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1. 发明授权

US06942754B2 Process for producing xylooligosaccharide from lignocellulose pulp 失效
标题翻译：从木质纤维素纸浆中制备低聚木糖的方法
公开(公告)号：US06942754B2
公开(公告)日：2005-09-13
申请号：US10126944
申请日：2002-04-22
申请人： Yoshiya Izumi , Jun Sugiura , Hitoshi Kagawa , Naoya Azumi
发明人： Yoshiya Izumi , Jun Sugiura , Hitoshi Kagawa , Naoya Azumi
IPC分类号： D21C5/00 , D21C9/147 , D21C11/00 , D21H11/20
CPC分类号： D21C9/147 , D21C5/005 , D21C11/0042
摘要： Xylooligosaccharide is produced from a lignocellulose pulp by enzyme-treating a lignocellulose pulp with hemicellulase, filtering the resultant reaction mixture to separate a liquid fraction from the enzyme-treated pulp, subjecting the separated liquid fraction to a permeation treatment through a separation membrane to separate a non-permeated fraction containing xylooligosaccharide-lignin complex with an increased concentration from a permeated fraction, collecting the non-permeated fraction, and separating and recovering xylooligosaccharide from the collected non-permeated fraction.
摘要翻译：木质纤维素纸浆通过用半纤维素酶酶处理木质纤维素纸浆从木质纤维素纸浆中生产，过滤得到的反应混合物以从酶处理的纸浆中分离液体馏分，使分离的液体馏分通过分离膜进行渗透处理，以分离含有来自渗透馏分的浓度增加的低聚木糖 - 木质素复合物的未渗透馏分，收集非渗透馏分，以及从收集的未渗透馏分中分离和回收低聚木糖。

2. 发明授权

US5012478A Monolithic multiple beam semiconductor laser 失效
标题翻译：单片多光束半导体激光器
公开(公告)号：US5012478A
公开(公告)日：1991-04-30
申请号：US412095
申请日：1989-09-25
申请人： Ryo Hattori , Hitoshi Kagawa , Masaki Mori
发明人： Ryo Hattori , Hitoshi Kagawa , Masaki Mori
IPC分类号： H01S3/08 , H01S5/00 , H01S5/028 , H01S5/10 , H01S5/40
CPC分类号： H01S5/4031 , H01S5/028
摘要： A monolithic multiple beam semiconductor laser having a low power and a high power beam. A number of factors in the laser are coordinated in order to assure that both the low and high power beams operate at precisely the same frequency. The front and rear facet reflectances of the respective low and high power cavities are coordinated to each other and to the rated operating power levels of the respective lasers to achieve the same operating frequency from both beams. In a particular example, the low power cavity has front and rear facet reflectivities of 30% and a rated output power of 3 mw. The high power cavity has a rated operating power of 20 mw, a front facet reflectivity of 2%, and a rear facet reflectivity of 60%.
摘要翻译：具有低功率和高功率光束的单片多光束半导体激光器。协调激光器中的许多因素以确保低功率和高功率光束在精确相同的频率下工作。相应的低功率腔和高功率腔的前后面反射率彼此协调，并且相应于相应激光器的额定工作功率水平，从两个光束实现相同的工作频率。在一个特定的例子中，低功率腔的前后面反射率为30％，额定输出功率为3 mw。高功率空腔的额定工作功率为20mw，前端面反射率为2％，后面反射率为60％。

3. 发明授权

US4852112A Semiconductor laser with facet protection film of selected reflectivity 失效
标题翻译：半导体激光器具有选择反射率的面保护膜
公开(公告)号：US4852112A
公开(公告)日：1989-07-25
申请号：US175278
申请日：1988-03-30
申请人： Hitoshi Kagawa , Ryo Hattori
发明人： Hitoshi Kagawa , Ryo Hattori
IPC分类号： H01S5/00 , H01S5/028
CPC分类号： H01S5/028
摘要： A semiconductor laser includes a facet protection film consisting of an Al.sub.2 O.sub.3 film of optical length .lambda./4 and a SiO.sub.2 film of optical length .lambda./4 produced on the Al.sub.2 O.sub.3 film, and the facet reflectivity takes a value with in 21.+-.3%.
摘要翻译：半导体激光器包括由Al 2 O 3膜上产生的光学长度λ/ 4的Al 2 O 3膜和光学长度λ/ 4的SiO 2膜构成的面保护膜，小面反射率取21 +/- 3％。

