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1. 发明授权

US07282744B2 III-nitride optoelectronic device structure with high Al AlGaN diffusion barrier 有权
标题翻译：具有高Al AlGaN扩散阻挡层的III族氮化物光电子器件结构
公开(公告)号：US07282744B2
公开(公告)日：2007-10-16
申请号：US10840515
申请日：2004-05-06
申请人： Jeffrey S. Flynn , Huoping Xin , George R. Brandes
发明人： Jeffrey S. Flynn , Huoping Xin , George R. Brandes
IPC分类号： H01L29/22
CPC分类号： H01L33/32 , H01L33/02
摘要： A III-nitride electronic device structure including doped material, an active region and a barrier material arranged to suppress transport of dopant from the doped material into the active region, wherein the barrier material comprises high-Al content AlxGayN, wherein x+y=1, and x≧0.50. In a specific aspect, AIN is used as a migration/diffusion barrier layer at a thickness of from about 5 to about 200 Angstroms, to suppress flux of magnesium and/or silicon dopant material into the active region of the III-nitride electronic device, e.g., a UV LED optoelectronic device.
摘要翻译：一种III族氮化物电子器件结构，包括掺杂材料，有源区和阻挡材料，其被布置成抑制掺杂剂从掺杂材料转移到有源区中，其中阻挡材料包括高Al含量的Al x 其中x + y = 1，x> = 0.50。在一个具体方面，将AIN用作厚度为约5至约200埃的迁移/扩散阻挡层，以抑制镁和/或硅掺杂剂材料流入III族氮化物电子器件的有源区，例如，UV LED光电器件。

2. 发明申请

US20070029541A1 High efficiency light emitting device 审中-公开
标题翻译：高效率发光装置
公开(公告)号：US20070029541A1
公开(公告)日：2007-02-08
申请号：US11196856
申请日：2005-08-04
申请人： Huoping Xin , Xingquan Liu , Xiaohong Shi , Chan Choi , Jin Song
发明人： Huoping Xin , Xingquan Liu , Xiaohong Shi , Chan Choi , Jin Song
IPC分类号： H01L31/109
CPC分类号： H01L33/32 , H01L33/007 , H01L33/04 , H01L33/22 , H01L33/44
摘要： A highly efficient III-nitride/II-Oxide light emitting device that has a n++-tunneling layer, which comprises at least one material selected from a group consisting of n++-GaN, n++-InGaN, n++-AlGaN, n++-AlGaInN, n++-ZnO, n++-ZnCdO, n++-ZnMgO, n++-ZnMgCdO, that is deposited on top of the p-layer in a LED structure. After that, a top n-layer is deposited above that n++-tunneling layer that may be a n+-layer and comprises at least one material selected from a group consisting of n+-GaN, n+-InGaN, n+-AlGaN, n+-AlGaInN, n+-ZnO, n+-ZnCdO, n+-ZnMgO, n+-ZnMgCdO or a top n-layer may also be a n++-layer and comprises at least one material selected from a group consisting of n++-GaN, n++-InGaN, n++-AlGaN, n++-AlGaInN, n++-ZnO, n++-ZnCdO, n++-ZnMgO, n++-ZnMgCdO so that the top n-layer is made highly conductive and show very rough surface.
摘要翻译：一种高效III族氮化物/ II型氧化物发光器件，其具有包含至少一种选自由以下组成的组的至少一种材料：n + > -GaN，n ++，-InGaN，n ++，-AlGaN，n + ++，-AlGaInN，n + / SUP→-ZnO，n ++ ++ -ZnCdO，n ++ ++ -ZnMgO，n ++ ++ -ZnMgCdO，其被沉积在顶部的LED结构中的p层。之后，顶层n层被沉积在可以是“+”层的n + + + + - 穿孔层之上，并且包括至少一种选自以下的材料：的n + +， - ，N +， - ， - ，N +， - ， - ，N + -ZnO，n + + -ZnCdO，n + + -ZnMgO，n + + -ZnMgCdO或顶部n 层也可以是++层，并且包括从由n +++++++++++++++++++++++++组成的组中的至少一种材料， SUP→-InGaN，n ++ -AlGaN，n ++ ++ AlGaInN，n ++ ++，n ++ ++ ++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++++ -ZnCdO，n ++ -ZnMgO，n ++ ++ -ZnMgCdO，使得顶部n层被制成高导电性并且表现出非常粗糙的表面。

3. 发明申请

US20060160345A1 Innovative growth method to achieve high quality III-nitride layers for wide band gap optoelectronic and electronic devices 审中-公开
标题翻译：创新的生长方法，为宽带隙光电子器件实现高质量的III族氮化物层
公开(公告)号：US20060160345A1
公开(公告)日：2006-07-20
申请号：US11036081
申请日：2005-01-14
申请人： Xing-Quan Liu , Huoping Xin , Jin Song , Thomas Choo
发明人： Xing-Quan Liu , Huoping Xin , Jin Song , Thomas Choo
IPC分类号： H01L29/22 , H01L21/28 , H01L31/0296
CPC分类号： H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/0262 , H01L33/007
摘要： A method to achieve high quality III-nitride epitaxial layers including AlN, AlGaN, GaN, InGaN, and AlInGaN, by supplying group III precursors constantly and group V precursors periodically with the epitaxial growth systems including metal organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), and molecular beam epitaxy (MBE).
摘要翻译：通过外延生长系统周期性地提供III族前驱体和V族前体来实现包括AlN，AlGaN，GaN，InGaN和AlInGaN的高质量III族氮化物外延层的方法，包括金属有机化学气相沉积（MOCVD），氢化物气相外延（HVPE）和分子束外延（MBE）。

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