专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080220581A1 OPTO-THERMAL ANNEALING METHODS FOR FORMING METAL GATE AND FULLY SILICIDED GATE-FIELD EFFECT TRANSISTORS 有权
标题翻译：用于形成金属门和完全硅化的栅极效应晶体管的光热退火方法
公开(公告)号：US20080220581A1
公开(公告)日：2008-09-11
申请号：US12120286
申请日：2008-05-14
申请人： Scott D. Allen , Cyril Cabral , Kevin K. Dezfulian , Sunfei Fang , Brian J. Greene , Rajarao Jammy , Christian Lavoie , Zhijiong Luo , Hung Ng , Chun-Yung Sung , Clement H. Wann , Huilong Zhu
发明人： Scott D. Allen , Cyril Cabral , Kevin K. Dezfulian , Sunfei Fang , Brian J. Greene , Rajarao Jammy , Christian Lavoie , Zhijiong Luo , Hung Ng , Chun-Yung Sung , Clement H. Wann , Huilong Zhu
IPC分类号： H01L21/336
CPC分类号： H01L21/268 , H01L21/2686 , H01L21/28079 , H01L21/28088 , H01L21/28097 , H01L21/28176 , H01L21/324 , H01L29/517 , H01L29/665
摘要： An opto-thermal annealing method for forming a field effect transistor uses a reflective metal gate so that electrical properties of the metal gate and also interface between the metal gate and a gate dielectric are not compromised when opto-thermal annealing a source/drain region adjacent the metal gate. Another opto-thermal annealing method may be used for simultaneously opto-thermally annealing: (1) a silicon layer and a silicide forming metal layer to form a fully silicided gate; and (2) a source/drain region to form an annealed source/drain region. An additional opto-thermal annealing method may use a thermal insulator layer in conjunction with a thermal absorber layer to selectively opto-thermally anneal a silicon layer and a silicide forming metal layer to form a fully silicide gate.
摘要翻译：用于形成场效应晶体管的光热退火方法使用反射金属栅极，使得当相邻的源极/漏极区域进行光热退火时，金属栅极的电特性以及金属栅极和栅极电介质之间的界面不受损害金属门。另一种光热退火方法可以用于同时光热退火：（1）硅层和形成硅化物的金属层以形成完全硅化的栅极; 和（2）源/漏区以形成退火的源/漏区。附加的光热退火方法可以使用与热吸收层结合的热绝缘层来选择性地使硅层和形成硅化物的金属层光退火以形成完全硅化物栅极。

2. 发明授权

US07410852B2 Opto-thermal annealing methods for forming metal gate and fully silicided gate field effect transistors 有权
标题翻译：用于形成金属栅极和全硅化栅场效应晶体管的光热退火方法
公开(公告)号：US07410852B2
公开(公告)日：2008-08-12
申请号：US11408522
申请日：2006-04-21
申请人： Scott D. Allen , Cyril Cabral, Jr. , Kevin K. Dezfulian , Sunfei Fang , Brian J. Greene , Rajarao Jammy , Christian Lavoie , Zhijiong Luo , Hung Ng , Chun-Yung Sung , Clement H. Wann , Huilong Zhu
发明人： Scott D. Allen , Cyril Cabral, Jr. , Kevin K. Dezfulian , Sunfei Fang , Brian J. Greene , Rajarao Jammy , Christian Lavoie , Zhijiong Luo , Hung Ng , Chun-Yung Sung , Clement H. Wann , Huilong Zhu
IPC分类号： H01L21/8234 , H01L21/42
CPC分类号： H01L21/268 , H01L21/2686 , H01L21/28079 , H01L21/28088 , H01L21/28097 , H01L21/28176 , H01L21/324 , H01L29/517 , H01L29/665
摘要： An opto-thermal annealing method for forming a field effect transistor uses a reflective metal gate so that electrical properties of the metal gate and also interface between the metal gate and a gate dielectric are not compromised when opto-thermal annealing a source/drain region adjacent the metal gate. Another opto-thermal annealing method may be used for simultaneously opto-thermally annealing: (1) a silicon layer and a silicide forming metal layer to form a fully silicided gate; and (2) a source/drain region to form an annealed source/drain region. An additional opto-thermal annealing method may use a thermal insulator layer in conjunction with a thermal absorber layer to selectively opto-thermally anneal a silicon layer and a silicide forming metal layer to form a fully silicide gate.
摘要翻译：用于形成场效应晶体管的光热退火方法使用反射金属栅极，使得当相邻的源极/漏极区域进行光热退火时，金属栅极的电特性以及金属栅极和栅极电介质之间的界面不受损害金属门。另一种光热退火方法可以用于同时光热退火：（1）硅层和形成硅化物的金属层以形成完全硅化的栅极; 和（2）源/漏区以形成退火的源/漏区。附加的光热退火方法可以使用与热吸收层结合的热绝缘体层来选择性地使硅层和形成硅化物的金属层光退火以形成完全硅化物栅极。

