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1. 发明授权

US06828208B2 Method of fabricating shallow trench isolation structure 有权
标题翻译：制造浅沟槽隔离结构的方法
公开(公告)号：US06828208B2
公开(公告)日：2004-12-07
申请号：US10248538
申请日：2003-01-28
申请人： Tsung-De Lin , Hsiao-Kang Wang , Tian-Jue Hong , Shih-Liang Chou , Wen-Cheng Lien
发明人： Tsung-De Lin , Hsiao-Kang Wang , Tian-Jue Hong , Shih-Liang Chou , Wen-Cheng Lien
IPC分类号： H01L2176
CPC分类号： H01L21/76229
摘要： A method of fabricating a shallow trench isolation (STI) structure. A substrate is provided and then a pad oxide layer, a mask layer and a first trench are sequentially formed on the substrate. An insulation layer is formed inside the first trench and over the substrate. The insulation layer has a second trench in a location above the first trench. Thereafter, a conformal cap layer is formed over the insulation layer. The cap layer has a third trench in a location above the second trench. A reverse mask is formed over the cap layer covering the third trench. The cap layer and the insulation layer outside the reverse mask are removed to expose the upper surface of the mask layer. The reverse mask is removed and then the residual insulation layer outside the remaining cap layer and the trench are moved to expose the upper surface of the mask layer. Finally, the mask layer and the pad oxide layer are removed.
摘要翻译：一种制造浅沟槽隔离（STI）结构的方法。提供衬底，然后在衬底上依次形成衬垫氧化物层，掩模层和第一沟槽。在第一沟槽内部和衬底上形成绝缘层。绝缘层在第一沟槽上方的位置具有第二沟槽。此后，在绝缘层上形成保形盖层。盖层在第二沟槽上方的位置具有第三沟槽。在覆盖第三沟槽的覆盖层上形成反向掩模。去除覆盖层和反掩模外部的绝缘层以暴露掩模层的上表面。去除反面掩模，然后移动剩余盖层和沟槽外部的残留绝缘层以暴露掩模层的上表面。最后，去除掩模层和焊盘氧化物层。

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