4. 发明授权

US06824646B2 Process for oxygen bleaching and enzyme treating lignocellulosic pulp with liquid treatment and recovery 失效
标题翻译：氧气漂白和酶处理木质纤维素纸浆的方法，具有液体处理和回收
公开(公告)号：US06824646B2
公开(公告)日：2004-11-30
申请号：US10126946
申请日：2002-04-22
申请人： Yoshiya Izumi , Jun Sugiura , Hitoshi Kagawa , Naoya Azumi
发明人： Yoshiya Izumi , Jun Sugiura , Hitoshi Kagawa , Naoya Azumi
IPC分类号： D21C9147
CPC分类号： D21C5/005 , D21C9/147 , D21C11/0042
摘要： Lignocellulose pulp is bleached by bleaching a pulp in aqueous alkali solution with oxygen and treating the pulp with a hemicellulase, while a liquid fraction delivered from the enzyme treatment step is separated from the hemicellulase treated reaction mixture, and subjected to a penetration treatment through a separation membrane, for example, reverse osmosis membrane, to separate a permeated fraction from a non-permeated fraction; the permeated fraction is fed to the alkali-oxygen bleaching (oxygen delignification) step and is used as a liquid medium of the bleaching system.
摘要翻译：木质纤维素纸浆通过用氧气在碱性水溶液中漂白纸浆并用半纤维素酶处理纸浆而漂白，同时将从酶处理步骤输送的液体馏分与半纤维素酶处理的反应混合物分离，并通过分离进行渗透处理膜，例如反渗透膜，以从非渗透部分分离渗透部分; 将渗透的部分进料到碱 - 氧漂白（氧脱木质）步骤中，并用作漂白体系的液体介质。

5. 发明授权

US5079185A Method of making a semiconductor laser 失效
标题翻译：制造半导体激光的方法
公开(公告)号：US5079185A
公开(公告)日：1992-01-07
申请号：US597782
申请日：1990-10-10
申请人： Hitoshi Kagawa , Tetsuya Yagi
发明人： Hitoshi Kagawa , Tetsuya Yagi
IPC分类号： H01S5/00 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/12 , H01S5/2231 , H01S5/1231 , H01S5/221 , H01S5/32308 , Y10S148/072 , Y10S148/095
摘要： A semiconductor laser includes a groove in a GaAs first current blocking layer, which extends to an Al.sub.x Ga.sub.(1-x) As second clad layer beneath the first blocking layer. The width of the groove periodically changes along the length of the resonator. Over the regions of the first current blocking layer where the groove has a smaller width, a Al.sub.z Ga.sub.(1-z) As second current blocking grating layer is formed. An Al.sub.x Ga.sub.(1-x) As third current blocking layer is disposed on the second current blocking layer and the portions of the first current blocking layer not covered by the second current blocking layer. The variation of the width of the groove is achieved by selective etching in gaseous hydrogen chloride by irradiation with an arsenic molecular beam, or by placing a liquid-phase solvent.

