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1. 发明授权

US06744074B2 Compound semiconductor light emitting device and method of fabricating the same 失效
标题翻译：化合物半导体发光器件及其制造方法
公开(公告)号：US06744074B2
公开(公告)日：2004-06-01
申请号：US09968802
申请日：2001-10-03
申请人： Hideyoshi Horie , Hirotaka Ohta , Toshinari Fujimori
发明人： Hideyoshi Horie , Hirotaka Ohta , Toshinari Fujimori
IPC分类号： H01L3300
CPC分类号： H01L33/44 , B82Y20/00 , H01L33/0045 , H01S5/0021 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/16 , H01S5/162 , H01S5/164 , H01S5/3054 , H01S5/3086 , H01S5/34313 , H01S5/34353
摘要： Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.
摘要翻译：即使钝化层扩散，也能够长时间地抑制半导体激光器等半导体发光元件的面的表面状态密度，即使钝化层扩散也能够稳定地工作的化合物半导体发光元件。发光波长为λ（nm）的化合物半导体发光器件，其中在衬底上生长第一导电类型的包层，有源层和第二导电类型的包层，并且两个面彼此相对，从而形成空腔，其特征在于，所述有源层对于小面附近的发射波长是透明的，并且形成所述小面的第一导电类型的包覆层，有源层和第二导电类型的覆盖层的表面各自被涂覆具有钝化层。

2. 发明授权

US06677618B1 Compound semiconductor light emitting device 失效
标题翻译：复合半导体发光器件
公开(公告)号：US06677618B1
公开(公告)日：2004-01-13
申请号：US09453279
申请日：1999-12-03
申请人： Hideyoshi Horie , Hirotaka Ohta , Toshinari Fujimori
发明人： Hideyoshi Horie , Hirotaka Ohta , Toshinari Fujimori
IPC分类号： H01L3300
CPC分类号： H01L33/44 , H01L33/30 , H01S5/0282
摘要： Disclosed compound semiconductor light emitting devices have a substrate, a compound semiconductor layer, formed on the substrate, containing a first conductive type clad layer, an active layer, and a second conductive type clad layer, and a resonator structure formed of two opposing facets of the compound semiconductor layer, wherein surfaces of the first conductive type clad layer, the active layer, and the second conductive type clad layer forming the facet of the compound semiconductor are covered with a passivation layer, wherein at least one element constituting the facet of the compound semiconductor layer is not coupled to oxygen, and wherein a portion of the passivation layer adjacent to the facet of the compound semiconductor layer contains oxygen as a structural element. The compound semiconductor light emitting devices according to the invention can stably suppress, for a long time, the surface state densities on the facets occurring on extrinsic causes, and are high performance devices with establishing both of a high output and a long lifetime.
摘要翻译：公开的化合物半导体发光器件具有形成在基板上的基板，化合物半导体层，其包含第一导电型覆盖层，有源层和第二导电型覆盖层，以及由两个相对的面化合物半导体层，其中形成化合物半导体的面的第一导电型覆盖层，有源层和第二导电型覆盖层的表面被钝化层覆盖，其中至少一个元件构成化合物半导体层不与氧结合，并且其中与化合物半导体层的小面相邻的钝化层的一部分含有氧作为结构元素。根据本发明的化合物半导体发光器件可以长期稳定地抑制在外在原因上产生的面上的表面状态密度，并且是具有高输出和长寿命两者的高性能器件。

