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    • 5. 发明申请
    • Test Device and Test Method for Semiconductor Device
    • 半导体器件的测试器件和测试方法
    • US20090278562A1
    • 2009-11-12
    • US12436986
    • 2009-05-07
    • Hiroshi Zaitsu
    • Hiroshi Zaitsu
    • G01R31/26
    • G01R31/31924G01R31/31932
    • The objective of this invention is to provide a test device that can perform a variety of function tests with a relatively simple constitution. The test device is for testing semiconductor device 1, which contains input terminal IN, output terminal OUT and control terminal CTRL, and whose output terminal is in the high-impedance state corresponding to the control signal applied to control terminal CTRL. The test device comprises test signal supply circuit 20, comparator 30 that compares the output signal from the output terminal with a reference voltage, reference voltage setting part 40 that sets the reference voltage to the voltage on the high-level side or on the low-level side, and load voltage supply circuit 50 that applies the load voltage to the output signal when the control signal is input. Said load voltage supply circuit 50 applies a load voltage greater than the voltage on the high-level side when the reference voltage is set to the high-level side, and it applies a load voltage less than the voltage on the low-level side when the reference voltage is set to the low-level side.
    • 本发明的目的是提供一种能够以相对简单的结构执行各种功能测试的测试装置。 该测试装置用于测试包含输入端子IN,输出端子OUT和控制端子CTRL的半导体器件1,并且其输出端子处于与施加到控制端子CTRL的控制信号相对应的高阻抗状态。 测试装置包括测试信号供给电路20,将输出端子的输出信号与参考电压进行比较的比较器30,将参考电压设定为高电平侧或低电平侧的电压的基准电压设定部40, 电平侧和负载电压供给电路50,其在输入控制信号时将负载电压施加到输出信号。 当基准电压被设定为高电平侧时,所述负载电压供给电路50施加大于高电平侧的电压的负载电压,并且在低电平侧施加小于低电平侧的电压的负载电压, 参考电压设置为低电平侧。