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    • 2. 发明授权
    • Array substrate for display device
    • 阵列基板用于显示装置
    • US08785257B2
    • 2014-07-22
    • US12829705
    • 2010-07-02
    • Hee-Dong ChoiHye-Young ChoiDoo-Seok Yang
    • Hee-Dong ChoiHye-Young ChoiDoo-Seok Yang
    • H01L21/00H01L27/12H01L29/786
    • H01L27/1214H01L27/12H01L27/124H01L29/78648
    • Disclosed is array substrate including a pixel region having a switching region, a driving region and a storage region. A switching TFT in the switching region includes a first gate electrode, a first gate insulating layer, a switching active layer on the first gate insulating layer, a switching source electrode on a first switching ohmic contact layer, and a switching drain electrode on a second switching ohmic contact layer; a driving TFT in the driving region is connected to the switching TFT and includes a first gate electrode, a second gate insulating layer, a driving active layer on the second gate insulating layer, a driving source electrode on a first driving ohmic contact layer, and a driving drain electrode on a second driving ohmic contact layer; wherein at least one of the switching and driving TFTs further includes a second gate electrode over the switching or driving active layers.
    • 公开了包括具有开关区域,驱动区域和存储区域的像素区域的阵列基板。 开关区域中的开关TFT包括第一栅极电极,第一栅极绝缘层,第一栅极绝缘层上的开关有源层,第一开关欧姆接触层上的开关源电极和第二栅极绝缘层上的开关漏极电极 开关欧姆接触层; 驱动区域中的驱动TFT连接到开关TFT,并且包括第一栅极电极,第二栅极绝缘层,第二栅极绝缘层上的驱动有源层,第一驱动欧姆接触层上的驱动源极,以及 在第二驱动欧姆接触层上的驱动漏电极; 其中所述开关和驱动TFT中的至少一个还包括位于所述开关或驱动有源层上的第二栅电极。
    • 9. 发明申请
    • ARRAY SUBSTRATE FOR DISPLAY DEVICE
    • 用于显示设备的阵列基板
    • US20110108846A1
    • 2011-05-12
    • US12829705
    • 2010-07-02
    • Hee-Dong ChoiHye-Young ChoiDoo-Seok Yang
    • Hee-Dong ChoiHye-Young ChoiDoo-Seok Yang
    • H01L33/08
    • H01L27/1214H01L27/12H01L27/124H01L29/78648
    • Disclosed is array substrate including a pixel region having a switching region, a driving region and a storage region. A switching TFT in the switching region includes a first gate electrode, a first gate insulating layer, a switching active layer on the first gate insulating layer, a switching source electrode on a first switching ohmic contact layer, and a switching drain electrode on a second switching ohmic contact layer; a driving TFT in the driving region is connected to the switching TFT and includes a first gate electrode, a second gate insulating layer, a driving active layer on the second gate insulating layer, a driving source electrode on a first driving ohmic contact layer, and a driving drain electrode on a second driving ohmic contact layer; wherein at least one of the switching and driving TFTs further includes a second gate electrode over the switching or driving active layers.
    • 公开了包括具有开关区域,驱动区域和存储区域的像素区域的阵列基板。 开关区域中的开关TFT包括第一栅极电极,第一栅极绝缘层,第一栅极绝缘层上的开关有源层,第一开关欧姆接触层上的开关源电极和第二栅极绝缘层上的开关漏极电极 开关欧姆接触层; 驱动区域中的驱动TFT连接到开关TFT,并且包括第一栅极电极,第二栅极绝缘层,第二栅极绝缘层上的驱动有源层,第一驱动欧姆接触层上的驱动源极,以及 在第二驱动欧姆接触层上的驱动漏电极; 其中所述开关和驱动TFT中的至少一个还包括位于所述开关或驱动有源层上的第二栅电极。
    • 10. 发明申请
    • Array substrate for dislay device and method of fabricating the same
    • 阵列衬底及其制造方法
    • US20100289023A1
    • 2010-11-18
    • US12654584
    • 2009-12-23
    • Hee-Dong ChoiKi-Sul ChoHye-Young ChoiDoo-Seok YangByeong-Gyu Roh
    • Hee-Dong ChoiKi-Sul ChoHye-Young ChoiDoo-Seok YangByeong-Gyu Roh
    • H01L33/00H01L21/336
    • H01L27/1288G02F2001/136236H01L21/02532H01L21/02667H01L27/1214H01L27/1218H01L27/124H01L27/3244H01L29/42384H01L29/458H01L29/66765H01L2227/323
    • A method of fabricating an array substrate for a display device includes: forming a buffer layer on a substrate having a pixel region; sequentially forming a gate electrode of impurity-doped polycrystalline silicon, a gate insulating layer and an active layer of intrinsic polycrystalline silicon on the buffer layer in the pixel region; forming an interlayer insulating layer of an inorganic insulating material on the active layer; sequentially forming a source barrier pattern, a source ohmic contact layer and a source electrode on the interlayer insulating layer, sequentially forming a drain barrier pattern, a drain ohmic contact layer and a drain electrode on the interlayer insulating layer, and sequentially forming a first dummy pattern, a second dummy pattern and a data line on the interlayer insulating layer; forming a first passivation layer on a surface of the interlayer insulating layer including the source electrode, the drain electrode and the data line formed thereon; forming a gate line on the first passivation layer; forming a second passivation layer on a surface of the first passivation layer including the gate line formed thereon; and forming a pixel electrode on the second passivation layer.
    • 一种制造用于显示装置的阵列基板的方法包括:在具有像素区域的基板上形成缓冲层; 在像素区域的缓冲层上依次形成杂质掺杂多晶硅的栅电极,栅极绝缘层和本征多晶硅的有源层; 在有源层上形成无机绝缘材料的层间绝缘层; 在层间绝缘层上顺序地形成源极阻挡图案,源极欧姆接触层和源电极,在层间绝缘层上依次形成漏极阻挡图案,漏极欧姆接触层和漏极,并依次形成第一虚拟 图案,第二虚设图案和数据线; 在包括形成在其上的源极电极,漏极电极和数据线的层间绝缘层的表面上形成第一钝化层; 在所述第一钝化层上形成栅极线; 在包括形成在其上的栅极线的第一钝化层的表面上形成第二钝化层; 以及在所述第二钝化层上形成像素电极。