3. 发明申请

US20050104095A1 Method and structure to use an etch resistant liner on transistor gate structure to achieve high device performance 有权
标题翻译：在晶体管栅极结构上使用耐蚀刻衬里以实现高器件性能的方法和结构
公开(公告)号：US20050104095A1
公开(公告)日：2005-05-19
申请号：US10713227
申请日：2003-11-13
申请人： Hung Ng , Haining Yang
发明人： Hung Ng , Haining Yang
IPC分类号： H01L27/04 , H01L21/302 , H01L21/336 , H01L21/822 , H01L21/8234 , H01L27/06 , H01L29/78 , H01L29/80
CPC分类号： H01L29/665 , H01L21/823418 , H01L21/823443 , H01L21/823468 , H01L27/0629 , H01L29/6656
摘要： An etch resistant liner covering sidewalls of a transistor gate stack and along a portion of the substrate at a base of the transistor gate stack. The liner prevents silicide formation on the sidewalls of the gate stack, which may produce electrical shorting, and determines the location of silicide formation within source and drain regions within the substrate at the base of the transistor gate stack. The liner also covers a resistor gate stack preventing silicide formation within or adjacent to the resistor gate stack.
摘要翻译：覆盖晶体管栅极叠层的侧壁并且沿晶体管栅极堆叠的基极的衬底的一部分覆盖的耐蚀刻衬里。衬垫防止在栅堆叠的侧壁上形成硅化物，这可能产生电短路，并且确定在晶体管栅极堆叠的基极处的衬底内的源极和漏极区内的硅化物形成的位置。衬套还覆盖阻止在电阻器栅极叠层内或邻近电阻器栅叠层形成硅化物的电阻器栅极堆叠。

4. 发明授权

US06665782B2 Method and apparatus for preventing unauthorized access of memory devices 有权
标题翻译：用于防止存储设备的未授权访问的方法和装置
公开(公告)号：US06665782B2
公开(公告)日：2003-12-16
申请号：US09931430
申请日：2001-08-16
申请人： Louis Bennie Capps, Jr. , Scott Leonard Daniels , Danny Marvin Neal , Yat Hung Ng
发明人： Louis Bennie Capps, Jr. , Scott Leonard Daniels , Danny Marvin Neal , Yat Hung Ng
IPC分类号： G06F1200
CPC分类号： G06F21/79 , G06F21/85 , G11C7/24
摘要： A method and apparatus for preventing unauthorized access to data stored in memory utilizing two programmable logic devices as front end interfaces for the memory device and the data processing device which is to utilize the memory device, respectively. The two programmable logic devices are complementary programmed such that the signal lines between the data processing device and the memory core and/or their timing are scrambled at the interface between the two programmable logic devices, but are properly ordered with the proper timing at the interface between the memory core and the first programmable logic device and the interface between the data processing device and the second programmable logic device.
摘要翻译：一种方法和装置，用于分别使用两个可编程逻辑器件作为用于存储器件的前端接口和要利用该存储器件的数据处理器件，来存储存储在存储器中的数据。两个可编程逻辑器件是互补编程的，使得数据处理器件和存储器核心之间的信号线和/或它们的定时在两个可编程逻辑器件之间的接口处被加扰，但是在接口处适当地按正确的时序排序在存储器核心和第一可编程逻辑器件之间以及数据处理器件和第二可编程逻辑器件之间的接口。

5. 外观设计

USD415011S Door handle with lock 失效
公开(公告)号：USD415011S
公开(公告)日：1999-10-12
申请号：US76514
申请日：1997-09-12
申请人： Samuel Kim-Hung Ng
设计人： Samuel Kim-Hung Ng

6. 发明申请

US20190053096A1 CARRIER AGGREGATION 审中-公开
公开(公告)号：US20190053096A1
公开(公告)日：2019-02-14
申请号：US15752327
申请日：2016-08-12
申请人： Man-Hung Ng
发明人： Man-Hung Ng
IPC分类号： H04W28/06 , H04W72/04 , H04W88/10
摘要： Network nodes and methods for performing carrier aggregation in a wireless telecommunications network are disclosed. The method is for allocating resource blocks to support carrier aggregation communication between network nodes of a wireless telecommunications network and comprises: allocating first uplink resource blocks within at least one uplink band for use by an N uplink primary component carrier; and allocating second uplink resource blocks within at least one uplink band for use by at least one uplink secondary component carrier, the first uplink resource blocks allocated for use by the uplink primary component carrier being allocated from resource blocks within the at least one uplink band which are closer to resource blocks within at least one downlink band than the second uplink resource blocks allocated for use by the at least one uplink secondary component carrier.

