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1. 发明授权

US5283452A Distributed cell monolithic mircowave integrated circuit (MMIC) field-effect transistor (FET) amplifier 失效
标题翻译：分布式电池单片微波集成电路（MMIC）场效应晶体管（FET）放大器
公开(公告)号：US5283452A
公开(公告)日：1994-02-01
申请号：US837448
申请日：1992-02-14
申请人： Yi-Chi Shih , David C. Wang , Huy M. Le , Vincent Hwang , Tom Y. Chi
发明人： Yi-Chi Shih , David C. Wang , Huy M. Le , Vincent Hwang , Tom Y. Chi
IPC分类号： H01L29/417 , H01L29/812
CPC分类号： H01L29/41758
摘要： A distributed cell field-effect transistor (FET) amplifier (40) includes a plurality of parallel, elongated source (46a) and drain (46b) regions of individual FET unit cells (46) formed in a substrate (42) in transverse alternating relation, with a plurality of elongated channel regions (46c) being formed between and parallel to adjacent source (46a) and drain (46b) regions respectively. A source foot (48) and a drain foot (50) extend perpendicular to the source (46a) and drain (46b) regions on opposite longitudinally spaced sides thereof respectively. A gate foot (52) extends parallel to the source (48) and drain (50) feet, between the source foot (48) and the cells (46). Source (54) and drain (56) pads and gate (58) fingers extend from the source (48), drain (50) and gate (52) feet into electrical connection with the respective source (46a), drain (46b) and gate ( 46c) regions respectively. The source pads (54) include airbridge portions (54b) which extend over the gate foot (52) without making contact therewith. A fixed tuning circuit (70) is connected between the gate foot (52) and source foot (48), including an inductive stub (72) having a first end connected to the gate foot (52) and a second end, and a capacitor (74) having a first plate (74a) which is integral with the source foot (48) and a second plate connected to the second end of the stub (72). The integration of the capacitor (74) with the source foot (48) enables the amplifier (40) to be tuned at the gate foot (52), thereby eliminating undesirable coupling effects and the need for a separate via for the tuning circuit (70).
摘要翻译：分布式单元场效应晶体管（FET）放大器（40）包括以横向交替关系形成在基板（42）中的单个FET单元（46）的多个平行细长源（46a）和漏极（46b），其中多个细长沟道区（46c）分别形成在平行于相邻源（46a）和漏极（46b）之间并且平行于漏极（46b）区域。源脚（48）和排水脚（50）分别垂直于源（46a）和相对的纵向间隔开的排出（46b）区域延伸。门脚（52）平行于源脚（48）和细胞（46）之间的源极（48）和漏极（50）脚延伸。源极（54）和漏极（56）焊盘和栅极（58）指状物从源极（48），漏极（50）和栅极（52）脚延伸到与相应源极（46a），漏极（46b）和门（46c）区域。源极焊盘（54）包括在栅极（52）上延伸而不与其接触的气桥部分（54b）。固定调谐电路（70）连接在栅极脚（52）和源脚（48）之间，包括具有连接到栅极脚（52）的第一端和第二端的电感短截线（72），以及电容器（74）具有与源脚（48）成一体的第一板（74a）和连接到短截线（72）的第二端的第二板。电容器（74）与源极（48）的集成使得放大器（40）能够在栅极脚（52）处被调谐，从而消除不期望的耦合效应，并且需要用于调谐电路（70）的单独的通孔）。

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