3. 发明授权

US06323052B1 Compound semiconductor light emitting device and method of fabricating the same 失效
标题翻译：化合物半导体发光器件及其制造方法
公开(公告)号：US06323052B1
公开(公告)日：2001-11-27
申请号：US09095884
申请日：1998-06-11
申请人： Hideyoshi Horie , Hirotaka Ohta , Toshinari Fujimori
发明人： Hideyoshi Horie , Hirotaka Ohta , Toshinari Fujimori
IPC分类号： H01L2100
CPC分类号： H01L33/44 , B82Y20/00 , H01L33/0045 , H01S5/0021 , H01S5/028 , H01S5/0281 , H01S5/0282 , H01S5/16 , H01S5/162 , H01S5/164 , H01S5/3054 , H01S5/3086 , H01S5/34313 , H01S5/34353
摘要： Compound semiconductor light emitting devices capable of suppressing the surface state density on the facets of semiconductor light emitting devices such as semiconductor lasers for a long time and stable operating even when the passivation layer diffuses can be easily obtained. Compound semiconductor light emitting devices with an emission wavelength of &lgr; (nm) wherein a first conduction type of clad layer, an active layer and a second conduction type of clad layer are grown on a substrate and two facets are opposite to each other so as to form a cavity, characterized in that said active layer is transparent to the emission wavelength in the vicinities of the facets and that the surfaces of the first conduction type of clad layer, active layer and second conduction type of clad layer forming said facets are each coated with a passivation layer.
摘要翻译：即使钝化层扩散，也能够长时间地抑制半导体激光器等半导体发光元件的面的表面状态密度，即使钝化层扩散也能够稳定地工作的化合物半导体发光元件。发光波长为兰姆（nm）的化合物半导体发光器件，其中在衬底上生长第一导电类型的包层，有源层和第二导电类型的包层，并且两个面彼此相对，从而形成空腔，其特征在于，所述有源层对于小面附近的发射波长是透明的，并且形成所述小面的第一导电类型的包覆层，有源层和第二导电类型的覆盖层的表面各自被涂覆具有钝化层。

4. 发明授权

US5352450A Method for preparing vaccine for dental caries and vaccinal compositions for dental caries used as nasal drop 失效
标题翻译：用于龋齿疫苗的方法和用作鼻滴的龋齿的疫苗组合物
公开(公告)号：US5352450A
公开(公告)日：1994-10-04
申请号：US529602
申请日：1990-05-29
申请人： Toshihiko Koga , Nobuo Okahashi , Ichiro Takahashi , Koji Shibuya , Hirotaka Ohta
发明人： Toshihiko Koga , Nobuo Okahashi , Ichiro Takahashi , Koji Shibuya , Hirotaka Ohta
IPC分类号： A61K9/00 , A61K39/00 , C07K14/315 , A61K39/02 , C12P21/06 , C12P21/04
CPC分类号： A61K9/0043 , C07K14/315 , A61K39/00
摘要： A method for preparing a vaccine for dental caries comprises the step of culturing a variant which is obtained by integrating a protein antigen (PAc)-expressing gene into the chromosomal gene of a Streptococcus mutans GS-5 strain to obtain the protein antigen, the protein antigen being produced on the surface of cells of oral Streptococcus mutans or it being extracellularly produced by the microorganism and having a molecular weight ranging from about 170,000 to 220,000. Streptococcus mutans GS-5 (K-3), in which a protein antigen-expressing gene is integrated into the chromosomal gene thereof, has an ability of producing the protein antigen on the surface of the cells or extracellularly. A preventive vaccine composition for dental caries for nasal drops comprises the protein antigen thus produced by the strain: Streptcoccus mutans, the vaccine being intranasally administered. The method makes it possible to enhance the yield of PAc and to simplify processes for purifying PAc. The vaccine composition makes-it possible to internally easily absorb the protein antigen, PAc, in high efficiency and it also makes it possible to effectively increase the antibody titer observed after the administration thereof.
摘要翻译：制备龋齿疫苗的方法包括将通过将表达蛋白质抗原（PAc）的基因整合到变形链球菌GS-5株的染色体基因而获得的变体的方法来获得蛋白质抗原，所述蛋白质抗原在口腔变形链球菌的细胞表面产生，或由微生物细胞外产生，分子量范围为约17万至22万。其中将表达蛋白质抗原的基因整合到其染色体基因中的变形链球菌GS-5（K-3）具有在细胞表面或细胞外产生蛋白质抗原的能力。用于鼻滴龋齿的预防性疫苗组合物包含由菌株：由变形链球菌产生的蛋白质抗原，该疫苗被鼻内给药。该方法可以提高PAc的产率并简化PAc的纯化过程。疫苗组合物能够高效地内部容易地吸收蛋白质抗原PAc，并且还可以有效地增加施用后观察到的抗体滴度。

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