7. 外观设计

USD556138S1 Changeable plugs system 有权
标题翻译：可更换插头系统
公开(公告)号：USD556138S1
公开(公告)日：2007-11-27
申请号：US29269566
申请日：2006-12-04
申请人： Yuk Hung Ng
设计人： Yuk Hung Ng

8. 发明授权

US07223126B2 Plug device with a plug adapter 有权
标题翻译：插头设备与插头适配器
公开(公告)号：US07223126B2
公开(公告)日：2007-05-29
申请号：US10849112
申请日：2004-05-20
申请人： Yuk Hung Ng
发明人： Yuk Hung Ng
IPC分类号： H01R25/00
CPC分类号： H01R31/06 , H01R13/6666
摘要： A plug device for fitting into a country specific electrical wall socket comprises a base part and at least one country specific electrical plug adapter, able to be secured to the base part, for fitting into the country specific line socket. The at least one plug adapter may be locked without using tools in an assembled state with a locking means and released from the base part after unlocking the locking means.
摘要翻译：用于装配到国家专用电壁插座的插头装置包括基座部分和至少一个能够固定到基部的国家专用电插头适配器，用于装配到国家专用插座中。所述至少一个插头适配器可以在组装状态下使用锁定装置而不使用工具被锁定，并且在解锁所述锁定装置之后从所述基座部件释放。

9. 发明授权

US06934852B2 Security keys for enhanced downstream access security for electronic file systems and drives 有权
标题翻译：用于电子文件系统和驱动器增强的下游访问安全性的安全密钥
公开(公告)号：US06934852B2
公开(公告)日：2005-08-23
申请号：US09732810
申请日：2000-12-11
申请人： Scott Leonard Daniels , Danny Marvin Neal , Yat Hung Ng
发明人： Scott Leonard Daniels , Danny Marvin Neal , Yat Hung Ng
IPC分类号： G06F21/00 , G06F11/30 , G06F12/14 , H04L9/00 , H04L9/32
CPC分类号： G06F21/6218
摘要： A method and system for protecting electronic files from unauthorized access. The drive on which the file is stored is provided with a hardware identification code, which is unique to the drive. An Operating System (OS) extension allows a user to provide a security code required to access a requested drive. OS device driver, working in conjunction with the extension of the OS checks the requested drive to determine if an access code is required, and the drive responds with the security code or a default code. The default code indicates that the drive is globally accessible to users on the system. When a security code is returned, the OS compares the security code to the access code provided and provides the user with access to the drive only when the access code matches the security code.
摘要翻译：一种用于保护电子文件免遭未经授权访问的方法和系统。存储文件的驱动器具有硬盘识别码，该驱动器是驱动器唯一的。操作系统（OS）扩展允许用户提供访问请求的驱动器所需的安全代码。 OS设备驱动程序与OS的扩展一起工作，检查所请求的驱动器以确定是否需要访问代码，并且驱动器使用安全代码或默认代码进行响应。默认代码表示驱动器可全面访问系统上的用户。当返回安全代码时，操作系统将安全代码与提供的访问代码进行比较，只有当访问代码与安全代码相匹配时，才能向用户提供对驱动器的访问权限。

10. 发明授权

US06655996B1 Wall socket with swaged prongs 有权
标题翻译：带插头的墙壁插座
公开(公告)号：US06655996B1
公开(公告)日：2003-12-02
申请号：US10186666
申请日：2002-07-02
申请人： Yuk Hung Ng
发明人： Yuk Hung Ng
IPC分类号： H01R13415
CPC分类号： H01R24/68 , H01R2103/00
摘要： A wall plug device for connecting an electrical appliance to a socket of a power supply system. The device is composed of: a housing having an outer surface and an inner surface and provided with two pairs of passages, each pair including a first passage and a second passage; and two electrical contact prongs, each having a main body portion and a connecting portion, the main body portion extending to a first end of the prong for making electrical contact with the socket outside the housing and the connecting portion extending to a second end of the prong that is remote from the first end. The connecting portion has an anchor element that extends through the first passage of a respective pair of passages and an electrical connection element that extends through the second passage of the respective pair of passages, and the anchor element is deformed from a first configuration in which the anchor element can be inserted through the first passage to a second configuration in which the anchor element is secured in the housing.
摘要翻译：一种用于将电器连接到电源系统的插座的墙壁插头装置。该装置由具有外表面和内表面并具有两对通道的壳体组成，每对通道包括第一通道和第二通道; 和两个电接头，每个具有主体部分和连接部分，主体部分延伸到插脚的第一端，用于与壳体外部的插座电接触，并且连接部分延伸到第二端远离第一端的插脚。连接部分具有延伸通过相应的一对通道的第一通道的锚定元件和延伸穿过相应的一对通道的第二通道的电连接元件，并且锚定元件从第一构造变形，其中锚固元件可以通过第一通道插入到锚定元件固定在壳体中的第二构造。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式