6. 发明授权

US5483095A Optical semiconductor device 失效
标题翻译：光半导体器件
公开(公告)号：US5483095A
公开(公告)日：1996-01-09
申请号：US308254
申请日：1994-09-19
申请人： Hitoshi Kagawa , Koji Yamashita
发明人： Hitoshi Kagawa , Koji Yamashita
IPC分类号： H01L23/28 , H01L21/56 , H01L23/02 , H01L31/0203 , H01L31/0216 , H01S5/00 , H01S5/022 , H01L33/00 , H01L31/12
CPC分类号： H01L33/483 , H01L31/0203 , H01L31/02161 , H01L31/02162 , H01L2224/45144 , H01L2224/48091 , H01S5/02212 , H01S5/02248 , H01S5/02296 , H01S5/0683
摘要： An optical semiconductor device including one of a light responsive semiconductor element, a light emitting semiconductor element, and a light responsive and light emitting semiconductor element, and a package hermetically sealing the semiconductor element. The package includes a window of silicon that selectively transmits light incident on the semiconductor element and emitted from the semiconductor element. The Si window is connected to the package body using a solder that makes a eutectic alloy with silicon. In this structure, since the eutectic alloy is produced at the junction of the Si window and the package body, the junction is not adversely affected by external influences, especially temperature. Further, since the Si window does not transmit light in the visible light region, the inside of the package cannot be seen from the outside through the Si window after fabrication of the device. Therefore, a completed device is not judged as a defective only from an abnormal appearance, whereby the production yield is improved. Further, since the Si window is produced using a conventional Si wafer and an apparatus used in a conventional wafer processing of semiconductor devices, the Si window is produced in a relatively simple process and at low cost.
摘要翻译：包括光响应半导体元件，发光半导体元件和光响应和发光半导体元件中的一个的光学半导体器件，以及密封半导体元件的封装。封装包括硅窗口，其选择性地透射入射在半导体元件上并从半导体元件发射的光。 Si窗口使用与硅形成共晶合金的焊料连接到封装体。在该结构中，由于在Si窗和封装体的接合部处产生共晶合金，所以不会受到外部影响，特别是温度的不利影响。此外，由于Si窗口在可见光区域中不透光，所以在器件制造之后，通过Si窗口不能从外部看到封装的内部。因此，完整的装置不会因异常外观而被判断为有缺陷，从而提高了生产率。此外，由于使用传统的Si晶片和用于半导体器件的常规晶片处理中的装置制造Si窗口，所以以相对简单的工艺和低成本生产Si窗口。

7. 发明授权

US5164951A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：US5164951A
公开(公告)日：1992-11-17
申请号：US718974
申请日：1991-06-21
申请人： Hitoshi Kagawa , Tetsuya Yagi
发明人： Hitoshi Kagawa , Tetsuya Yagi
IPC分类号： H01S5/00 , H01S5/223
CPC分类号： H01S5/2231
摘要： A semiconductor laser device includes a first cladding layer, an active layer, and a second cladding layer with a central ridge on a substrate. A current blocking layer is disposed on the second cladding layer burying the ridge. A contact layer is disposed on the current blocking layer and the ridge. The portion of the second cladding layer adjacent to the active layer has a greater resistivity than a portion of the second cladding layer remote from the active layer, reducing leakage current.
摘要翻译：半导体激光器件包括第一覆层，有源层和在衬底上具有中心脊的第二覆层。电流阻挡层设置在埋设脊的第二覆层上。接触层设置在电流阻挡层和脊上。与活性层相邻的第二包覆层的部分具有比远离有源层的第二包层的部分更大的电阻率，从而减少漏电流。

8. 发明授权

US5469413A Magneto-optic recording system and associated controllable heat source 失效
标题翻译：磁光记录系统及相关可控热源
公开(公告)号：US5469413A
公开(公告)日：1995-11-21
申请号：US178817
申请日：1994-01-07
申请人： Hitoshi Kagawa
发明人： Hitoshi Kagawa
IPC分类号： G11B11/10 , G11B11/105 , G11B11/00
CPC分类号： G11B11/10506 , G11B11/10595
摘要： A magneto-optic recording system writes information into a magneto-optic disc by applying a magnetic field to a selected position on the disc while directing a laser beam onto the disc. The laser beam is amplitude-modulated with a test pulse signal including a number of different amplitude pulses to write the test pulse signal in the disc. The test pulses thus written into the disc are read out and the smallest amplitude test pulse which has been read out from the disc is determined. The smallest amplitude depends on the temperature of the disc. The disc is heated in accordance with the determined smallest amplitude.
摘要翻译：磁光记录系统通过将磁场施加到盘上的选定位置而将激光束引导到盘上来将信息写入磁光盘。激光束用包括多个不同幅度脉冲的测试脉冲信号进行幅度调制，以将测试脉冲信号写入盘中。读出这样写入盘中的测试脉冲，并且确定从光盘读出的最小振幅测试脉冲。最小的幅度取决于光盘的温度。根据确定的最小振幅来加热盘。

