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    • 1. 发明授权
    • Surface acoustic wave device
    • 表面声波装置
    • US5773911A
    • 1998-06-30
    • US901277
    • 1997-07-29
    • Mitsuhiro TanakaMasao TakeuchiKazuhiko YamanouchiHiroyuki Odagawa
    • Mitsuhiro TanakaMasao TakeuchiKazuhiko YamanouchiHiroyuki Odagawa
    • H03H9/02H03H9/145
    • H03H9/02543H03H9/14505
    • A surface acoustic wave device including a piezoelectric substrate having NSPUDT behavior and a directionality reversed electrode structure including positive electrode, negative electrode and floating electrode. Positive and negative electrode fingers each having a width of .lambda./8 are arranged interdigitally at a pitch of .lambda. and floating electrode fingers having a width of 3 .lambda./8 are arranged between successive positive and negative fingers with an edge distance of .lambda./8. A directivity due to NSPUDT behavior of the substrate can be reversed. Positive and negative electrode fingers are arranged interdigitally at a pitch of .lambda. and between successive positive and negative electrode fingers are arranged floating electrode fingers having a reflecting coefficient different from that of the positive and negative electrodes.
    • 包括具有NSPUDT行为的压电基片和包括正极,负极和浮动电极的方向性反转电极结构的表面声波装置。 每个具有λ/ 8宽度的正电极指和负电极指以十字形的间距设置,并且具有3λ/ 8宽度的浮动电极指被布置在连续的正极和负极之间,边缘距离为λ/ 8。 由于衬底的NSPUDT行为引起的方向性可以颠倒。 正电极指和负电极指以叉指间隔地布置,并且连续的正电极指和负电极指之间布置有具有与正极和负极的反射系数不同的反射系数的浮动电极指。
    • 2. 发明授权
    • Surface acoustic wave device
    • 表面声波装置
    • US5698927A
    • 1997-12-16
    • US524060
    • 1995-09-06
    • Mitsuhiro TanakaMasao TakeuchiKazuhiko YamanouchiHiroyuki Odagawa
    • Mitsuhiro TanakaMasao TakeuchiKazuhiko YamanouchiHiroyuki Odagawa
    • H03H9/02H03H9/145H03H9/25H01L41/08
    • H03H9/14505H03H9/02543
    • A surface acoustic wave device including a substrate made of a lithium tetraborate single crystal (Li.sub.2 B.sub.4 O.sub.7) whose cut and propagating direction are determined such that Euler cut angles (.psi., .theta., .phi.) are .psi.=+5.degree..about.-5.degree., .theta.=9.degree..about.29.degree. and 32.degree..about.86.degree. and .phi.=85.degree..about.95.degree., and an electrode structure formed on a surface of the substrate to realize a natural single-phase unidirectional transducer property together with an anisotropy of said substrate. A lithium tetraborate substrate having cut angles of (0.degree., 51.degree., 90.degree.) shows an ideal NSPUDT and a lithium tetraborate substrate having cut angles of (0.degree., 78.degree., 90.degree.) reveals a zero temperature coefficient of delay. A directionality reversed electrode structure or a directionality corrected electrode structure may be advantageously used.
    • 包括由四硼酸锂单晶(Li2B4O7)制成的基板的表面声波装置,其切割和传播方向被确定为使得欧拉切角(psi,θ,phi)为psi = + 5°DIFFANCE -5°,θ= 9°差29°,32°差86°,phi = 85°D 95°,电极结构形成在基板表面上,实现天然单相单向换能器特性以及所述基板的各向异性。 切割角度为(0°,51°,90°)的四硼酸锂基板显示出理想的NSPUDT,切割角度为(0°,78°,90°)的四硼酸锂基板显示零温度延迟系数。 可以有利地使用方向性反转电极结构或方向性校正电极结构。
    • 6. 发明授权
    • Surface acoustic wave functional device
    • 声表面波功能器件
    • US06194808B1
    • 2001-02-27
    • US09230193
    • 2000-01-12
    • Kazuhiko YamanouchiHiroyuki OdagawaWasuke SatoNaohiro KuzeHiromasa Goto
    • Kazuhiko YamanouchiHiroyuki OdagawaWasuke SatoNaohiro KuzeHiromasa Goto
    • H03H925
    • H03H9/02976G06G7/195
    • The surface acoustic wave functional element comprises a semiconductor layer provided on a piezoelectric substrate or a piezoelectric film substrate and makes use of interaction between a surface acoustic wave propagating on the substrate and electrons in the substrate layer, but has the semiconductor layer disposed outside above the propagation path for propagating a surface acoustic wave, comprises a plurality of grating electrodes perpendicularly above and to the propagation path and moreover the semiconductor layer comprises an active layer and a buffer layer lattice-matching thereto. By use of this surface acoustic wave functional element, a surface acoustic wave amplifier capable of providing a high amplification gain at a practical low voltage, a surface acoustic wave convolver having a higher efficiency than ever or the like are offered.
    • 表面声波功能元件包括设置在压电基板或压电膜基板上的半导体层,并且利用在基板上传播的声表面波与基板层中的电子之间的相互作用,但是半导体层设置在 用于传播表面声波的传播路径包括垂直于传播路径上方的多个光栅电极,此外,半导体层包括有源层和与其成晶格匹配的缓冲层。 通过使用这种表面声波功能元件,可以提供在实际的低电压下提供高放大增益的表面声波放大器,具有比以往更高效率的表面声波卷积器等。