo Shim , Hye-Young Kwon
IPC分类号： G11C16/06 , H01L29/788 , H01L29/792 , G11C16/04
CPC分类号： G11C16/16 , G11C16/0408 , G11C16/0483 , H01L27/11521 , H01L27/11524 , H01L27/11568
摘要： A cell string included in a memory cell array of a nonvolatile memory device includes a plurality of memory cells, a string select transistor, and a ground select transistor. The plurality of memory cells are connected in series. The string select transistor is connected between a bitline and the plurality of memory cells, and has a structure substantially the same as a structure of each memory cell. The ground select transistor is connected between the plurality of memory cells and a common source line, and has a structure substantially the same as the structure of each memory cell.
摘要翻译：包括在非易失性存储器件的存储单元阵列中的单元串包括多个存储单元，串选择晶体管和接地选择晶体管。多个存储单元串联连接。串选择晶体管连接在位线和多个存储单元之间，并且具有与每个存储单元的结构基本相同的结构。接地选择晶体管连接在多个存储单元和公共源极线之间，并且具有与每个存储单元的结构基本相同的结构。

4. 发明申请

US20110254069A1 FLOATING GATE TYPE NONVOLATILE MEMORY DEVICE AND RELATED METHODS OF MANUFACTURE AND OPERATION 有权
标题翻译：浮动门类型非易失性存储器件及其相关制造和操作方法
公开(公告)号：US20110254069A1
公开(公告)日：2011-10-20
申请号：US13074219
申请日：2011-03-29
申请人： Jae Ho KIM , Sung-Hwan JANG , Hye-Young KWON , Sunil SHIM , Hyun-Sil OH
发明人： Jae Ho KIM , Sung-Hwan JANG , Hye-Young KWON , Sunil SHIM , Hyun-Sil OH
IPC分类号： H01L29/788
CPC分类号： H01L29/7889 , H01L27/11551 , H01L27/11556 , H01L29/42324
摘要： A floating gate type nonvolatile memory device comprises a semiconductor layer, wordlines crossing over the semiconductor layer, and a memory element disposed between the wordlines and facing the semiconductor layer.
摘要翻译：浮栅型非易失性存储器件包括半导体层，跨越半导体层的字线和设置在字线之间并且面向半导体层的存储元件。

5. 发明授权

US6107396A Method of preparing a composite of organic and inorganic compounds 有权
标题翻译：制备有机和无机化合物复合物的方法
公开(公告)号：US6107396A
公开(公告)日：2000-08-22
申请号：US192864
申请日：1998-11-16
申请人： Ho-jin Kweon , Sung-soo Kim , Dong-gon Park , Jin Kang , Hye-young Kwon
发明人： Ho-jin Kweon , Sung-soo Kim , Dong-gon Park , Jin Kang , Hye-young Kwon
IPC分类号： C08K3/22 , C07C29/70 , C08F2/00 , C08L83/02 , C08J5/05
CPC分类号： C07C29/70
摘要： A method of preparing a composite of organic and inorganic compounds includes the steps of reacting a mixed solution of a metal alkoxide and a silicon-containing compound with a catalyst to produce an alcogel of a metal oxide or a complex metal oxide. The metal alkoxide is prepared by reacting at least one metal with an alcohol and the mixed solution is prepared by mixing the metal alkoxide with the silicon-containing compound. An alcogel is produced from the reacting step and alcohol is impregnated within the inorganic oxide lattice structure of the alcogel. Furthermore, the method of preparing a composite of an organic and an inorganic compound includes the steps of centrifuging the alcogel to separate any alcohol from the alcogel to form a gel, adding an organic monomer the gel and polymerizing the organic monomer in-situ to form an organic polymer. The resulting composite has characteristics of both the parent organic and inorganic compounds.
摘要翻译：制备有机和无机化合物复合物的方法包括使金属醇盐和含硅化合物的混合溶液与催化剂反应以产生金属氧化物或复合金属氧化物的醇酸盐的步骤。金属醇盐通过使至少一种金属与醇反应制备，并且通过将金属醇盐与含硅化合物混合来制备混合溶液。由反应步骤产生酸酐，并将醇浸渍在铝酸盐的无机氧化物晶格结构内。此外，制备有机和无机化合物的复合物的方法包括以下步骤：离心凝胶以从凝胶中分离任何醇以形成凝胶，加入有机单体凝胶并原位聚合有机单体以形成有机聚合物。所得复合材料具有母体有机和无机化合物的特征。

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