9. 发明授权

US4984243A Semiconductor laser device 失效
公开(公告)号：US4984243A
公开(公告)日：1991-01-08
申请号：US387767
申请日：1989-08-01
申请人： Hitoshi Kagawa , Tetsuya Yagi
发明人： Hitoshi Kagawa , Tetsuya Yagi
IPC分类号： H01S5/00 , H01S5/12 , H01S5/22 , H01S5/223 , H01S5/323
CPC分类号： H01S5/12 , H01S5/2231 , H01S5/1231 , H01S5/221 , H01S5/32308 , Y10S148/072 , Y10S148/095
摘要： A semiconductor laser includes a groove in a GaAs first current blocking layer, which extends to an Al.sub.x Ga.sub.(1-x) As second clad layer beneath the first blocking layer. The width of the groove periodically changes along the length of the resonator. Over the regions of the first current blocking layer where the groove has a smaller width, a Al.sub.z Ga.sub.(1-z) As second current blocking grating layer is formed. An Al.sub.x Ga.sub.(1-x) As third current blocking layer is disposed on the second current blocking layer and the portions of the first current blocking layer not covered by the second current blocking layer. The variation of the width of the groove is achieved by selective etching in gaseous hydrogen chloride by irradiation with an arsenic molecular beam, or by selective dissolution in a liquid-phase solvent but not the second current blocking layer.

10. 发明授权

US4769342A Method for making a semiconductor laser by cleaving a cantilever heterostructure 失效
标题翻译：通过切割悬臂异质结构制造半导体激光器的方法
公开(公告)号：US4769342A
公开(公告)日：1988-09-06
申请号：US917678
申请日：1986-10-10
申请人： Tetsuya Yagi , Hitoshi Kagawa
发明人： Tetsuya Yagi , Hitoshi Kagawa
IPC分类号： H01S5/00 , H01L21/304 , H01L21/78 , H01S5/02 , H01S5/026 , H01S5/16 , H01L21/208 , B01J17/00
CPC分类号： H01S5/164 , H01L21/3043 , H01L21/78 , H01S5/0264 , H01S5/0201 , H01S5/0202 , Y10S148/026 , Y10S148/05 , Y10S148/065 , Y10S148/095
摘要： A semiconductor laser device comprises a substrate (7) formed of p type GaAs, a laser diode portion (10) capable of laser oscillation and a monitor photodiode portion (11) capable of photoelectric conversion formed on substrate (7). The laser diode portion (10) and the monitor photodiode portion (11) are both formed of an epitaxial separating layer (6) of p type AlAs, an epitaxial layer group (23) mainly formed of a material of AlGaAs system and an epitaxial window layer (9) formed on a cleavage plane of this epitaxial layer group (23). The cleavage plane of the epitaxial window layer (9) on the side of the laser diode portion (10) constitutes a laser resonator plane (16) for laser light output of said laser diode portion (10) while the cleavage plane of the epitaxial window layer (9) on the monitor photodiode portion (11) constitutes a light receiving plane (17) for receiving the laser light outputted from the laser resonator plane (16).
摘要翻译：半导体激光器件包括由p型GaAs形成的衬底（7），能够激光振荡的激光二极管部分（10）和能够在衬底（7）上形成光电转换的监视器光电二极管部分（11）。激光二极管部分（10）和监视光电二极管部分（11）均由p型AlAs的外延分离层（6），主要由AlGaAs体系的材料形成的外延层组（23）和外延窗层（9）形成在该外延层组（23）的解理面上。激光二极管部分（10）侧的外延窗口层（9）的解理面构成激光二极管部分（10）的激光输出的激光谐振器平面（16），同时外延窗口的解理面监视器光电二极管部分（11）上的层（9）构成用于接收从激光谐振器平面（16）输出的激光的光接收平面（17）。

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